Journal ArticleDOI
Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays
Steven P. DenBaars,Daniel F. Feezell,Katheryn Kelchner,Siddha Pimputkar,Chi Chen Pan,Chia Chen Yen,Shinichi Tanaka,Yuji Zhao,Nathan Pfaff,Robert M. Farrell,Michael Iza,Stacia Keller,Umesh K. Mishra,James S. Speck,Shuji Nakamura +14 more
TLDR
In this article, a review of the unique polarization anisotropy in gallium nitride (GaN) is included for the different crystal orientations, highlighting high power violet and blue emitters, and the effects of indium incorporation and well width.About:
This article is published in Acta Materialia.The article was published on 2013-02-01. It has received 346 citations till now. The article focuses on the topics: Light extraction in LEDs & Solid-state lighting.read more
Citations
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Journal ArticleDOI
GaN-based light-emitting diodes on various substrates: a critical review.
TL;DR: This review focuses on state-of-the-art high-performance GaN-based LED materials and devices on unconventional substrates, and speculation on the prospects for LEDs on unconventional substrate is speculated.
Journal ArticleDOI
Color Conversion Materials for High-Brightness Laser-Driven Solid-State Lighting
Journal ArticleDOI
Application of Light-Emitting Diodes in Food Production, Postharvest Preservation, and Microbiological Food Safety
TL;DR: A review of the technology of LEDs and their role in food production, postharvest preservation, and in microbiological safety is provided in this paper, where several challenges and limitations are identified for further investigation.
Journal ArticleDOI
Combinatorial insights into doping control and transport properties of zinc tin nitride
Angela N. Fioretti,Angela N. Fioretti,Andriy Zakutayev,Helio Moutinho,Celeste L. Melamed,John D. Perkins,Andrew G. Norman,Mowafak Al-Jassim,Eric S. Toberer,Eric S. Toberer,Adele C. Tamboli,Adele C. Tamboli +11 more
TL;DR: In this article, a combinatorial RF co-sputtering approach was used to identify an optimal set of deposition parameters for obtaining as-deposited films with wurtzite crystal structure and carrier density as low as 1.8 × 1018 cm−3.
Journal ArticleDOI
Behavior of molecules and molecular ions near a field emitter
Baptiste Gault,Baptiste Gault,David W. Saxey,Michael Ashton,Susan B. Sinnott,Ann N. Chiaramonti,Michael P. Moody,Daniel K. Schreiber +7 more
TL;DR: In this article, a careful review of the literature is combined with the development of new methods to treat experimental APT data, the modelling of ion trajectories, and the application of density functional theory (DFT) simulations to derive molecular ion energetics.
References
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Journal ArticleDOI
Low Threshold Current Density InGaN Based 520?530 nm Green Laser Diodes on Semi-Polar {2021} Free-Standing GaN Substrates
Masahiro Adachi,Yusuke Yoshizumi,Yohei Enya,Takashi Kyono,Takamichi Sumitomo,Shinji Tokuyama,Shinpei Takagi,Kazuhide Sumiyoshi,Nobuhiro Saga,Takatoshi Ikegami,Masaki Ueno,Koji Katayama,Takao Nakamura +12 more
TL;DR: In this paper, the threshold current of a typical green laser diodes at 525.5 nm under room temperature cw operation is 51.1 mA, which corresponds to a threshold current density of 4.3 kA/cm2.
Journal ArticleDOI
Compositional dependence of phase separation in InGaN layers
M. Rao,D. Kim,Subhash Mahajan +2 more
TL;DR: In this article, phase separation in InGaN layers grown by metalorganic chemical vapor deposition on GaN epilayers was investigated using transmission electron microscopy, where layer thicknesses of 220 and 660nm were deposited with InN fractions ranging from 3% to 34%.
Journal ArticleDOI
Successful fabrication of white light emitting diodes by using extremely high external quantum efficiency blue chips
TL;DR: In this article, three types of high luminous efficiency white light emitting diodes (LEDs) were fabricated from the high power blue LED with high ϕe of 651 mW at 350 mA.
Journal ArticleDOI
High-Efficiency Blue and True-Green-Emitting Laser Diodes Based on Non-c-Plane Oriented GaN Substrates
James W. Raring,Mathew C. Schmidt,Christiane Poblenz,Yu-Chia Chang,Mark J. Mondry,Ben Li,Justin Iveland,Brianna Walters,Michael R. Krames,Richard Craig,Paul Rudy,James S. Speck,Steven P. DenBaars,Shuji Nakamura +13 more
TL;DR: Using non-c-plane bulk GaN substrates, the authors demonstrate continuous-wave singlemode blue-emitting laser diodes operating with over 23% wall plug efficiency and over 750 mW output power, which represent the highest values reported to date.
Journal ArticleDOI
Study of nonpolar m-plane InGaN∕GaN multiquantum well light emitting diodes grown by homoepitaxial metal-organic chemical vapor deposition
Kwang-Choong Kim,Mathew C. Schmidt,Hitoshi Sato,Feng Wu,Natalie N. Fellows,Zhongyuan Jia,Makoto Saito,Shuji Nakamura,Steven P. DenBaars,James S. Speck,Kenji Fujito +10 more
TL;DR: In this article, a systematic set of near blue-ultraviolet LEDs using different well widths, barrier widths and QW periods were packaged and tested to optimize the quantum well (QW) structure.