Journal ArticleDOI
High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior
Wataru Saito,Yoshiharu Takada,Masahiko Kuraguchi,Kunio Tsuda,Ichiro Omura,T. Ogura,Hiromichi Ohashi +6 more
TLDR
AlGaN-GaN power high-electron mobility transistors (HEMTs) with 600-V breakdown voltage are fabricated and demonstrated as switching power devices for motor drive and power supply applications.Abstract:
AlGaN-GaN power high-electron mobility transistors (HEMTs) with 600-V breakdown voltage are fabricated and demonstrated as switching power devices for motor drive and power supply applications. The fabricated power HEMT realized the high breakdown voltage by optimized field plate technique and the low on-state resistance of 3.3 m/spl Omega/cm/sup 2/, which is 20 times lower than that or silicon MOSFETs, thanks to the high critical field of GaN material and the high mobility in 2DEG channel. The fabricated devices also demonstrated the high current density switching of 850 A/cm/sup 2/ turn-off. These results show that AlGaN-GaN power-HEMTs are one of the most promising candidates for future switching power device for power electronics applications.read more
Citations
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Journal ArticleDOI
Ti/Al/Ti/TiW Au-free low temperature ohmic contacts for un-doped AlGaN/GaN HEMTs
TL;DR: In this paper, an Au-free low temperature low temperature ohmic contact for un-doped AlGaN/GaN HEMTs with Ti/Al/TiTi/TiW metal structure was presented.
Journal ArticleDOI
Bulk single-crystal growth of ternary AlxGa1-xN from solution in gallium under high pressure
Andrey Belousov,Sergiy Katrych,J. Jun,Jie Zhang,Detlef Günther,Roman Sobolewski,J. Karpinski,Bertram Batlogg +7 more
TL;DR: In this paper, the authors have successfully grown bulk, single crystals of Al x Ga 1− x N with the Al content x ranging from 0.5 to 0.9, from Ga melt under high nitrogen pressure (up to 10kbar) and at high temperature ( up to 1800 ǫ c).
Journal Article
New Model of Fe Diffusion in Highly Resistive Fe-Doped Buffer Layer for GaN High-Electron-Mobility Transistor (Special Issue : Recent Advances in Nitride Semiconductors)
Journal ArticleDOI
Degradation Characteristics of Normally-Off p-AlGaN Gate AlGaN/GaN HEMTs With 5 MeV Proton Irradiation
TL;DR: In this article, proton irradiation at 5 MeV was performed on normally off p-AlGaN gate AlGaN/GaN high electron mobility transistors (HEMTs) and the increase of on-resistance and degradation of subthreshold characteristics were observed after irradiation.
Journal ArticleDOI
Polarization Engineering in PZT/AlGaN/GaN High-Electron-Mobility Transistors
TL;DR: In this paper, a 30-nm Pb (Zr,Ti) O3 (PZT)/AlGaN/GaN high-electron-mobility transistors (HEMTs) is demonstrated.
References
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Journal ArticleDOI
Wide bandgap compound semiconductors for superior high-voltage unipolar power devices
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Proceedings ArticleDOI
A new generation of high voltage MOSFETs breaks the limit line of silicon
TL;DR: In this article, the authors proposed a new device concept for high voltage power devices based on charge compensation in the drift region of the transistor, which achieved a shrink factor of 5 versus the actual state of the art in power MOSFETs.
Journal ArticleDOI
10-W/mm AlGaN-GaN HFET with a field modulating plate
TL;DR: In this paper, a 1mm-wide field modulating plate (FP) was used to achieve a power density of 10.3 W with a linear gain of 18.0 dB and a power added efficiency of 47.3% at 2 GHz.
Journal ArticleDOI
High breakdown GaN HEMT with overlapping gate structure
TL;DR: In this paper, a GaN high electron mobility transistors (HEMTs) were fabricated using an overlapping-gate technique in which the drain-side edge of the metal gate overlaps on a high breakdown and high dielectric constant dielectrics.