Journal ArticleDOI
Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays
Steven P. DenBaars,Daniel F. Feezell,Katheryn Kelchner,Siddha Pimputkar,Chi Chen Pan,Chia Chen Yen,Shinichi Tanaka,Yuji Zhao,Nathan Pfaff,Robert M. Farrell,Michael Iza,Stacia Keller,Umesh K. Mishra,James S. Speck,Shuji Nakamura +14 more
TLDR
In this article, a review of the unique polarization anisotropy in gallium nitride (GaN) is included for the different crystal orientations, highlighting high power violet and blue emitters, and the effects of indium incorporation and well width.About:
This article is published in Acta Materialia.The article was published on 2013-02-01. It has received 346 citations till now. The article focuses on the topics: Light extraction in LEDs & Solid-state lighting.read more
Citations
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Journal ArticleDOI
High-efficiency yellow-emitting La3Si6N11:Ce phosphor-in-glass for laser-driven white lighting
Li Xu,Luhan Wang,Shuyang Bao,Yu Wang,Jiangdan Zhang,Yueyuan Liang,Xiaojuan Liang,Qing Chen,Weidong Xiang +8 more
TL;DR: In this paper , a novel nitride phosphor, La3Si6N11:Ce3+ (LSN), exhibits a wider luminescence spectrum and better thermal quenching performance than Y3Al5O12, YAG.
Journal ArticleDOI
Performance of InGaN/GaN Light Emitting Diodes with n-GaN Layer Embedded with SiO2 Nano-Particles
TL;DR: In this paper, the authors demonstrate high performance InGaN/GaN blue light emitting diodes (LEDs) embedded with an air void layer produced by a dry-etch of nano-pillars in an n-GaN layer grown on patterned sapphire substrate (PSS).
Journal ArticleDOI
GaN growth via tri-halide vapor phase epitaxy using solid source of GaCl3: investigation of the growth dependence on NH3 and additional Cl2
Nao Takekawa,Machi Takahashi,Mayuko Kobayashi,Ichiro Kanosue,Hiroyuki Uno,Kikurou Takemoto,Hisashi Murakami +6 more
TL;DR: In this paper, the relationship between gallium precursor molecule and growth polarity was clarified; it was found that a small amount of GaCl3 could be reduced by H2 originating from the decomposition of NH3 to produce GaCl, and additional Cl2 could suppress the reduction process.
Journal ArticleDOI
Investigation on the Properties of Nonpolar m-Plane GaN-Based Light-Emitting Diode Wafers Grown on LiGaO2(100) Substrates
TL;DR: In this paper, high quality nonpolar m-plane GaN-based light-emitting diode (LED) wafers on LiGaO2(100) substrates have been grown by the combination of pulsed laser deposition and molecular beam epitaxy technologies.
Journal ArticleDOI
Green laser diodes with constant temperature growth of InGaN/GaN multiple quantum well active region
Aiqin Tian,Jianping Liu,Jianping Liu,Renlin Zhou,Renlin Zhou,Liqun Zhang,Siyi Huang,Wei Zhou,Masao Ikeda,Shuming Zhang,Shuming Zhang,Deyao Li,Lingrong Jiang,Lingrong Jiang,Hao Lin,Hui Yang,Hui Yang +16 more
TL;DR: In this paper, the authors report methods to suppress the density of trench defects in green InGaN/GaN multiple quantum wells (MQWs), which results in greatly improved optical quality and nonradiative recombination lifetime.
References
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Journal ArticleDOI
Spontaneous polarization and piezoelectric constants of III-V nitrides
TL;DR: In this paper, the spontaneous polarization, dynamical Born charges, and piezoelectric constants of the III-V nitrides AlN, GaN, and InN are studied ab initio using the Berry-phase approach to polarization in solids.
Journal ArticleDOI
Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
Patrick Waltereit,Oliver Brandt,Achim Trampert,Holger T. Grahn,J. Menniger,Manfred Ramsteiner,M. Reiche,Klaus H. Ploog +7 more
TL;DR: It is demonstrated that the epitaxial growth of GaN/(Al,Ga)N on tetragonal LiAlO2 in a non-polar direction allows the fabrication of structures free of electrostatic fields, resulting in an improved quantum efficiency, which is expected to pave the way towards highly efficient white LEDs.
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Auger recombination in InGaN measured by photoluminescence
TL;DR: In this paper, the Auger recombination coefficient in quasi-bulk InxGa1−xN (x∼9%−15%) layers grown on GaN (0001) is measured by a photoluminescence technique.
Journal ArticleDOI
High dislocation densities in high efficiency GaN‐based light‐emitting diodes
TL;DR: In this article, the electrical, optical, and structural properties of light emitting diodes (LEDs) fabricated from the III-V nitride material system have been studied.
Journal ArticleDOI
Solid phase immiscibility in GaInN
I.H. Ho,Gerald B. Stringfellow +1 more
TL;DR: In this article, the temperature dependence of the binodal and spinodal lines in the Ga1−xInxN system was calculated using a modified valence force field model where the lattice is allowed to relax beyond the first nearest neighbor.