Journal ArticleDOI
Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays
Steven P. DenBaars,Daniel F. Feezell,Katheryn Kelchner,Siddha Pimputkar,Chi Chen Pan,Chia Chen Yen,Shinichi Tanaka,Yuji Zhao,Nathan Pfaff,Robert M. Farrell,Michael Iza,Stacia Keller,Umesh K. Mishra,James S. Speck,Shuji Nakamura +14 more
TLDR
In this article, a review of the unique polarization anisotropy in gallium nitride (GaN) is included for the different crystal orientations, highlighting high power violet and blue emitters, and the effects of indium incorporation and well width.About:
This article is published in Acta Materialia.The article was published on 2013-02-01. It has received 346 citations till now. The article focuses on the topics: Light extraction in LEDs & Solid-state lighting.read more
Citations
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Journal ArticleDOI
Behavior of molecules and molecular ions near a field emitter
Baptiste Gault,Baptiste Gault,David W. Saxey,Michael Ashton,Susan B. Sinnott,Ann N. Chiaramonti,Michael P. Moody,Daniel K. Schreiber +7 more
TL;DR: In this paper, a careful review of the literature is combined with the development of new methods to treat experimental APT data, the modelling of ion trajectories, and the application of density functional theory (DFT) simulations to derive molecular ion energetics.
Journal ArticleDOI
Quantum size effects in GaAs nanodisks fabricated using a combination of the bio-template technique and neutral beam etching.
Yosuke Tamura,Toshiyuki Kaizu,Takayuki Kiba,Makoto Igarashi,Rikako Tsukamoto,Akio Higo,Weiguo Hu,Cedric Thomas,Mohd Erman Fauzi,Takuya Hoshii,Ichiro Yamashita,Yoshitaka Okada,Akihiro Murayama,Seiji Samukawa +13 more
TL;DR: Photoluminescence emission due to carrier recombination between the ground states of GaAs NDs was observed, which showed that the emission energy shift depended on the ND diameters, and quantum level engineering due to both diameter and thickness was verified.
Journal ArticleDOI
Self-consistent growth of single-crystalline (01)β-Ga2O3 nanowires using a flexible GaN seed nanocrystal
Pengyu Song,Pengyu Song,Zhengyuan Wu,Xiyang Shen,Junyong Kang,Zhilai Fang,Zhilai Fang,Tong-Yi Zhang +7 more
TL;DR: In this article, single-crystalline (01)β-Ga2O3 nanowires were grown by using a flexible GaN seed nanocrystal self-organizing around catalytic Pt droplets.
Journal ArticleDOI
Ultraviolet-B band lasers fabricated on highly relaxed thick Al0.55Ga0.45N films grown on various types of AlN wafers
Yuta Kawase,Syunya Ikeda,Yusuke Sakuragi,Shinji Yasue,Sho Iwayama,Motoaki Iwaya,Tetsuya Takeuchi,Satoshi Kamiyama,Isamu Akasaki,Isamu Akasaki,Hideto Miyake +10 more
Journal ArticleDOI
A new system for achieving high-quality nonpolar m-plane GaN-based light-emitting diode wafers
Wenliang Wang,Yunhao Lin,Weijia Yang,Zuolian Liu,Shizhong Zhiou,Huirong Qian,Gao Fangliang,Wen Lei,Guoqiang Li +8 more
TL;DR: In this paper, high-resolution X-ray diffraction measurement reveals that high-quality crystalline nonpolar m-plane GaN films have been achieved on LiGaO2(100) substrates.
References
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Journal ArticleDOI
Spontaneous polarization and piezoelectric constants of III-V nitrides
TL;DR: In this paper, the spontaneous polarization, dynamical Born charges, and piezoelectric constants of the III-V nitrides AlN, GaN, and InN are studied ab initio using the Berry-phase approach to polarization in solids.
Journal ArticleDOI
Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
Patrick Waltereit,Oliver Brandt,Achim Trampert,Holger T. Grahn,J. Menniger,Manfred Ramsteiner,M. Reiche,Klaus H. Ploog +7 more
TL;DR: It is demonstrated that the epitaxial growth of GaN/(Al,Ga)N on tetragonal LiAlO2 in a non-polar direction allows the fabrication of structures free of electrostatic fields, resulting in an improved quantum efficiency, which is expected to pave the way towards highly efficient white LEDs.
Journal ArticleDOI
Auger recombination in InGaN measured by photoluminescence
TL;DR: In this paper, the Auger recombination coefficient in quasi-bulk InxGa1−xN (x∼9%−15%) layers grown on GaN (0001) is measured by a photoluminescence technique.
Journal ArticleDOI
High dislocation densities in high efficiency GaN‐based light‐emitting diodes
TL;DR: In this article, the electrical, optical, and structural properties of light emitting diodes (LEDs) fabricated from the III-V nitride material system have been studied.
Journal ArticleDOI
Solid phase immiscibility in GaInN
I.H. Ho,Gerald B. Stringfellow +1 more
TL;DR: In this article, the temperature dependence of the binodal and spinodal lines in the Ga1−xInxN system was calculated using a modified valence force field model where the lattice is allowed to relax beyond the first nearest neighbor.