Journal ArticleDOI
Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays
Steven P. DenBaars,Daniel F. Feezell,Katheryn Kelchner,Siddha Pimputkar,Chi Chen Pan,Chia Chen Yen,Shinichi Tanaka,Yuji Zhao,Nathan Pfaff,Robert M. Farrell,Michael Iza,Stacia Keller,Umesh K. Mishra,James S. Speck,Shuji Nakamura +14 more
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TLDR
In this article, a review of the unique polarization anisotropy in gallium nitride (GaN) is included for the different crystal orientations, highlighting high power violet and blue emitters, and the effects of indium incorporation and well width.About:
This article is published in Acta Materialia.The article was published on 2013-02-01. It has received 346 citations till now. The article focuses on the topics: Light extraction in LEDs & Solid-state lighting.read more
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Color‐Tunable 3D InGaN/GaN Multi‐Quantum‐Well Light‐Emitting‐Diode Based on Microfacet Emission and Programmable Driving Power Supply
Lai Wang,Xun Wang,Frank Bertram,Bowen Sheng,Zhibiao Hao,Yi Luo,Changzheng Sun,Bing Xiong,Yanjun Han,Jian Wang,Hongtao Li,Gordon Schmidt,Peter Veit,Jürgen Christen,Xinqiang Wang +14 more
Journal ArticleDOI
A Bipolar-Pulse Voltage Method for Junction Temperature Measurement of Alternating Current Light-Emitting Diodes
Honghui Zhu,Yijun Lu,Tingzhu Wu,Ziquan Guo,Lihong Zhu,Xiao Jingjing,Yi Tu,Yulin Gao,Yue Lin,Zhong Chen +9 more
TL;DR: In this paper, a new method for measuring the junction temperature of alternating current light-emitting diodes was proposed, which employs a periodic bipolar voltage pulse signal as the input, and utilizes the amplitude of corresponding output current as the temperature sensitive parameter.
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Systematic study of shockley-read-hall and radiative recombination in GaN on Al2O3, freestanding GaN, and GaN on Si
TL;DR: In this article, structural, electrical, and optical properties of three GaN samples were studied and correlated by x-ray diffraction, secondary mass ion spectroscopy, and Hall effect studies, respectively.
Journal ArticleDOI
Solid Solutions of Grimm-Sommerfeld Analogous Nitride Semiconductors II-IV-N2 (II=Mg, Mn, Zn; IV=Si, Ge): Ammonothermal Synthesis and DFT Calculations.
Mathias Mallmann,Robin Niklaus,Tobias Rackl,Maximilian Benz,Thanh Chau,Dirk Johrendt,Jan Minár,Wolfgang Schnick +7 more
TL;DR: The ammonothermal synthesis of solid solutions of II‐IV‐N2 compounds has demonstrated bandgap tunability between the respective boundary phases and was corroborated by DFT calculations of the electronic structure of pseudorelaxed mixed‐occupancy structures by using the KKR+CPA approach.
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Influence of implanted Mg concentration on defects and Mg distribution in GaN
Ashutosh Kumar,Wei Yi,Jun Uzuhashi,Tadakatsu Ohkubo,Jun Chen,Takashi Sekiguchi,Ryo Tanaka,Shinya Takashima,Masaharu Edo,Kazuhiro Hono +9 more
TL;DR: In this paper, the authors conducted correlative scanning transmission electron microscopy, atom probe tomography, and cathodoluminescence (CL) measurements on Mg-implanted gallium nitride (GaN) layers with the implanted concentration ranging from 1
References
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Journal ArticleDOI
Spontaneous polarization and piezoelectric constants of III-V nitrides
TL;DR: In this paper, the spontaneous polarization, dynamical Born charges, and piezoelectric constants of the III-V nitrides AlN, GaN, and InN are studied ab initio using the Berry-phase approach to polarization in solids.
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Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
Patrick Waltereit,Oliver Brandt,Achim Trampert,Holger T. Grahn,J. Menniger,Manfred Ramsteiner,M. Reiche,Klaus H. Ploog +7 more
TL;DR: It is demonstrated that the epitaxial growth of GaN/(Al,Ga)N on tetragonal LiAlO2 in a non-polar direction allows the fabrication of structures free of electrostatic fields, resulting in an improved quantum efficiency, which is expected to pave the way towards highly efficient white LEDs.
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Auger recombination in InGaN measured by photoluminescence
TL;DR: In this paper, the Auger recombination coefficient in quasi-bulk InxGa1−xN (x∼9%−15%) layers grown on GaN (0001) is measured by a photoluminescence technique.
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High dislocation densities in high efficiency GaN‐based light‐emitting diodes
TL;DR: In this article, the electrical, optical, and structural properties of light emitting diodes (LEDs) fabricated from the III-V nitride material system have been studied.
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Solid phase immiscibility in GaInN
I.H. Ho,Gerald B. Stringfellow +1 more
TL;DR: In this article, the temperature dependence of the binodal and spinodal lines in the Ga1−xInxN system was calculated using a modified valence force field model where the lattice is allowed to relax beyond the first nearest neighbor.