Journal ArticleDOI
Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays
Steven P. DenBaars,Daniel F. Feezell,Katheryn Kelchner,Siddha Pimputkar,Chi Chen Pan,Chia Chen Yen,Shinichi Tanaka,Yuji Zhao,Nathan Pfaff,Robert M. Farrell,Michael Iza,Stacia Keller,Umesh K. Mishra,James S. Speck,Shuji Nakamura +14 more
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TLDR
In this article, a review of the unique polarization anisotropy in gallium nitride (GaN) is included for the different crystal orientations, highlighting high power violet and blue emitters, and the effects of indium incorporation and well width.About:
This article is published in Acta Materialia.The article was published on 2013-02-01. It has received 346 citations till now. The article focuses on the topics: Light extraction in LEDs & Solid-state lighting.read more
Citations
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Understanding Indium Nitride Thin Film Growth Under ALD Conditions by Atomic Scale Modelling: From the Bulk to the In-Rich Layer
Journal ArticleDOI
Mechanism of Ag sulfurization resistance improvement by alloying solutes in Ag-based alloy films
TL;DR: In this article, the chemical state of the alloying solutes in the Ag-based alloy films was examined using x-ray photoelectron spectroscopy analysis, and it was found that, with being alloyed in an Ag matrix phase, the 3d5/2 core-level peak positions of the In, Sn, and Pd solutes shifted toward the lower binding energy region, which is defined as a negative chemical shift.
Dissertation
All-inorganic heterostructure light-emitting devices based on ZnO nanoparticles
TL;DR: In this paper, a method to produce highly luminescent, green emitting ZnO quantum dots from the gas phase and without ligands from a nonthermal plasma is presented.
DissertationDOI
III-nitride Photonic Integrated Circuit: Multi-section GaN Laser Diodes for Smart Lighting and Visible Light Communication
TL;DR: In this article, a multi-section GaN laser diodes for smart lighting and visible light communication are presented. But they are not suitable for communication in the presence of visible light.
Journal ArticleDOI
Impact of Surface Chemistry and Doping Concentrations on Biofunctionalization of GaN/Ga‒In‒N Quantum Wells.
Nilanjon Naskar,Martin F. Schneidereit,Florian Huber,Sabyasachi Chakrabortty,Sabyasachi Chakrabortty,Lothar Veith,Markus Mezger,Lutz Kirste,Theo Fuchs,Thomas Diemant,Tanja Weil,Tanja Weil,R. Jürgen Behm,Klaus Thonke,Ferdinand Scholz +14 more
TL;DR: The necessity of Mg doping for achieving reasonable bio-functionalization of GaN surfaces is demonstrated and the amount of surface functionalized proteins is found.
References
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Journal ArticleDOI
Spontaneous polarization and piezoelectric constants of III-V nitrides
TL;DR: In this paper, the spontaneous polarization, dynamical Born charges, and piezoelectric constants of the III-V nitrides AlN, GaN, and InN are studied ab initio using the Berry-phase approach to polarization in solids.
Journal ArticleDOI
Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
Patrick Waltereit,Oliver Brandt,Achim Trampert,Holger T. Grahn,J. Menniger,Manfred Ramsteiner,M. Reiche,Klaus H. Ploog +7 more
TL;DR: It is demonstrated that the epitaxial growth of GaN/(Al,Ga)N on tetragonal LiAlO2 in a non-polar direction allows the fabrication of structures free of electrostatic fields, resulting in an improved quantum efficiency, which is expected to pave the way towards highly efficient white LEDs.
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Auger recombination in InGaN measured by photoluminescence
TL;DR: In this paper, the Auger recombination coefficient in quasi-bulk InxGa1−xN (x∼9%−15%) layers grown on GaN (0001) is measured by a photoluminescence technique.
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High dislocation densities in high efficiency GaN‐based light‐emitting diodes
TL;DR: In this article, the electrical, optical, and structural properties of light emitting diodes (LEDs) fabricated from the III-V nitride material system have been studied.
Journal ArticleDOI
Solid phase immiscibility in GaInN
I.H. Ho,Gerald B. Stringfellow +1 more
TL;DR: In this article, the temperature dependence of the binodal and spinodal lines in the Ga1−xInxN system was calculated using a modified valence force field model where the lattice is allowed to relax beyond the first nearest neighbor.