Journal ArticleDOI
Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays
Steven P. DenBaars,Daniel F. Feezell,Katheryn Kelchner,Siddha Pimputkar,Chi Chen Pan,Chia Chen Yen,Shinichi Tanaka,Yuji Zhao,Nathan Pfaff,Robert M. Farrell,Michael Iza,Stacia Keller,Umesh K. Mishra,James S. Speck,Shuji Nakamura +14 more
TLDR
In this article, a review of the unique polarization anisotropy in gallium nitride (GaN) is included for the different crystal orientations, highlighting high power violet and blue emitters, and the effects of indium incorporation and well width.About:
This article is published in Acta Materialia.The article was published on 2013-02-01. It has received 346 citations till now. The article focuses on the topics: Light extraction in LEDs & Solid-state lighting.read more
Citations
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Journal ArticleDOI
Enhanced injection efficiency and light output in bottom tunnel-junction light-emitting diodes
Shyam Bharadwaj,Jeffrey P. Miller,Kevin Lee,Joshua Lederman,Marcin Siekacz,Huili Grace Xing,Debdeep Jena,Czeslaw Skierbiszewski,Henryk Turski +8 more
TL;DR: In this article, the authors investigated the root causes behind the enhanced injection efficiency by employing mature laser diode structures with optimized heterojunction GaN/In0.17Ga0.83N/GaN TJs and UID GaN spacers to separate the optical mode from the heavily doped absorbing p-cladding regions.
Journal ArticleDOI
Ammonothermal Synthesis, Optical Properties, and DFT Calculations of Mg2PN3 and Zn2PN3
TL;DR: This is the first single-crystal X-ray study of ternary nitrides synthesized by the ammonothermal method and reveals insights into the crystallization behavior of Mg2 PN3.
Journal ArticleDOI
Fabrication of wide-bandgap transparent electrodes by using conductive filaments: Performance breakthrough in vertical-type GaN LED
TL;DR: A novel strategy based on TCEs fabricated using wide-bandgap materials such as SiNx, incorporated beneath the n-type electrode of vertical-type LEDs, and the feasibility of this strategy is introduced, demonstrating the tremendous potential of WB-TCEs for use in high-performance optoelectronic devices.
Journal ArticleDOI
Non-invasive biomedical research and diagnostics enabled by innovative compact lasers
TL;DR: This review will outline the recent status of laser technology applied in the biomedical field, focusing on the various available approaches, particularly utilising compact semiconductor lasers, and the advancement and integration of several complimentary biophotonic techniques into single multimodal devices.
Journal ArticleDOI
Continuous-wave optically pumped green perovskite vertical-cavity surface-emitter.
TL;DR: An optically pumped green perovskite vertical-cavity surface-emitter operating in continuous-wave (CW) with a power density threshold of ∼89 kW/cm2 and an active region of CH3NH3PbBr3 embedded in a dielectric microcavities is reported.
References
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Journal ArticleDOI
Spontaneous polarization and piezoelectric constants of III-V nitrides
TL;DR: In this paper, the spontaneous polarization, dynamical Born charges, and piezoelectric constants of the III-V nitrides AlN, GaN, and InN are studied ab initio using the Berry-phase approach to polarization in solids.
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Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
Patrick Waltereit,Oliver Brandt,Achim Trampert,Holger T. Grahn,J. Menniger,Manfred Ramsteiner,M. Reiche,Klaus H. Ploog +7 more
TL;DR: It is demonstrated that the epitaxial growth of GaN/(Al,Ga)N on tetragonal LiAlO2 in a non-polar direction allows the fabrication of structures free of electrostatic fields, resulting in an improved quantum efficiency, which is expected to pave the way towards highly efficient white LEDs.
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Auger recombination in InGaN measured by photoluminescence
TL;DR: In this paper, the Auger recombination coefficient in quasi-bulk InxGa1−xN (x∼9%−15%) layers grown on GaN (0001) is measured by a photoluminescence technique.
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High dislocation densities in high efficiency GaN‐based light‐emitting diodes
TL;DR: In this article, the electrical, optical, and structural properties of light emitting diodes (LEDs) fabricated from the III-V nitride material system have been studied.
Journal ArticleDOI
Solid phase immiscibility in GaInN
I.H. Ho,Gerald B. Stringfellow +1 more
TL;DR: In this article, the temperature dependence of the binodal and spinodal lines in the Ga1−xInxN system was calculated using a modified valence force field model where the lattice is allowed to relax beyond the first nearest neighbor.