Journal ArticleDOI
Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays
Steven P. DenBaars,Daniel F. Feezell,Katheryn Kelchner,Siddha Pimputkar,Chi Chen Pan,Chia Chen Yen,Shinichi Tanaka,Yuji Zhao,Nathan Pfaff,Robert M. Farrell,Michael Iza,Stacia Keller,Umesh K. Mishra,James S. Speck,Shuji Nakamura +14 more
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TLDR
In this article, a review of the unique polarization anisotropy in gallium nitride (GaN) is included for the different crystal orientations, highlighting high power violet and blue emitters, and the effects of indium incorporation and well width.About:
This article is published in Acta Materialia.The article was published on 2013-02-01. It has received 346 citations till now. The article focuses on the topics: Light extraction in LEDs & Solid-state lighting.read more
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Journal ArticleDOI
Vertical hole transport through unipolar InGaN quantum wells and double heterostructures
TL;DR: In this article , the authors report unipolar hole transport through unintentionally doped (UID) c-plane Ga-polar InGaN heterostructures to investigate the impact of alloy disorder on vertical transport.
Book ChapterDOI
Doping Effect on Bandgap Energy and Luminescence Spectrum for AlN-Based Semiconductor
TL;DR: In this paper , the heavy doping effect on the Aluminum Nitride (AlN) semiconductor (SC) material illustrated via its energy-band structure (EBS) was reported.
Journal ArticleDOI
In-Composition Graded Quantum Barriers for Polarization Manipulation in InGaN-Based Yellow Light-Emitting Diodes
TL;DR: In this article , an InGaN quantum barrier with linear-increase Incomposition along [0001] direction was reported for LEDs with high performance in long-wavelength spectral region.
Journal ArticleDOI
Bright white electroluminescence from polycrystalline dysprosium-doped yttrium gallium garnet nanofilms fabricated by atomic layer deposition on silicon.
TL;DR: In this paper , the conduction mechanism is confirmed to be the Poole-Frenkel mode under operation electric fields and the impact of Dy3+ ions by energetic electrons results in emission.
Journal ArticleDOI
Study on Optical Properties of Indium-Graded Semipolar InGaN/GaN Quantum Well
TL;DR: The electronic and optical properties of indium-graded semipolar quantum well (QW) structures with different indium variation schemes and well widths have been investigated by.
References
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Journal ArticleDOI
Spontaneous polarization and piezoelectric constants of III-V nitrides
TL;DR: In this paper, the spontaneous polarization, dynamical Born charges, and piezoelectric constants of the III-V nitrides AlN, GaN, and InN are studied ab initio using the Berry-phase approach to polarization in solids.
Journal ArticleDOI
Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
Patrick Waltereit,Oliver Brandt,Achim Trampert,Holger T. Grahn,J. Menniger,Manfred Ramsteiner,M. Reiche,Klaus H. Ploog +7 more
TL;DR: It is demonstrated that the epitaxial growth of GaN/(Al,Ga)N on tetragonal LiAlO2 in a non-polar direction allows the fabrication of structures free of electrostatic fields, resulting in an improved quantum efficiency, which is expected to pave the way towards highly efficient white LEDs.
Journal ArticleDOI
Auger recombination in InGaN measured by photoluminescence
TL;DR: In this paper, the Auger recombination coefficient in quasi-bulk InxGa1−xN (x∼9%−15%) layers grown on GaN (0001) is measured by a photoluminescence technique.
Journal ArticleDOI
High dislocation densities in high efficiency GaN‐based light‐emitting diodes
TL;DR: In this article, the electrical, optical, and structural properties of light emitting diodes (LEDs) fabricated from the III-V nitride material system have been studied.
Journal ArticleDOI
Solid phase immiscibility in GaInN
I.H. Ho,Gerald B. Stringfellow +1 more
TL;DR: In this article, the temperature dependence of the binodal and spinodal lines in the Ga1−xInxN system was calculated using a modified valence force field model where the lattice is allowed to relax beyond the first nearest neighbor.