Journal ArticleDOI
Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays
Steven P. DenBaars,Daniel F. Feezell,Katheryn Kelchner,Siddha Pimputkar,Chi Chen Pan,Chia Chen Yen,Shinichi Tanaka,Yuji Zhao,Nathan Pfaff,Robert M. Farrell,Michael Iza,Stacia Keller,Umesh K. Mishra,James S. Speck,Shuji Nakamura +14 more
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TLDR
In this article, a review of the unique polarization anisotropy in gallium nitride (GaN) is included for the different crystal orientations, highlighting high power violet and blue emitters, and the effects of indium incorporation and well width.About:
This article is published in Acta Materialia.The article was published on 2013-02-01. It has received 346 citations till now. The article focuses on the topics: Light extraction in LEDs & Solid-state lighting.read more
Citations
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Effect of Light-Emitting Diodes (LEDs) on the Quality of Fruits and Vegetables During Postharvest Period: a Review
Sanusi Shamsudeen Nassarawa,Sanusi Shamsudeen Nassarawa,Asem Mahmoud Abdelshafy,Yanqun Xu,Li Li,Zisheng Luo +5 more
TL;DR: LED treatment is an efficient and promising strategy for extending the storage life of fruits and vegetables with enhanced nutritional values and reduction in microbial spoilage and delay senescence were evident after the LED exposure.
Journal ArticleDOI
InAlN underlayer for near ultraviolet InGaN based light emitting diodes
Camille Haller,Jean-François Carlin,Mauro Mosca,Mauro Mosca,Marta D. Rossell,Rolf Erni,Nicolas Grandjean +6 more
Journal ArticleDOI
Dynamic characteristics of 410 nm semipolar (202¯1¯) III-nitride laser diodes with a modulation bandwidth of over 5 GHz
Changmin Lee,Chong Zhang,Daniel L. Becerra,SeungGeun Lee,Charles A. Forman,Sang Ho Oh,Robert M. Farrell,James S. Speck,Shuji Nakamura,John E. Bowers,Steven P. DenBaars +10 more
TL;DR: In this paper, the dynamic characteristics of III-nitride multi-quantum well laser diodes (LDs) emitting at 410 nm were investigated, and a 3-dB bandwidth of 5 GHz and 5 Gbit/s direct modulation with on-off keying was demonstrated.
Journal ArticleDOI
Energy band engineering of InGaN/GaN multi-quantum-well solar cells via AlGaN electron- and hole-blocking layers
Xuanqi Huang,Hong Chen,Houqiang Fu,Izak Baranowski,Jossue Montes,Tsung-Han Yang,Kai Fu,Brendan P. Gunning,Daniel D. Koleske,Yuji Zhao +9 more
TL;DR: In this paper, the authors performed a comprehensive study on energy band engineering of InGaN multi-quantum-well (MQW) solar cells using AlGaN electron-and hole-blocking layers.
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High-power hybrid GaN-based green laser diodes with ITO cladding layer
Lei Hu,Xiaoyu Ren,Jianping Liu,Aiqin Tian,Lingrong Jiang,Siyi Huang,Wei Zhou,Liqun Zhang,Hui Yang +8 more
TL;DR: In this paper, a hybrid green laser diodes with an indium tin oxide (ITO) p-cladding layer can achieve threshold current density as low as 1.6 kA/cm2, which is only one third of the conventional LD structure.
References
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Journal ArticleDOI
Spontaneous polarization and piezoelectric constants of III-V nitrides
TL;DR: In this paper, the spontaneous polarization, dynamical Born charges, and piezoelectric constants of the III-V nitrides AlN, GaN, and InN are studied ab initio using the Berry-phase approach to polarization in solids.
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Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
Patrick Waltereit,Oliver Brandt,Achim Trampert,Holger T. Grahn,J. Menniger,Manfred Ramsteiner,M. Reiche,Klaus H. Ploog +7 more
TL;DR: It is demonstrated that the epitaxial growth of GaN/(Al,Ga)N on tetragonal LiAlO2 in a non-polar direction allows the fabrication of structures free of electrostatic fields, resulting in an improved quantum efficiency, which is expected to pave the way towards highly efficient white LEDs.
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Auger recombination in InGaN measured by photoluminescence
TL;DR: In this paper, the Auger recombination coefficient in quasi-bulk InxGa1−xN (x∼9%−15%) layers grown on GaN (0001) is measured by a photoluminescence technique.
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High dislocation densities in high efficiency GaN‐based light‐emitting diodes
TL;DR: In this article, the electrical, optical, and structural properties of light emitting diodes (LEDs) fabricated from the III-V nitride material system have been studied.
Journal ArticleDOI
Solid phase immiscibility in GaInN
I.H. Ho,Gerald B. Stringfellow +1 more
TL;DR: In this article, the temperature dependence of the binodal and spinodal lines in the Ga1−xInxN system was calculated using a modified valence force field model where the lattice is allowed to relax beyond the first nearest neighbor.