Journal ArticleDOI
Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays
Steven P. DenBaars,Daniel F. Feezell,Katheryn Kelchner,Siddha Pimputkar,Chi Chen Pan,Chia Chen Yen,Shinichi Tanaka,Yuji Zhao,Nathan Pfaff,Robert M. Farrell,Michael Iza,Stacia Keller,Umesh K. Mishra,James S. Speck,Shuji Nakamura +14 more
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TLDR
In this article, a review of the unique polarization anisotropy in gallium nitride (GaN) is included for the different crystal orientations, highlighting high power violet and blue emitters, and the effects of indium incorporation and well width.About:
This article is published in Acta Materialia.The article was published on 2013-02-01. It has received 346 citations till now. The article focuses on the topics: Light extraction in LEDs & Solid-state lighting.read more
Citations
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Proceedings ArticleDOI
Study on laser-based white light sources
TL;DR: In this paper, the color rendering index (CRI), correlated color temperature (CCT), and luminous flux analysis of laser white light sources by using the GaN laser diode exciting color converters at various driving conditions were reported.
Journal ArticleDOI
Calibration of Polarization Fields and Electro-Optical Response of Group-III Nitride Based c-Plane Quantum-Well Heterostructures by Application of Electro-Modulation Techniques
TL;DR: In this paper, the polarization fields and electro-optical response of PIN-diodes based on nearly lattice-matched InGaN/GaN and InAlN/GAN double heterostructure quantum wells grown on (0001) sapphire substrates by metalorganic vapor phase epitaxy were experimentally quantified.
Journal ArticleDOI
Indium Ammoniates from Ammonothermal Synthesis: InAlF6(NH3)2, [In(NH3)6][AlF6], and [In2F(NH3)10]2[SiF6]5 ∙ 2 NH3
TL;DR: The ammonothermal synthesis of three ammoniates of indium, namely InAlF6(NH3)2, [InNH3]6]3+ and [AlF 6]3− octahedra, was performed in supercritical ammonia as mentioned in this paper.
Proceedings ArticleDOI
Towards high reliability GaN LEDs: Understanding the physical origin of gradual and catastrophic failure
Matteo Meneghini,Carlo De Santi,Matteo Buffolo,Andrea Munaretto,Gaudenzio Meneghesso,Enrico Zanoni +5 more
TL;DR: In this paper, the most relevant mechanisms responsible for the gradual and catastrophic failure of InGaN-based light emitting diodes, for application in general lighting, are discussed based on recent results obtained on state-of-theart LEDs and lamps.
Book ChapterDOI
Fabrication and Characterization of GaN/AlN Resonant Tunneling Diodes
TL;DR: In this article, GaN/AlN resonant tunneling diodes were successfully demonstrated, and they could function well under the flux of very high current densities (e.g., ∼431 kA/cm2) without thermal breakdown.
References
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Journal ArticleDOI
Spontaneous polarization and piezoelectric constants of III-V nitrides
TL;DR: In this paper, the spontaneous polarization, dynamical Born charges, and piezoelectric constants of the III-V nitrides AlN, GaN, and InN are studied ab initio using the Berry-phase approach to polarization in solids.
Journal ArticleDOI
Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
Patrick Waltereit,Oliver Brandt,Achim Trampert,Holger T. Grahn,J. Menniger,Manfred Ramsteiner,M. Reiche,Klaus H. Ploog +7 more
TL;DR: It is demonstrated that the epitaxial growth of GaN/(Al,Ga)N on tetragonal LiAlO2 in a non-polar direction allows the fabrication of structures free of electrostatic fields, resulting in an improved quantum efficiency, which is expected to pave the way towards highly efficient white LEDs.
Journal ArticleDOI
Auger recombination in InGaN measured by photoluminescence
TL;DR: In this paper, the Auger recombination coefficient in quasi-bulk InxGa1−xN (x∼9%−15%) layers grown on GaN (0001) is measured by a photoluminescence technique.
Journal ArticleDOI
High dislocation densities in high efficiency GaN‐based light‐emitting diodes
TL;DR: In this article, the electrical, optical, and structural properties of light emitting diodes (LEDs) fabricated from the III-V nitride material system have been studied.
Journal ArticleDOI
Solid phase immiscibility in GaInN
I.H. Ho,Gerald B. Stringfellow +1 more
TL;DR: In this article, the temperature dependence of the binodal and spinodal lines in the Ga1−xInxN system was calculated using a modified valence force field model where the lattice is allowed to relax beyond the first nearest neighbor.