Journal ArticleDOI
Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays
Steven P. DenBaars,Daniel F. Feezell,Katheryn Kelchner,Siddha Pimputkar,Chi Chen Pan,Chia Chen Yen,Shinichi Tanaka,Yuji Zhao,Nathan Pfaff,Robert M. Farrell,Michael Iza,Stacia Keller,Umesh K. Mishra,James S. Speck,Shuji Nakamura +14 more
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TLDR
In this article, a review of the unique polarization anisotropy in gallium nitride (GaN) is included for the different crystal orientations, highlighting high power violet and blue emitters, and the effects of indium incorporation and well width.About:
This article is published in Acta Materialia.The article was published on 2013-02-01. It has received 346 citations till now. The article focuses on the topics: Light extraction in LEDs & Solid-state lighting.read more
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Electronic and excitonic properties of ultrathin (In,Ga)N layers: the role of alloy and monolayer width fluctuations.
TL;DR: In this article, an atomistic analysis of the electronic and excitonic properties of ultrathin, monolayer thick wurtzite (In,Ga)N embedded in GaN is presented.
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Review of GaN/ZnO Hybrid Structures Based Materials and Devices
TL;DR: A review of recent advances of Gallium Nitride (GaN) and Zinc Oxide (ZnO) based hybrid structures materials and devices is presented in this paper.
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Core–shell GaN–ZnO moth-eye nanostructure arrays grown on a-SiO2/Si (1 1 1) as a basis for improved InGaN-based photovoltaics and LEDs
D. J. Rogers,V. E. Sandana,Simon Gautier,Tarik Moudakir,M. Abid,Abdallah Ougazzaden,F. Hosseini Teherani,Philippe Bove,Michael Molinari,Michel Troyon,Marco Peres,M.J. Soares,A.J. Neves,Teresa Monteiro,Damien McGrouther,J. N. Chapman,H.-J. Drouhin,R. McClintock,Manijeh Razeghi +18 more
TL;DR: In this paper, a self-forming, vertically aligned, ZnO moth-eye-like nanoarrays were grown by catalyst-free pulsed laser deposition on a-SiO2/Si (1.1) substrates.
Journal ArticleDOI
Gallium nitride thin films by microwave plasma-assisted ALD
F. Romo-García,H. J. Higuera-Valenzuela,D. Cabrera-German,D. Berman-Mendoza,A. Ramos-Carrazco,Oscar E. Contreras,R. García-Gutierrez +6 more
TL;DR: In this paper, the synthesis and characterization of gallium nitride (GaN) thin films via microwave plasma-assisted atomic layer deposition (MPALD) was reported, which were amorphous or nanocrystalline as it was demonstrated by electron microscopy.
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Structure and electronic bandgap tunability of m-plane GaN multilayers.
TL;DR: In this article, the structural and electronic properties of non-polar m-plane gallium nitride (GaN) with different numbers of atomic layers were systematically investigated, and it was found that the monolayer keeps a planar hexagonal structure due to sp2 hybridization, whereas the multilayers are formed by stacking of buckled hexagonal monolayers with unsaturated coordination number at the surface sublayer and bulklike inner layers.
References
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Spontaneous polarization and piezoelectric constants of III-V nitrides
TL;DR: In this paper, the spontaneous polarization, dynamical Born charges, and piezoelectric constants of the III-V nitrides AlN, GaN, and InN are studied ab initio using the Berry-phase approach to polarization in solids.
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Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
Patrick Waltereit,Oliver Brandt,Achim Trampert,Holger T. Grahn,J. Menniger,Manfred Ramsteiner,M. Reiche,Klaus H. Ploog +7 more
TL;DR: It is demonstrated that the epitaxial growth of GaN/(Al,Ga)N on tetragonal LiAlO2 in a non-polar direction allows the fabrication of structures free of electrostatic fields, resulting in an improved quantum efficiency, which is expected to pave the way towards highly efficient white LEDs.
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Auger recombination in InGaN measured by photoluminescence
TL;DR: In this paper, the Auger recombination coefficient in quasi-bulk InxGa1−xN (x∼9%−15%) layers grown on GaN (0001) is measured by a photoluminescence technique.
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High dislocation densities in high efficiency GaN‐based light‐emitting diodes
TL;DR: In this article, the electrical, optical, and structural properties of light emitting diodes (LEDs) fabricated from the III-V nitride material system have been studied.
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Solid phase immiscibility in GaInN
I.H. Ho,Gerald B. Stringfellow +1 more
TL;DR: In this article, the temperature dependence of the binodal and spinodal lines in the Ga1−xInxN system was calculated using a modified valence force field model where the lattice is allowed to relax beyond the first nearest neighbor.