Journal ArticleDOI
Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays
Steven P. DenBaars,Daniel F. Feezell,Katheryn Kelchner,Siddha Pimputkar,Chi Chen Pan,Chia Chen Yen,Shinichi Tanaka,Yuji Zhao,Nathan Pfaff,Robert M. Farrell,Michael Iza,Stacia Keller,Umesh K. Mishra,James S. Speck,Shuji Nakamura +14 more
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TLDR
In this article, a review of the unique polarization anisotropy in gallium nitride (GaN) is included for the different crystal orientations, highlighting high power violet and blue emitters, and the effects of indium incorporation and well width.About:
This article is published in Acta Materialia.The article was published on 2013-02-01. It has received 346 citations till now. The article focuses on the topics: Light extraction in LEDs & Solid-state lighting.read more
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Book ChapterDOI
Light-Emitting Diodes in Postharvest Quality Preservation and Microbiological Food Safety
TL;DR: In this article, the role of light-emitting diodes (LEDs) in plant growth has been recognized and studied with substantial depth, particularly in the areas of postharvest and microbiological quality.
Journal ArticleDOI
Improving the Extraction Efficiency of Planar GaN-Based Blue Light-Emitting Diodes via Optimizing Indium Tin Oxide Nanodisc Arrays
TL;DR: In this paper, the authors reported an enhancement in light emission of a GaN-based blue light-emitting diode (LED) with periodic indium tin oxide (ITO) nanodisc arrays.
Journal ArticleDOI
Effect of high temperature, high pressure annealing on GaN drift layers for vertical power devices
Travis J. Anderson,James C. Gallagher,James C. Gallagher,Lunet E. Luna,Andrew D. Koehler,Alan G. Jacobs,Alan G. Jacobs,Jinqiao Xie,Karl D. Hobart,Boris N. Feigelson +9 more
TL;DR: In this article, the authors evaluate the effect of the symmetric multicycle rapid thermal annealing (SMRTA) process on both Mg ion implanted and non-implanted thick unintentionally doped GaN drift layers for vertical power devices, and show that the capping/annealing process itself is not detrimental to the crystal, and the annihilation of native point defects in the process has beneficial effects for device structures.
Journal ArticleDOI
Epitaxial growth of nonpolar GaN films on r-plane sapphire substrates by pulsed laser deposition
TL;DR: In this paper, the properties of a single-crystalline nonpolar GaN epitaxial film grown on r-plane sapphire (Al2O3) substrates were investigated.
Journal ArticleDOI
Titanium oxide nanotube arrays for high light extraction efficiency of GaN-based vertical light-emitting diodes
Young-Chul Leem,Okkyun Seo,Yong-Ryun Jo,Joon Heon Kim,Jaeyi Chun,Bong-Joong Kim,Do Young Noh,Wantae Lim,Yong-Il Kim,Seong-Ju Park +9 more
TL;DR: Light propagation along various configurations of TiO2 NTs on the VLEDs was investigated using finite-difference time domain simulations and the results indicated that the wall thickness of the TiO1 NTs should be maintained close to 20 nm for superior light extraction from the V LEDs.
References
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Journal ArticleDOI
Spontaneous polarization and piezoelectric constants of III-V nitrides
TL;DR: In this paper, the spontaneous polarization, dynamical Born charges, and piezoelectric constants of the III-V nitrides AlN, GaN, and InN are studied ab initio using the Berry-phase approach to polarization in solids.
Journal ArticleDOI
Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
Patrick Waltereit,Oliver Brandt,Achim Trampert,Holger T. Grahn,J. Menniger,Manfred Ramsteiner,M. Reiche,Klaus H. Ploog +7 more
TL;DR: It is demonstrated that the epitaxial growth of GaN/(Al,Ga)N on tetragonal LiAlO2 in a non-polar direction allows the fabrication of structures free of electrostatic fields, resulting in an improved quantum efficiency, which is expected to pave the way towards highly efficient white LEDs.
Journal ArticleDOI
Auger recombination in InGaN measured by photoluminescence
TL;DR: In this paper, the Auger recombination coefficient in quasi-bulk InxGa1−xN (x∼9%−15%) layers grown on GaN (0001) is measured by a photoluminescence technique.
Journal ArticleDOI
High dislocation densities in high efficiency GaN‐based light‐emitting diodes
TL;DR: In this article, the electrical, optical, and structural properties of light emitting diodes (LEDs) fabricated from the III-V nitride material system have been studied.
Journal ArticleDOI
Solid phase immiscibility in GaInN
I.H. Ho,Gerald B. Stringfellow +1 more
TL;DR: In this article, the temperature dependence of the binodal and spinodal lines in the Ga1−xInxN system was calculated using a modified valence force field model where the lattice is allowed to relax beyond the first nearest neighbor.