Journal ArticleDOI
Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays
Steven P. DenBaars,Daniel F. Feezell,Katheryn Kelchner,Siddha Pimputkar,Chi Chen Pan,Chia Chen Yen,Shinichi Tanaka,Yuji Zhao,Nathan Pfaff,Robert M. Farrell,Michael Iza,Stacia Keller,Umesh K. Mishra,James S. Speck,Shuji Nakamura +14 more
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TLDR
In this article, a review of the unique polarization anisotropy in gallium nitride (GaN) is included for the different crystal orientations, highlighting high power violet and blue emitters, and the effects of indium incorporation and well width.About:
This article is published in Acta Materialia.The article was published on 2013-02-01. It has received 346 citations till now. The article focuses on the topics: Light extraction in LEDs & Solid-state lighting.read more
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Sulfurization Study on the Ag and Ag-Pd Reflectors for GaN-Based LEDs
TL;DR: In this article, two effects of Pd alloying atoms on the sulfurization of the surface Ag atoms have been drawn, which are (1) chemical state change effect and (2) surface microstructure effect.
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Quantitative study of electron tunneling dynamics in asymmetric coupled InGaN/GaN quantum wells
Guoen Weng,Yuejun Liu,Shaoqiang Chen,Takashi Ito,Xiaobo Hu,Chunhu Zhao,Jianping Liu,Junhao Chu,Hidefumi Akiyama +8 more
TL;DR: The extracted tunneling times are in good qualitative agreement with the data from the exponential fitting of the PL decay traces, which can be interpreted by the energy mismatches between relevant energy levels in the ACQWs.
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Photoemission Studies of the Electronic Structure of GaN Grown by Plasma Assisted Molecular Beam Epitaxy
TL;DR: In this article, the electronic and photoemission properties of the GaN epitaxial layer grown by molecular beam epitaxy with plasma activation of nitrogen on a SiC/Si (111) substrate are presented.
Elucidating the role of the InGaN UL in the efficiency of InGaN based light-emitting diodes
TL;DR: In this article, the authors investigated the role of the InGaN UL to capture point defects before they reach the GaN/GaN QW and found that indium atoms play a key role in the capture of SDs.
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The Studies on Gallium Nitride-Based Materials: A Bibliometric Analysis
TL;DR: In this article , a bibliometric analysis on the publications of GaN indexed in the Web of Science database from 1970 to 2023 was performed using Harzing's Publish or Perish tool, while science mappings were performed with VOSviewer software.
References
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Spontaneous polarization and piezoelectric constants of III-V nitrides
TL;DR: In this paper, the spontaneous polarization, dynamical Born charges, and piezoelectric constants of the III-V nitrides AlN, GaN, and InN are studied ab initio using the Berry-phase approach to polarization in solids.
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Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
Patrick Waltereit,Oliver Brandt,Achim Trampert,Holger T. Grahn,J. Menniger,Manfred Ramsteiner,M. Reiche,Klaus H. Ploog +7 more
TL;DR: It is demonstrated that the epitaxial growth of GaN/(Al,Ga)N on tetragonal LiAlO2 in a non-polar direction allows the fabrication of structures free of electrostatic fields, resulting in an improved quantum efficiency, which is expected to pave the way towards highly efficient white LEDs.
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Auger recombination in InGaN measured by photoluminescence
TL;DR: In this paper, the Auger recombination coefficient in quasi-bulk InxGa1−xN (x∼9%−15%) layers grown on GaN (0001) is measured by a photoluminescence technique.
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High dislocation densities in high efficiency GaN‐based light‐emitting diodes
TL;DR: In this article, the electrical, optical, and structural properties of light emitting diodes (LEDs) fabricated from the III-V nitride material system have been studied.
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Solid phase immiscibility in GaInN
I.H. Ho,Gerald B. Stringfellow +1 more
TL;DR: In this article, the temperature dependence of the binodal and spinodal lines in the Ga1−xInxN system was calculated using a modified valence force field model where the lattice is allowed to relax beyond the first nearest neighbor.