Journal ArticleDOI
Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays
Steven P. DenBaars,Daniel F. Feezell,Katheryn Kelchner,Siddha Pimputkar,Chi Chen Pan,Chia Chen Yen,Shinichi Tanaka,Yuji Zhao,Nathan Pfaff,Robert M. Farrell,Michael Iza,Stacia Keller,Umesh K. Mishra,James S. Speck,Shuji Nakamura +14 more
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TLDR
In this article, a review of the unique polarization anisotropy in gallium nitride (GaN) is included for the different crystal orientations, highlighting high power violet and blue emitters, and the effects of indium incorporation and well width.About:
This article is published in Acta Materialia.The article was published on 2013-02-01. It has received 346 citations till now. The article focuses on the topics: Light extraction in LEDs & Solid-state lighting.read more
Citations
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Effect of Dielectric Distributed Bragg Reflector on Electrical and Optical Properties of GaN-Based Flip-Chip Light-Emitting Diodes.
TL;DR: It is found that the use of via-hole-based n-type contacts can spread injection current uniformly over the entire active emitting region of FCLEDs and paves the way for application of DBR and via- hole-basedn-type contact in high-efficiency FCL EDs.
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Controlling bottom-up rapid growth of single crystalline gallium nitride nanowires on silicon
TL;DR: Single crystalline gallium nitride nanowire growth from Ni and Ni-Au catalysts on silicon using hydride vapor phase epitaxy is reported, where Au acts as a protection from etching during growth enabling the growth of ultra-long nanowires.
Journal ArticleDOI
Eu2+-Activated Phase-Pure Oxonitridosilicate Phosphor in a Ba–Si–O–N System via Facile Silicate-Assisted Routes Designed by First-Principles Thermodynamic Simulation
Young Jun Yun,Jin Kyu Kim,Ji Young Ju,Seul Ki Choi,Woon Ik Park,Ha-Kyun Jung,Yongseon Kim,Sungho Choi +7 more
TL;DR: This study provides useful guidelines for robust synthetic procedures for developing thermally stable rare-earth-ion activated oxonitridosilicate phosphors and an established simulation method that can be effectively applied to other multigas systems.
Journal ArticleDOI
Improvement in efficiency of yellow Light Emitting Diode using InGaN barriers and modified electron injection layer
TL;DR: In this paper, a new structure for yellow LEDs based on InGaN MQW was proposed to increase the efficiency of these LEDs by using k.p theory and a simulation approach has been used to model and simulate MQw yellow LED based on inGaN quantum wells by using K.p simulation results show that the proposed structure provided much better output characteristics than the conventional structure.
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Highly-efficient GaN-based light-emitting diode wafers on La0.3Sr1.7AlTaO6 substrates
TL;DR: The characterizations have revealed that the full-width at half-maximums for X-ray rocking curves of GaN (0002) and GaN(10-12) are 190.1 and 210.2 arcsec, indicating that high crystalline quality GaN films have been obtained.
References
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Journal ArticleDOI
Spontaneous polarization and piezoelectric constants of III-V nitrides
TL;DR: In this paper, the spontaneous polarization, dynamical Born charges, and piezoelectric constants of the III-V nitrides AlN, GaN, and InN are studied ab initio using the Berry-phase approach to polarization in solids.
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Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
Patrick Waltereit,Oliver Brandt,Achim Trampert,Holger T. Grahn,J. Menniger,Manfred Ramsteiner,M. Reiche,Klaus H. Ploog +7 more
TL;DR: It is demonstrated that the epitaxial growth of GaN/(Al,Ga)N on tetragonal LiAlO2 in a non-polar direction allows the fabrication of structures free of electrostatic fields, resulting in an improved quantum efficiency, which is expected to pave the way towards highly efficient white LEDs.
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Auger recombination in InGaN measured by photoluminescence
TL;DR: In this paper, the Auger recombination coefficient in quasi-bulk InxGa1−xN (x∼9%−15%) layers grown on GaN (0001) is measured by a photoluminescence technique.
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High dislocation densities in high efficiency GaN‐based light‐emitting diodes
TL;DR: In this article, the electrical, optical, and structural properties of light emitting diodes (LEDs) fabricated from the III-V nitride material system have been studied.
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Solid phase immiscibility in GaInN
I.H. Ho,Gerald B. Stringfellow +1 more
TL;DR: In this article, the temperature dependence of the binodal and spinodal lines in the Ga1−xInxN system was calculated using a modified valence force field model where the lattice is allowed to relax beyond the first nearest neighbor.