Journal ArticleDOI
Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays
Steven P. DenBaars,Daniel F. Feezell,Katheryn Kelchner,Siddha Pimputkar,Chi Chen Pan,Chia Chen Yen,Shinichi Tanaka,Yuji Zhao,Nathan Pfaff,Robert M. Farrell,Michael Iza,Stacia Keller,Umesh K. Mishra,James S. Speck,Shuji Nakamura +14 more
TLDR
In this article, a review of the unique polarization anisotropy in gallium nitride (GaN) is included for the different crystal orientations, highlighting high power violet and blue emitters, and the effects of indium incorporation and well width.About:
This article is published in Acta Materialia.The article was published on 2013-02-01. It has received 346 citations till now. The article focuses on the topics: Light extraction in LEDs & Solid-state lighting.read more
Citations
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Journal ArticleDOI
GaN-based light-emitting diodes on various substrates: a critical review.
TL;DR: This review focuses on state-of-the-art high-performance GaN-based LED materials and devices on unconventional substrates, and speculation on the prospects for LEDs on unconventional substrate is speculated.
Journal ArticleDOI
Color Conversion Materials for High-Brightness Laser-Driven Solid-State Lighting
Journal ArticleDOI
Application of Light-Emitting Diodes in Food Production, Postharvest Preservation, and Microbiological Food Safety
TL;DR: A review of the technology of LEDs and their role in food production, postharvest preservation, and in microbiological safety is provided in this paper, where several challenges and limitations are identified for further investigation.
Journal ArticleDOI
Combinatorial insights into doping control and transport properties of zinc tin nitride
Angela N. Fioretti,Angela N. Fioretti,Andriy Zakutayev,Helio Moutinho,Celeste L. Melamed,John D. Perkins,Andrew G. Norman,Mowafak Al-Jassim,Eric S. Toberer,Eric S. Toberer,Adele C. Tamboli,Adele C. Tamboli +11 more
TL;DR: In this article, a combinatorial RF co-sputtering approach was used to identify an optimal set of deposition parameters for obtaining as-deposited films with wurtzite crystal structure and carrier density as low as 1.8 × 1018 cm−3.
Journal ArticleDOI
Behavior of molecules and molecular ions near a field emitter
Baptiste Gault,Baptiste Gault,David W. Saxey,Michael Ashton,Susan B. Sinnott,Ann N. Chiaramonti,Michael P. Moody,Daniel K. Schreiber +7 more
TL;DR: In this article, a careful review of the literature is combined with the development of new methods to treat experimental APT data, the modelling of ion trajectories, and the application of density functional theory (DFT) simulations to derive molecular ion energetics.
References
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Journal ArticleDOI
Cone‐shaped surface GaN‐based light‐emitting diodes
Tetsuo Fujii,Aurelien David,Y. Gao,Michael Iza,Steven P. DenBaars,E. L. Hu,Claude Weisbuch,Shuji Nakamura +7 more
TL;DR: In this paper, the laser lift off (LLO) technique combined with photo electrochemical etching (PEC) allowed for the development of a high light extraction structure without any deterioration of the light-emitting diode (LED) surface.
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Comparison of InGaN/GaN light emitting diodes grown on m -plane and a -plane bulk GaN substrates
Hisashi Yamada,Kenji Iso,Makoto Saito,Hirohiko Hirasawa,Natalie N. Fellows,Hisashi Masui,Kenji Fujito,James S. Speck,Steven P. DenBaars,Shuji Nakamura +9 more
TL;DR: In this article, a GaN/GaN-based light emitting diodes (LEDs) grown on m -plane, a -plane and off-axis between m - and a-plane GaN bulk substrates were investigated.
Journal ArticleDOI
Effects of stress on phase separation in InxGa1−xN/GaN multiple quantum-wells
TL;DR: In this paper, high-resolution X-ray diffraction (HRXRD), scanning transmission electron microscopy and photoluminescence (PL) images were investigated by high-angle annular dark-field (HAADF) images.