Journal ArticleDOI
High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior
Wataru Saito,Yoshiharu Takada,Masahiko Kuraguchi,Kunio Tsuda,Ichiro Omura,T. Ogura,Hiromichi Ohashi +6 more
TLDR
AlGaN-GaN power high-electron mobility transistors (HEMTs) with 600-V breakdown voltage are fabricated and demonstrated as switching power devices for motor drive and power supply applications.Abstract:
AlGaN-GaN power high-electron mobility transistors (HEMTs) with 600-V breakdown voltage are fabricated and demonstrated as switching power devices for motor drive and power supply applications. The fabricated power HEMT realized the high breakdown voltage by optimized field plate technique and the low on-state resistance of 3.3 m/spl Omega/cm/sup 2/, which is 20 times lower than that or silicon MOSFETs, thanks to the high critical field of GaN material and the high mobility in 2DEG channel. The fabricated devices also demonstrated the high current density switching of 850 A/cm/sup 2/ turn-off. These results show that AlGaN-GaN power-HEMTs are one of the most promising candidates for future switching power device for power electronics applications.read more
Citations
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Journal ArticleDOI
Effect of substrate misorientation on the concentration of impurities and surface morphology of an epitaxial GaN layer on N-polar GaN substrate by MOVPE
Kentaro Nagamatsu,Yuto Ando,Tsukasa Kono,Heajeong Cheong,Shugo Nitta,Yoshio Honda,Markus Pristovsek,Hiroshi Amano +7 more
TL;DR: In this article, the effect of misorientation on the residual impurity and surface morphology of N-polar GaN grown by metalorganic vapor phase epitaxy was examined, and it was shown that m-direction steps are stable for GaN growth.
Patent
Semiconductor device with high electron mobility transistor
TL;DR: In this article, the authors describe a semiconductor device consisting of a HEMT and a diode, which includes an anode electrically connected to the gate electrode and a cathode connecting to the drain electrode.
Dilute-Anion III-Nitride Semiconductor Materials and Nanostructures
TL;DR: Theoretical modeling of Auger process in III-Nitride Semiconductor 1.1.1 as mentioned in this paper, 3.2.3, 2.3.4, 3.4.
Proceedings ArticleDOI
A discussion on the DC and switching performance of a gallium nitride CAVET for 1.2kV application
Dong Ji,Srabanti Chowdhury +1 more
TL;DR: In this article, a GaN CAVET has been simulated and analyzed using a device/circuit hybrid simulator implemented in Silvaco ATLAS, which was achieved by integrating the 2D drift-diffusion simulator with the SPICE based circuit simulator.
Journal ArticleDOI
A monolithically integrated micro-LED display based on GaN-on-silicon substrate
Choi Jung Hun,Seung Jun Lee,Kyu Oh Kwon,Jae Yong Choi,Taeil Jung,Myung-Soo Han,Seung Jun Han +6 more
TL;DR: In this paper, an active matrix (AM) display was realized by interconnecting nitride-based LEDs as display pixels with Si thin-film transistors (TFTs) as driving circuitries.
References
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Proceedings ArticleDOI
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TL;DR: In this article, the authors proposed a new device concept for high voltage power devices based on charge compensation in the drift region of the transistor, which achieved a shrink factor of 5 versus the actual state of the art in power MOSFETs.
Journal ArticleDOI
10-W/mm AlGaN-GaN HFET with a field modulating plate
TL;DR: In this paper, a 1mm-wide field modulating plate (FP) was used to achieve a power density of 10.3 W with a linear gain of 18.0 dB and a power added efficiency of 47.3% at 2 GHz.
Journal ArticleDOI
High breakdown GaN HEMT with overlapping gate structure
TL;DR: In this paper, a GaN high electron mobility transistors (HEMTs) were fabricated using an overlapping-gate technique in which the drain-side edge of the metal gate overlaps on a high breakdown and high dielectric constant dielectrics.