Journal ArticleDOI
Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays
Steven P. DenBaars,Daniel F. Feezell,Katheryn Kelchner,Siddha Pimputkar,Chi Chen Pan,Chia Chen Yen,Shinichi Tanaka,Yuji Zhao,Nathan Pfaff,Robert M. Farrell,Michael Iza,Stacia Keller,Umesh K. Mishra,James S. Speck,Shuji Nakamura +14 more
TLDR
In this article, a review of the unique polarization anisotropy in gallium nitride (GaN) is included for the different crystal orientations, highlighting high power violet and blue emitters, and the effects of indium incorporation and well width.About:
This article is published in Acta Materialia.The article was published on 2013-02-01. It has received 346 citations till now. The article focuses on the topics: Light extraction in LEDs & Solid-state lighting.read more
Citations
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Journal ArticleDOI
Phototreatment (below 1100 nm) improving quality attributes of fresh-cut fruits and vegetables: A review.
TL;DR: In this article , a review of relevant literatures to address the potential for phototreatment technology (Red, blue, green, ultraviolet and pulsed light) applied to fresh-cut fruit and vegetable products (FFVP) is presented.
Journal ArticleDOI
Efficient Activation and High Mobility of Ion-Implanted Silicon for Next-Generation GaN Devices
Alan G. Jacobs,Boris N. Feigelson,Joseph A. Spencer,Marko J. Tadjer,Jennifer K. Hite,Karl D. Hobart,Travis J. Anderson +6 more
TL;DR: In this article , the authors reported highly effective silicon ion implant activation in GaN via Symmetrical Multicycle Rapid Thermal Annealing (SMRTA) at peak temperatures of 1450 to 1530 °C, producing a mobility of up to 137 cm2/Vs at 300K with a 57% activation efficiency for a 300 nm thick 1 × 1019 cm−3 box implant profile.
Dissertation
Thermal management and humidity based prognostics of high-power LED packages
TL;DR: In this paper, the effects of current, temperature and humidity on the electrical-optical-thermal (EOT) properties of light-emitting-diodes (LEDs) were investigated.
Journal ArticleDOI
Hardware Evaluation for GaN-Based Single-Phase Five-Level Inverter
TL;DR: In this article , a five-level GaN-based cascaded H-bridge inverter controlled by a Texas Instruments (TI) C2000 microcontroller was used to conduct a hardware-in-the-loop experiment.
Proceedings ArticleDOI
Structural and spectral properties of MgZnO2:Sm3+ phosphor
TL;DR: The powder X-ray diffraction (XRD) analysis confirmed the crystallinity and phase purity of the samarium doped MgZnO2 phosphor was synthesized by the low-cost combustion method as discussed by the authors.
References
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Journal ArticleDOI
Spontaneous polarization and piezoelectric constants of III-V nitrides
TL;DR: In this paper, the spontaneous polarization, dynamical Born charges, and piezoelectric constants of the III-V nitrides AlN, GaN, and InN are studied ab initio using the Berry-phase approach to polarization in solids.
Journal ArticleDOI
Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
Patrick Waltereit,Oliver Brandt,Achim Trampert,Holger T. Grahn,J. Menniger,Manfred Ramsteiner,M. Reiche,Klaus H. Ploog +7 more
TL;DR: It is demonstrated that the epitaxial growth of GaN/(Al,Ga)N on tetragonal LiAlO2 in a non-polar direction allows the fabrication of structures free of electrostatic fields, resulting in an improved quantum efficiency, which is expected to pave the way towards highly efficient white LEDs.
Journal ArticleDOI
Auger recombination in InGaN measured by photoluminescence
TL;DR: In this paper, the Auger recombination coefficient in quasi-bulk InxGa1−xN (x∼9%−15%) layers grown on GaN (0001) is measured by a photoluminescence technique.
Journal ArticleDOI
High dislocation densities in high efficiency GaN‐based light‐emitting diodes
TL;DR: In this article, the electrical, optical, and structural properties of light emitting diodes (LEDs) fabricated from the III-V nitride material system have been studied.
Journal ArticleDOI
Solid phase immiscibility in GaInN
I.H. Ho,Gerald B. Stringfellow +1 more
TL;DR: In this article, the temperature dependence of the binodal and spinodal lines in the Ga1−xInxN system was calculated using a modified valence force field model where the lattice is allowed to relax beyond the first nearest neighbor.