Journal ArticleDOI
Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays
Steven P. DenBaars,Daniel F. Feezell,Katheryn Kelchner,Siddha Pimputkar,Chi Chen Pan,Chia Chen Yen,Shinichi Tanaka,Yuji Zhao,Nathan Pfaff,Robert M. Farrell,Michael Iza,Stacia Keller,Umesh K. Mishra,James S. Speck,Shuji Nakamura +14 more
TLDR
In this article, a review of the unique polarization anisotropy in gallium nitride (GaN) is included for the different crystal orientations, highlighting high power violet and blue emitters, and the effects of indium incorporation and well width.About:
This article is published in Acta Materialia.The article was published on 2013-02-01. It has received 346 citations till now. The article focuses on the topics: Light extraction in LEDs & Solid-state lighting.read more
Citations
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Journal ArticleDOI
Island dynamics and anisotropy during vapor phase epitaxy of m-plane GaN
Edith Perret,Edith Perret,Dongwei Xu,Matthew J. Highland,G. B. Stephenson,Peter Zapol,Paul H. Fuoss,Anneli Munkholm,Carol Thompson +8 more
TL;DR: In this paper, the authors measured the diffuse scattering from islands that formed during layer-by-layer growth of GaN by metal-organic vapor phase epitaxy on the (101¯0) m-plane surface.
Journal ArticleDOI
Investigation of Micromorphology and Carrier Recombination Dynamics for InGaN/GaN Multi-Quantum Dots Grown by Molecular Beam Epitaxy
Xue Zhang,Wenxian Yang,Zhiwei Xing,Hai-Bing Qiu,Ying Gu,Bian Lifeng,Shulong Lu,Hua Qin,Yong Cai,Yuta Suzuki,Sakuya Kaneko,Yuki Matsuda,Shinji Izumi,Yuichi Nakamura,Atsushi Tackeuchi +14 more
TL;DR: In this article, self-assembled InGaN/GaN multi-quantum dots (MQDs) have been grown by plasma-assisted molecular beam epitaxy on c-plane GaN-on-sapphire template.
Journal ArticleDOI
Evaluation of lattice curvature and crystalline homogeneity for 2-inch GaN homo-epitaxial layer
Okkyun Seo,Jaemyung Kim,Chulho Song,Yanfang Lou,Loku Singgappulige Rosantha Kumara,Satoshi Hiroi,Yanna Chen,Yoshio Katsuya,Yoshihiro Irokawa,Toshihide Nabatame,Yasuo Koide,Osami Sakata +11 more
TL;DR: In this article, the lattice curvature, crystallinity, and crystalline homogeneity of a GaN layer on a free standing GaN substrate were evaluated using lattice orientation measurements, θ rocking curves, and reciprocal space mapping from synchrotron X-ray diffraction topography.
Journal ArticleDOI
Fabrication and luminous properties of phosphor ceramic for application in automotive laser headlight
Seok Bin Kwon,Bo Young Kim,In Seok Jang,Sie Wook Jeon,Wan Ho Kim,Ho-Jung Jeong,Kim Jaepil,Mong Kwon Jung,Byung Woo Jeong,Bong Kyun Kang,Dae Ho Yoon,Young Hyun Song +11 more
TL;DR: In this paper, the authors reported on the optimization of fabrication of a ceramic phosphor plate (CPP) using α-Al2O3 as functional materials for an automotive laser headlamp.
Journal ArticleDOI
Reduction of efficiency droop by inserting superlattice quaternary-ternary electron blocking layer in GaN-based light-emitting diodes
TL;DR: In this article, a quaternary-ternary superlattice electron blocking layer was proposed to reduce the unwanted hole blocking of the EBL by reducing the effective barrier height for holes.
References
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Journal ArticleDOI
Spontaneous polarization and piezoelectric constants of III-V nitrides
TL;DR: In this paper, the spontaneous polarization, dynamical Born charges, and piezoelectric constants of the III-V nitrides AlN, GaN, and InN are studied ab initio using the Berry-phase approach to polarization in solids.
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Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
Patrick Waltereit,Oliver Brandt,Achim Trampert,Holger T. Grahn,J. Menniger,Manfred Ramsteiner,M. Reiche,Klaus H. Ploog +7 more
TL;DR: It is demonstrated that the epitaxial growth of GaN/(Al,Ga)N on tetragonal LiAlO2 in a non-polar direction allows the fabrication of structures free of electrostatic fields, resulting in an improved quantum efficiency, which is expected to pave the way towards highly efficient white LEDs.
Journal ArticleDOI
Auger recombination in InGaN measured by photoluminescence
TL;DR: In this paper, the Auger recombination coefficient in quasi-bulk InxGa1−xN (x∼9%−15%) layers grown on GaN (0001) is measured by a photoluminescence technique.
Journal ArticleDOI
High dislocation densities in high efficiency GaN‐based light‐emitting diodes
TL;DR: In this article, the electrical, optical, and structural properties of light emitting diodes (LEDs) fabricated from the III-V nitride material system have been studied.
Journal ArticleDOI
Solid phase immiscibility in GaInN
I.H. Ho,Gerald B. Stringfellow +1 more
TL;DR: In this article, the temperature dependence of the binodal and spinodal lines in the Ga1−xInxN system was calculated using a modified valence force field model where the lattice is allowed to relax beyond the first nearest neighbor.