Journal ArticleDOI
Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays
Steven P. DenBaars,Daniel F. Feezell,Katheryn Kelchner,Siddha Pimputkar,Chi Chen Pan,Chia Chen Yen,Shinichi Tanaka,Yuji Zhao,Nathan Pfaff,Robert M. Farrell,Michael Iza,Stacia Keller,Umesh K. Mishra,James S. Speck,Shuji Nakamura +14 more
TLDR
In this article, a review of the unique polarization anisotropy in gallium nitride (GaN) is included for the different crystal orientations, highlighting high power violet and blue emitters, and the effects of indium incorporation and well width.About:
This article is published in Acta Materialia.The article was published on 2013-02-01. It has received 346 citations till now. The article focuses on the topics: Light extraction in LEDs & Solid-state lighting.read more
Citations
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Epitaxial growth of group III-nitride films by pulsed laser deposition and their use in the development of LED devices
TL;DR: In this paper, a review of the epitaxial growth of group III-nitrides on thermally active substrates by pulsed laser deposition and their use in the development of LED devices is presented.
Journal Article
Behavior of molecules and molecular ions near a field emitter
Ann C. Chiaramonti Debay,Baptiste Gault,Michael Ashton,Susan B. Sinnott,Michael P. Moody,David W. Saxey,Daniel K. Schreiber +6 more
Journal ArticleDOI
2 Gbit/s data transmission from an unfiltered laser-based phosphor-converted white lighting communication system.
Changmin Lee,Chao Shen,Hassan M. Oubei,Michael Cantore,Bilal Janjua,Tien Khee Ng,Robert M. Farrell,Munir M. El-Desouki,James S. Speck,Shuji Nakamura,Boon S. Ooi,Steven P. DenBaars +11 more
TL;DR: The demonstrated laser-based lighting system can be used simultaneously for indoor broadband access and illumination applications with good color stability and high data transmission rate.
Journal ArticleDOI
Global substance flow analysis of gallium, germanium, and indium: Quantification of extraction, uses, and dissipative losses within their anthropogenic cycles
TL;DR: A global substance flow analysis for gallium (Ga), germanium (Ge), and indium (In) for 2011, quantifying the amount of metal lost during extraction, beneficiation/smelting/refining, manufacturing of intermediate products, and the amount embodied in end-use products is presented in this article.
References
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Journal ArticleDOI
Spontaneous polarization and piezoelectric constants of III-V nitrides
TL;DR: In this paper, the spontaneous polarization, dynamical Born charges, and piezoelectric constants of the III-V nitrides AlN, GaN, and InN are studied ab initio using the Berry-phase approach to polarization in solids.
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Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
Patrick Waltereit,Oliver Brandt,Achim Trampert,Holger T. Grahn,J. Menniger,Manfred Ramsteiner,M. Reiche,Klaus H. Ploog +7 more
TL;DR: It is demonstrated that the epitaxial growth of GaN/(Al,Ga)N on tetragonal LiAlO2 in a non-polar direction allows the fabrication of structures free of electrostatic fields, resulting in an improved quantum efficiency, which is expected to pave the way towards highly efficient white LEDs.
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Auger recombination in InGaN measured by photoluminescence
TL;DR: In this paper, the Auger recombination coefficient in quasi-bulk InxGa1−xN (x∼9%−15%) layers grown on GaN (0001) is measured by a photoluminescence technique.
Journal ArticleDOI
High dislocation densities in high efficiency GaN‐based light‐emitting diodes
TL;DR: In this article, the electrical, optical, and structural properties of light emitting diodes (LEDs) fabricated from the III-V nitride material system have been studied.
Journal ArticleDOI
Solid phase immiscibility in GaInN
I.H. Ho,Gerald B. Stringfellow +1 more
TL;DR: In this article, the temperature dependence of the binodal and spinodal lines in the Ga1−xInxN system was calculated using a modified valence force field model where the lattice is allowed to relax beyond the first nearest neighbor.