Journal ArticleDOI
Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays
Steven P. DenBaars,Daniel F. Feezell,Katheryn Kelchner,Siddha Pimputkar,Chi Chen Pan,Chia Chen Yen,Shinichi Tanaka,Yuji Zhao,Nathan Pfaff,Robert M. Farrell,Michael Iza,Stacia Keller,Umesh K. Mishra,James S. Speck,Shuji Nakamura +14 more
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TLDR
In this article, a review of the unique polarization anisotropy in gallium nitride (GaN) is included for the different crystal orientations, highlighting high power violet and blue emitters, and the effects of indium incorporation and well width.About:
This article is published in Acta Materialia.The article was published on 2013-02-01. It has received 346 citations till now. The article focuses on the topics: Light extraction in LEDs & Solid-state lighting.read more
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Coherent X-ray spectroscopy reveals the persistence of island arrangements during layer-by-layer growth
Guangxu Ju,Guangxu Ju,Dongwei Xu,Dongwei Xu,Matthew J. Highland,Carol Thompson,Hua Zhou,Jeffrey A. Eastman,Paul H. Fuoss,Paul H. Fuoss,Peter Zapol,Hyunjung Kim,G. Brian Stephenson +12 more
TL;DR: In this article, X-ray photon correlation spectroscopy (XPCS) measurements of two-dimensional island dynamics during homoepitaxial growth in the layer-by-layer mode are presented.
Journal ArticleDOI
Spectral Optimization of Three-Primary LEDs by Considering the Circadian Action Factor
TL;DR: In this paper, an approach by adjusting electrical currents of three-primary light-emitting diodes (RGB-LEDs) to tune the CAF and color coordinates to be close to those of the standard light with various correlated color temperature (CCT) (2700 K-6500 K) has been reported.
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Deposition of nonpolar m-plane InGaN/GaN multiple quantum wells on LiGaO2(100) substrates
Weijia Yang,Wenliang Wang,Yunhao Lin,Zuolian Liu,Shizhong Zhou,Huirong Qian,Fangliang Gao,Shuguang Zhang,Guoqiang Li +8 more
TL;DR: In this article, high-quality nonpolar m-plane InGaN/GaN multiple quantum wells (MQWs) have been deposited on LiGaO2(100) substrates by the combination of pulsed laser deposition (PLD) and molecular beam epitaxy (MBE) technologies.
Journal ArticleDOI
Performance enhancement of UV quantum well light emitting diode through structure optimization
Shameem Ahmad,Mohd Adil Raushan,Himanshu Gupta,Sandhya Kattayat,Shalendra Kumar,Saurabh Dalela,P. A. Alvi,Mohd Jawaid Siddiqui +7 more
TL;DR: In this article, an extensive study is carried out via theoretical simulation to determine the electrical and optical characteristics of AlGaN based multi-quantum well near-ultra violet light emitting diodes (MQW-UV-LED) for the emission wavelength of 353nm.
Journal ArticleDOI
The microstructure of non-polar a-plane (11 2 ̄ 0) InGaN quantum wells
James T. Griffiths,Fabrice Oehler,Fengzai Tang,Siyuan Zhang,Wai Yuen Fu,Tongtong Zhu,Scott D. Findlay,Changlin Zheng,Joanne Etheridge,Tomas L. Martin,Paul A. J. Bagot,Micheal P. Moody,D. Sutherland,Philip Dawson,Menno J. Kappers,Colin J. Humphreys,Rachel A. Oliver +16 more
TL;DR: In this article, the average quantum well composition measured by atom probe tomography and quantitative scanning transmission electron microscopy quantitatively agrees with measurements by X-ray diffraction, and an inhomogeneous indium distribution is observed by frequency distribution analysis of the atom-probe tomography measurements.
References
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Journal ArticleDOI
Spontaneous polarization and piezoelectric constants of III-V nitrides
TL;DR: In this paper, the spontaneous polarization, dynamical Born charges, and piezoelectric constants of the III-V nitrides AlN, GaN, and InN are studied ab initio using the Berry-phase approach to polarization in solids.
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Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
Patrick Waltereit,Oliver Brandt,Achim Trampert,Holger T. Grahn,J. Menniger,Manfred Ramsteiner,M. Reiche,Klaus H. Ploog +7 more
TL;DR: It is demonstrated that the epitaxial growth of GaN/(Al,Ga)N on tetragonal LiAlO2 in a non-polar direction allows the fabrication of structures free of electrostatic fields, resulting in an improved quantum efficiency, which is expected to pave the way towards highly efficient white LEDs.
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Auger recombination in InGaN measured by photoluminescence
TL;DR: In this paper, the Auger recombination coefficient in quasi-bulk InxGa1−xN (x∼9%−15%) layers grown on GaN (0001) is measured by a photoluminescence technique.
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High dislocation densities in high efficiency GaN‐based light‐emitting diodes
TL;DR: In this article, the electrical, optical, and structural properties of light emitting diodes (LEDs) fabricated from the III-V nitride material system have been studied.
Journal ArticleDOI
Solid phase immiscibility in GaInN
I.H. Ho,Gerald B. Stringfellow +1 more
TL;DR: In this article, the temperature dependence of the binodal and spinodal lines in the Ga1−xInxN system was calculated using a modified valence force field model where the lattice is allowed to relax beyond the first nearest neighbor.