Journal ArticleDOI
Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays
Steven P. DenBaars,Daniel F. Feezell,Katheryn Kelchner,Siddha Pimputkar,Chi Chen Pan,Chia Chen Yen,Shinichi Tanaka,Yuji Zhao,Nathan Pfaff,Robert M. Farrell,Michael Iza,Stacia Keller,Umesh K. Mishra,James S. Speck,Shuji Nakamura +14 more
TLDR
In this article, a review of the unique polarization anisotropy in gallium nitride (GaN) is included for the different crystal orientations, highlighting high power violet and blue emitters, and the effects of indium incorporation and well width.About:
This article is published in Acta Materialia.The article was published on 2013-02-01. It has received 346 citations till now. The article focuses on the topics: Light extraction in LEDs & Solid-state lighting.read more
Citations
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Journal ArticleDOI
GaN-based light-emitting diodes on various substrates: a critical review.
TL;DR: This review focuses on state-of-the-art high-performance GaN-based LED materials and devices on unconventional substrates, and speculation on the prospects for LEDs on unconventional substrate is speculated.
Journal ArticleDOI
Color Conversion Materials for High-Brightness Laser-Driven Solid-State Lighting
Journal ArticleDOI
Application of Light-Emitting Diodes in Food Production, Postharvest Preservation, and Microbiological Food Safety
TL;DR: A review of the technology of LEDs and their role in food production, postharvest preservation, and in microbiological safety is provided in this paper, where several challenges and limitations are identified for further investigation.
Journal ArticleDOI
Combinatorial insights into doping control and transport properties of zinc tin nitride
Angela N. Fioretti,Angela N. Fioretti,Andriy Zakutayev,Helio Moutinho,Celeste L. Melamed,John D. Perkins,Andrew G. Norman,Mowafak Al-Jassim,Eric S. Toberer,Eric S. Toberer,Adele C. Tamboli,Adele C. Tamboli +11 more
TL;DR: In this article, a combinatorial RF co-sputtering approach was used to identify an optimal set of deposition parameters for obtaining as-deposited films with wurtzite crystal structure and carrier density as low as 1.8 × 1018 cm−3.
Journal ArticleDOI
Behavior of molecules and molecular ions near a field emitter
Baptiste Gault,Baptiste Gault,David W. Saxey,Michael Ashton,Susan B. Sinnott,Ann N. Chiaramonti,Michael P. Moody,Daniel K. Schreiber +7 more
TL;DR: In this article, a careful review of the literature is combined with the development of new methods to treat experimental APT data, the modelling of ion trajectories, and the application of density functional theory (DFT) simulations to derive molecular ion energetics.
References
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Journal ArticleDOI
Measurement of electron overflow in 450 nm InGaN light-emitting diode structures
TL;DR: In this article, the presence of electron overflow in light-emitting diodes under typical bias conditions was evaluated using test structures comprised of a standard LED structure with an extra Mg-doped quantum well inserted on the p-type side of the electron blocking layer.
Journal ArticleDOI
Improved electroluminescence on nonpolar m -plane InGaN/GaN quantum wells LEDs
Kwang-Choong Kim,Mathew C. Schmidt,Hitoshi Sato,Feng Wu,Natalie N. Fellows,Makoto Saito,Kenji Fujito,James S. Speck,Shuji Nakamura,Steven P. DenBaars +9 more
TL;DR: Improved nonpolar m-plane light emitting diodes (LEDs) with a thick InGaN multi-quantum well (MQW) structure have been fabricated on low extended defect bulk m -plane GaN substrates using metal organic chemical vapor deposition (MOCVD) as discussed by the authors.
Journal ArticleDOI
Inductively coupled plasma etching of bulk 6H-SiC and thin-film SiCN in NF3 chemistries
J. J. Wang,Eric Lambers,S. J. Pearton,Mikael Östling,Carl-Mikael Zetterling,J. M. Grow,Fan Ren,Randy J. Shul +7 more
TL;DR: A parametric study of the etching characteristics of 6H p+ and n+ SiC and thin-film SiC 0.5N0.5 in inductively coupled plasma (ICP) NF3/O2 and NF3 /Ar discharges has been performed as mentioned in this paper, where the etch rates in both chemistries increase monotonically with NF3 percentage and rf chuck power.
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Blue LEDs, UV photodiodes and high-temperature rectifiers in 6H-SiC
TL;DR: In this paper, the reverse bias breakdown appears to occur via avalanche multiplication processes exhibiting a sharp knee at breakdown, which corresponds to an extrapolated room temperature current density of ∼2 × 10-17 A/cm2 at -1.0 V.
Journal ArticleDOI
AlGaN-Cladding Free Green Semipolar GaN Based Laser Diode with a Lasing Wavelength of 506.4 nm
Anurag Tyagi,M. Robert Farrell,Kathryn M. Kelchner,Chia-Yen Huang,Po Shan Hsu,Daniel A. Haeger,Matthew T. Hardy,Casey Holder,Kenji Fujito,Daniel A. Cohen,Hiroaki Ohta,James S. Speck,Steven P. DenBaars,Shuji Nakamura +13 more
TL;DR: In this article, a simple AlGaN-cladding-free epitaxial structure, grown on semipolar (2021) GaN substrates, was demonstrated for In0.06Ga0.94N waveguiding layers to provide transverse optical mode confinement.