Journal ArticleDOI
Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays
Steven P. DenBaars,Daniel F. Feezell,Katheryn Kelchner,Siddha Pimputkar,Chi Chen Pan,Chia Chen Yen,Shinichi Tanaka,Yuji Zhao,Nathan Pfaff,Robert M. Farrell,Michael Iza,Stacia Keller,Umesh K. Mishra,James S. Speck,Shuji Nakamura +14 more
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TLDR
In this article, a review of the unique polarization anisotropy in gallium nitride (GaN) is included for the different crystal orientations, highlighting high power violet and blue emitters, and the effects of indium incorporation and well width.About:
This article is published in Acta Materialia.The article was published on 2013-02-01. It has received 346 citations till now. The article focuses on the topics: Light extraction in LEDs & Solid-state lighting.read more
Citations
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Temperature variable luminescence and color tuning of Eu2+/Mn2+-codoped strontium magnesium phosphates as promising red-emitting phosphors for light emitting diodes
TL;DR: Bright and stable reddish color illuminated light emitting diodes (LEDs) can be obtained by combining the proposed phosphates with ultraviolet LEDs, demonstrating the potential red-emitting phosphors for ultraviolet-pumped phosphor converted white-LEDs.
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Sol-gel derived barium orthovanadate phosphors for white light-emitting diodes
TL;DR: The self-luminescent Ba3(VO4)2 materials were synthesized by a sol-gel method and the structural and morphological properties of the prepared materials were analyzed by X-ray diffraction (XRD) pattern and scanning electron microscope images as discussed by the authors.
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An explanation for catastrophic failures of GaN-based vertical structure LEDs subjected to thermoelectric stressing
TL;DR: In this article, a phenomenological relationship is given to describe the interactions between temperatures and applied electric currents on the diffusion-flux-accommodated sliding and deformation of patterned metal electrodes on vertical LEDs.
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Ammonothermal Synthesis and Crystal Structure of the Nitridoalumogermanate Ca1–xLixAl1–xGe1+xN3 (x ≈ 0.2)
TL;DR: In this article, a nitridoalumogermanate Ca1-xLixAl 1-xGe 1+xN3 (x approximate to 0.2) was synthesized from supercritical ammonia at 925 K and 185 MPa starting from the intermetallic precursor Ca3Al2Ge2 and Li as mineralizer.
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Nano-porous GaN cladding and scattering loss in edge emitting laser diodes
TL;DR: In this paper , the authors reported continuous wave operation of electrically injected InGaN laser diodes using nano-porous GaN n-side cladding with 33% porosity.
References
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Spontaneous polarization and piezoelectric constants of III-V nitrides
TL;DR: In this paper, the spontaneous polarization, dynamical Born charges, and piezoelectric constants of the III-V nitrides AlN, GaN, and InN are studied ab initio using the Berry-phase approach to polarization in solids.
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Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
Patrick Waltereit,Oliver Brandt,Achim Trampert,Holger T. Grahn,J. Menniger,Manfred Ramsteiner,M. Reiche,Klaus H. Ploog +7 more
TL;DR: It is demonstrated that the epitaxial growth of GaN/(Al,Ga)N on tetragonal LiAlO2 in a non-polar direction allows the fabrication of structures free of electrostatic fields, resulting in an improved quantum efficiency, which is expected to pave the way towards highly efficient white LEDs.
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Auger recombination in InGaN measured by photoluminescence
TL;DR: In this paper, the Auger recombination coefficient in quasi-bulk InxGa1−xN (x∼9%−15%) layers grown on GaN (0001) is measured by a photoluminescence technique.
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High dislocation densities in high efficiency GaN‐based light‐emitting diodes
TL;DR: In this article, the electrical, optical, and structural properties of light emitting diodes (LEDs) fabricated from the III-V nitride material system have been studied.
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Solid phase immiscibility in GaInN
I.H. Ho,Gerald B. Stringfellow +1 more
TL;DR: In this article, the temperature dependence of the binodal and spinodal lines in the Ga1−xInxN system was calculated using a modified valence force field model where the lattice is allowed to relax beyond the first nearest neighbor.