Journal ArticleDOI
High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior
Wataru Saito,Yoshiharu Takada,Masahiko Kuraguchi,Kunio Tsuda,Ichiro Omura,T. Ogura,Hiromichi Ohashi +6 more
TLDR
AlGaN-GaN power high-electron mobility transistors (HEMTs) with 600-V breakdown voltage are fabricated and demonstrated as switching power devices for motor drive and power supply applications.Abstract:
AlGaN-GaN power high-electron mobility transistors (HEMTs) with 600-V breakdown voltage are fabricated and demonstrated as switching power devices for motor drive and power supply applications. The fabricated power HEMT realized the high breakdown voltage by optimized field plate technique and the low on-state resistance of 3.3 m/spl Omega/cm/sup 2/, which is 20 times lower than that or silicon MOSFETs, thanks to the high critical field of GaN material and the high mobility in 2DEG channel. The fabricated devices also demonstrated the high current density switching of 850 A/cm/sup 2/ turn-off. These results show that AlGaN-GaN power-HEMTs are one of the most promising candidates for future switching power device for power electronics applications.read more
Citations
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Journal ArticleDOI
Fast Switching $\beta$ -Ga 2 O 3 Power MOSFET With a Trench-Gate Structure
Hang Dong,Shibing Long,Haiding Sun,Xiaolong Zhao,Qiming He,Yuan Qin,Guangzhong Jian,Xuanze Zhou,Yangtong Yu,Wei Guo,Wenhao Xiong,Weibing Hao,Ying Zhang,Huiwen Xue,Xueqiang Xiang,Zhaoan Yu,Hangbing Lv,Qi Liu,Ming Liu +18 more
TL;DR: In this letter, trench-gate metal–oxide–semiconductor field-effect transistors on (010) and Ga-2-O-3 epitaxial layer are fabricated, and the static and dynamic switching properties of the trench-Gate device show the potential of inline-formula.
Journal ArticleDOI
Electrothermal studies of GaN-based high electron mobility transistors with improved thermal designs
TL;DR: In this paper, the authors used coupled electron and phonon Monte Carlo (MC) simulations to provide the most accurate temperature predictions of the transistor region, where the phonon MC simulations can be coupled with conventional Fourier's law analysis for regions away from the transistor.
Journal ArticleDOI
Stress reduction in epitaxial GaN films on Si using cubic SiC as intermediate layers
TL;DR: In this paper, the tensile stress in the epitaxial films of GaN on Si is reduced by using SiC as intermediate layers, and the SiC intermediate layers are promising for the realization of nitride based electronic devices on Si.
Journal ArticleDOI
Quality of the Oxidation Interface of AlGaN in Enhancement-Mode AlGaN/GaN High-Electron Mobility Transistors
TL;DR: In this article, an enhancement-mode AlGaN/GaN high-electron mobility transistors (HEMTs) were realized by applying the O2 and N2O plasma oxidation method to the Schottky layers.
Journal ArticleDOI
An AlN/Ultrathin AlGaN/GaN HEMT Structure for Enhancement-Mode Operation Using Selective Etching
Travis J. Anderson,Marko J. Tadjer,Michael A. Mastro,Jennifer K. Hite,Karl D. Hobart,C. R. Eddy,Francis J. Kub +6 more
TL;DR: In this article, an ultrathin AlGaN barrier layer capped by an AlN layer in the source-drain access regions has been implemented to reliably control threshold voltage in AlGAN/GaN high-electron-mobility transistors.
References
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Journal ArticleDOI
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Proceedings ArticleDOI
A new generation of high voltage MOSFETs breaks the limit line of silicon
TL;DR: In this article, the authors proposed a new device concept for high voltage power devices based on charge compensation in the drift region of the transistor, which achieved a shrink factor of 5 versus the actual state of the art in power MOSFETs.
Journal ArticleDOI
10-W/mm AlGaN-GaN HFET with a field modulating plate
TL;DR: In this paper, a 1mm-wide field modulating plate (FP) was used to achieve a power density of 10.3 W with a linear gain of 18.0 dB and a power added efficiency of 47.3% at 2 GHz.
Journal ArticleDOI
High breakdown GaN HEMT with overlapping gate structure
TL;DR: In this paper, a GaN high electron mobility transistors (HEMTs) were fabricated using an overlapping-gate technique in which the drain-side edge of the metal gate overlaps on a high breakdown and high dielectric constant dielectrics.