Journal ArticleDOI
Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays
Steven P. DenBaars,Daniel F. Feezell,Katheryn Kelchner,Siddha Pimputkar,Chi Chen Pan,Chia Chen Yen,Shinichi Tanaka,Yuji Zhao,Nathan Pfaff,Robert M. Farrell,Michael Iza,Stacia Keller,Umesh K. Mishra,James S. Speck,Shuji Nakamura +14 more
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TLDR
In this article, a review of the unique polarization anisotropy in gallium nitride (GaN) is included for the different crystal orientations, highlighting high power violet and blue emitters, and the effects of indium incorporation and well width.About:
This article is published in Acta Materialia.The article was published on 2013-02-01. It has received 346 citations till now. The article focuses on the topics: Light extraction in LEDs & Solid-state lighting.read more
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Analysis of efficiency curves in near-UV, blue, and green-emitting InGaN-based multiple quantum wells using rate equations of exciton recombination
Hideaki Murotani,Kazunori Shibuya,Ayumu Yoneda,Yuki Hashiguchi,Hiroyuki Miyoshi,Satoshi Kurai,Narihito Okada,Kazuyuki Tadatomo,Yoshiki Yano,Toshiya Tabuchi,Koh Matsumoto,Yoichi Yamada +11 more
TL;DR: In this paper, the internal quantum efficiency (IQE) of near-UV, blue, and green-emitting InGaN-based multiple quantum wells was evaluated as functions of excitation power density and temperature using photoluminescence spectroscopy.
Journal ArticleDOI
GaN Nanowire Growth Promoted by In-Ga-Au Alloy Catalyst with Emphasis on Agglomeration Temperature and In Composition.
Aadil Waseem,Muhammad Ali Johar,Mostafa Afifi Hassan,Indrajit V. Bagal,Ameer Abdullah,Jun-Seok Ha,June Key Lee,Sang-Wan Ryu +7 more
TL;DR: In this article, the authors reported the tuning of the orientation of GaN nanowires by varying the composition of indium (In) in gallium-gold (Ga-Au) alloy catalyst using metal-organic chemical vapor deposition (MOCVD).
Journal ArticleDOI
Polarity dependent strongly inhomogeneous In-incorporation in GaN nanocolumns.
C I Oppo,J. Malindretos,Reza R. Zamani,D. Broxtermann,J. Segura-Ruiz,Gema Martínez-Criado,Pier Carlo Ricci,A. Rizzi +7 more
TL;DR: In this work, GaN/InGaN/GaN nanocolumns (NCs) have been grown by molecular beam epitaxy and Selective area growth (SAG) and self-organized growth (SOG) were performed simultaneously in patterned and unpatterned regions of the same substrate, respectively.
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Effects of saturation of nonradiative recombination centers on internal quantum efficiency in InGaN light-emitting diodes
Hideaki Murotani,Yoichi Yamada +1 more
TL;DR: In this paper, the internal quantum efficiency (IQE) of InGaN near-UV light-emitting diodes with different threading dislocation densities (TDDs) was studied by using excitation power density and temperature-dependent photoluminescence spectroscopy.
References
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Journal ArticleDOI
Spontaneous polarization and piezoelectric constants of III-V nitrides
TL;DR: In this paper, the spontaneous polarization, dynamical Born charges, and piezoelectric constants of the III-V nitrides AlN, GaN, and InN are studied ab initio using the Berry-phase approach to polarization in solids.
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Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
Patrick Waltereit,Oliver Brandt,Achim Trampert,Holger T. Grahn,J. Menniger,Manfred Ramsteiner,M. Reiche,Klaus H. Ploog +7 more
TL;DR: It is demonstrated that the epitaxial growth of GaN/(Al,Ga)N on tetragonal LiAlO2 in a non-polar direction allows the fabrication of structures free of electrostatic fields, resulting in an improved quantum efficiency, which is expected to pave the way towards highly efficient white LEDs.
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Auger recombination in InGaN measured by photoluminescence
TL;DR: In this paper, the Auger recombination coefficient in quasi-bulk InxGa1−xN (x∼9%−15%) layers grown on GaN (0001) is measured by a photoluminescence technique.
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High dislocation densities in high efficiency GaN‐based light‐emitting diodes
TL;DR: In this article, the electrical, optical, and structural properties of light emitting diodes (LEDs) fabricated from the III-V nitride material system have been studied.
Journal ArticleDOI
Solid phase immiscibility in GaInN
I.H. Ho,Gerald B. Stringfellow +1 more
TL;DR: In this article, the temperature dependence of the binodal and spinodal lines in the Ga1−xInxN system was calculated using a modified valence force field model where the lattice is allowed to relax beyond the first nearest neighbor.