Journal ArticleDOI
Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays
Steven P. DenBaars,Daniel F. Feezell,Katheryn Kelchner,Siddha Pimputkar,Chi Chen Pan,Chia Chen Yen,Shinichi Tanaka,Yuji Zhao,Nathan Pfaff,Robert M. Farrell,Michael Iza,Stacia Keller,Umesh K. Mishra,James S. Speck,Shuji Nakamura +14 more
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TLDR
In this article, a review of the unique polarization anisotropy in gallium nitride (GaN) is included for the different crystal orientations, highlighting high power violet and blue emitters, and the effects of indium incorporation and well width.About:
This article is published in Acta Materialia.The article was published on 2013-02-01. It has received 346 citations till now. The article focuses on the topics: Light extraction in LEDs & Solid-state lighting.read more
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Theoretical study on the thermal transport and its tunability of a-plane trilayer GaN
TL;DR: In this paper , the thermal transport properties of a-plane trilayer gallium nitride were studied using molecular dynamics simulations, and the temperature, together with strain modulation on the thermal conductivity of the system was analyzed.
Journal ArticleDOI
Burton-Cabrera-Frank theory for surfaces with alternating step types
TL;DR: In this paper , a general solution for the dynamics of the terrace widths, assuming quasi-steady-state adatom distributions on the terraces, was obtained under widely applicable approximations.
Journal ArticleDOI
Effective Chemical Lift-Off for Air-Tunnel GaN on a Trapezoid-Patterned Sapphire Substrate
TL;DR: In this paper , an air-tunnel structure between a gallium nitride (GaN) layer and trapezoid-patterned sapphire substrate (TPSS) through the in situ carbonization of a photoresist layer to enable rapid chemical lift-off was fabricated.
Journal ArticleDOI
A new smart laser photoluminescent light (LPL) technology for the optimization of the on-street lighting performance and the maximum energy saving: Development of a prototype and field test
TL;DR: In this paper , an innovative smart lighting system based on a blue-diode laser technology combined with photoluminescent pavements is proposed to obtain a self-lighting surface with a substantial reduction in electricity consumption.
Proceedings ArticleDOI
Enhancement of light extraction by ZnO nanostructures on vertical GaN light-emitting diodes
TL;DR: In this paper, aqueous ammonia has been added to manipulate the pH values of the growth solution to optimize the morphology of the ZnO nanostructures and light extraction efficiency from GaN LED surface.
References
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Journal ArticleDOI
Spontaneous polarization and piezoelectric constants of III-V nitrides
TL;DR: In this paper, the spontaneous polarization, dynamical Born charges, and piezoelectric constants of the III-V nitrides AlN, GaN, and InN are studied ab initio using the Berry-phase approach to polarization in solids.
Journal ArticleDOI
Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
Patrick Waltereit,Oliver Brandt,Achim Trampert,Holger T. Grahn,J. Menniger,Manfred Ramsteiner,M. Reiche,Klaus H. Ploog +7 more
TL;DR: It is demonstrated that the epitaxial growth of GaN/(Al,Ga)N on tetragonal LiAlO2 in a non-polar direction allows the fabrication of structures free of electrostatic fields, resulting in an improved quantum efficiency, which is expected to pave the way towards highly efficient white LEDs.
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Auger recombination in InGaN measured by photoluminescence
TL;DR: In this paper, the Auger recombination coefficient in quasi-bulk InxGa1−xN (x∼9%−15%) layers grown on GaN (0001) is measured by a photoluminescence technique.
Journal ArticleDOI
High dislocation densities in high efficiency GaN‐based light‐emitting diodes
TL;DR: In this article, the electrical, optical, and structural properties of light emitting diodes (LEDs) fabricated from the III-V nitride material system have been studied.
Journal ArticleDOI
Solid phase immiscibility in GaInN
I.H. Ho,Gerald B. Stringfellow +1 more
TL;DR: In this article, the temperature dependence of the binodal and spinodal lines in the Ga1−xInxN system was calculated using a modified valence force field model where the lattice is allowed to relax beyond the first nearest neighbor.