Journal ArticleDOI
Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays
Steven P. DenBaars,Daniel F. Feezell,Katheryn Kelchner,Siddha Pimputkar,Chi Chen Pan,Chia Chen Yen,Shinichi Tanaka,Yuji Zhao,Nathan Pfaff,Robert M. Farrell,Michael Iza,Stacia Keller,Umesh K. Mishra,James S. Speck,Shuji Nakamura +14 more
TLDR
In this article, a review of the unique polarization anisotropy in gallium nitride (GaN) is included for the different crystal orientations, highlighting high power violet and blue emitters, and the effects of indium incorporation and well width.About:
This article is published in Acta Materialia.The article was published on 2013-02-01. It has received 346 citations till now. The article focuses on the topics: Light extraction in LEDs & Solid-state lighting.read more
Citations
More filters
Journal ArticleDOI
Experimental observation of electroluminescence enhancement on green LEDs mediated by surface plasmons.
TL;DR: The 1.5-fold enhancement of the electroluminescence (EL) of surface-plasmon (SP)-mediated green LEDs suggests that SP-LEDs can be a possible solution to efficiency droop, which is one of the main problems in developing high-power LEDs.
Journal ArticleDOI
Bottom tunnel junction blue light-emitting field-effect transistors
Shyam Bharadwaj,Kevin Lee,Kazuki Nomoto,Austin Hickman,Len van Deurzen,Vladimir Protasenko,Huili Grace Xing,Debdeep Jena +7 more
TL;DR: In this article, a method for achieving voltage-controlled gate-modulated light emission using monolithic integration of fin-and nanowire-n-i-n vertical FETs with bottom-tunnel junction planar blue InGaN LEDs is presented.
Dissertation
Position-controlled selective area growth of Ga-polar GaN nanocolumns by molecular beam epitaxy
TL;DR: In this article, the authors focus on the position-controlled selective area growth of Ga-polar GaN nanocolumns by molecular beam epitaxy and present results on the structural and optical properties of these columns.
Journal ArticleDOI
Local current leakage at threading dislocations in GaN bulk single crystals grown by a modified Na-flux method
TL;DR: In this article, the authors investigated the local electrical and structural properties of threading dislocations in Na-flux-grown GaN bulk single crystals that consist entirely of c-plane growth sectors.
Journal ArticleDOI
Deep traps in InGaN/GaN single quantum well structures grown with and without InGaN underlayers
Alexander Y. Polyakov,Camille Haller,Raphaël Butté,N. B. Smirnov,L. A. Alexanyan,A. I. Kochkova,S.A. Shikoh,Ivan Shchemerov,A. V. Chernykh,P. B. Lagov,P. B. Lagov,Yu. S. Pavlov,J.-F. Carlin,Mauro Mosca,Mauro Mosca,Nicolas Grandjean,Stephen J. Pearton +16 more
TL;DR: In this article, the electrical properties and deep trap spectra were compared for near-UV GaN/InGaN quantum well (QW) structures grown on free-standing GaN substrates.
References
More filters
Journal ArticleDOI
Spontaneous polarization and piezoelectric constants of III-V nitrides
TL;DR: In this paper, the spontaneous polarization, dynamical Born charges, and piezoelectric constants of the III-V nitrides AlN, GaN, and InN are studied ab initio using the Berry-phase approach to polarization in solids.
Journal ArticleDOI
Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
Patrick Waltereit,Oliver Brandt,Achim Trampert,Holger T. Grahn,J. Menniger,Manfred Ramsteiner,M. Reiche,Klaus H. Ploog +7 more
TL;DR: It is demonstrated that the epitaxial growth of GaN/(Al,Ga)N on tetragonal LiAlO2 in a non-polar direction allows the fabrication of structures free of electrostatic fields, resulting in an improved quantum efficiency, which is expected to pave the way towards highly efficient white LEDs.
Journal ArticleDOI
Auger recombination in InGaN measured by photoluminescence
TL;DR: In this paper, the Auger recombination coefficient in quasi-bulk InxGa1−xN (x∼9%−15%) layers grown on GaN (0001) is measured by a photoluminescence technique.
Journal ArticleDOI
High dislocation densities in high efficiency GaN‐based light‐emitting diodes
TL;DR: In this article, the electrical, optical, and structural properties of light emitting diodes (LEDs) fabricated from the III-V nitride material system have been studied.
Journal ArticleDOI
Solid phase immiscibility in GaInN
I.H. Ho,Gerald B. Stringfellow +1 more
TL;DR: In this article, the temperature dependence of the binodal and spinodal lines in the Ga1−xInxN system was calculated using a modified valence force field model where the lattice is allowed to relax beyond the first nearest neighbor.