Journal ArticleDOI
High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior
Wataru Saito,Yoshiharu Takada,Masahiko Kuraguchi,Kunio Tsuda,Ichiro Omura,T. Ogura,Hiromichi Ohashi +6 more
TLDR
AlGaN-GaN power high-electron mobility transistors (HEMTs) with 600-V breakdown voltage are fabricated and demonstrated as switching power devices for motor drive and power supply applications.Abstract:
AlGaN-GaN power high-electron mobility transistors (HEMTs) with 600-V breakdown voltage are fabricated and demonstrated as switching power devices for motor drive and power supply applications. The fabricated power HEMT realized the high breakdown voltage by optimized field plate technique and the low on-state resistance of 3.3 m/spl Omega/cm/sup 2/, which is 20 times lower than that or silicon MOSFETs, thanks to the high critical field of GaN material and the high mobility in 2DEG channel. The fabricated devices also demonstrated the high current density switching of 850 A/cm/sup 2/ turn-off. These results show that AlGaN-GaN power-HEMTs are one of the most promising candidates for future switching power device for power electronics applications.read more
Citations
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Journal ArticleDOI
Current collapse modeling in AlGaN/GaN HEMT using small signal equivalent circuit for high power application
TL;DR: In this paper, the drain current collapse in AlGaN/GaN High Electron Mobility Transistor (HEMT) with field plate engineering is investigated and a new drain current model is derived.
Patent
Enhancement mode gan hemt device and method for fabricating the same
TL;DR: An enhancement-mode GaN transistor and a method of forming it are described in this article, where the gate III-V compound and gate metal are formed with a single photo mask process to be self-aligned and the bottom of the gate metal and the top of gate compound have the same dimension.
Journal ArticleDOI
Transport characteristics of AlGaN/GaN/AlGaN double heterostructures with high electron mobility
Fanna Meng,Jincheng Zhang,Hao Zhou,Juncai Ma,JunShuai Xue,Lisha Dang,Linxia Zhang,Ming Lu,Shan Ai,Xiaogang Li,Yue Hao +10 more
TL;DR: In this article, a composite buffer layer structure, including GaN and AlGaN layer, was used to improve the crystal quality of the double heterostructure, and an ultrathin AlN interlayer was inserted between the GaN channel layer and the buffer layer to decrease the alloy disorder scattering.
Journal ArticleDOI
Improvement of the Off-State Breakdown Voltage With Fluorine Ion Implantation in AlGaN/GaN HEMTs
Maojun Wang,Kevin J. Chen +1 more
TL;DR: In this article, the authors improved the off-state breakdown voltage by implanting 19F+ ions at an energy of 50 keV and dose of 1 × 1012 cm-2 under the gate region using BF3 as the source.
Journal ArticleDOI
Modeling of High Composition AlGaN Channel HEMTs with Large Threshold Voltage
TL;DR: In this article, the potential of high electron mobility transistors (HEMTs) consisting of high composition AlGaN channel and barrier layers for power switching applications was investigated and it was shown that threshold voltages in excess of 3 V can be achieved through the use of high GaN channel layers.
References
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Journal ArticleDOI
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TL;DR: In this paper, the authors review recent trends in power semiconductor device technology that are leading to improvements in power losses for power electronic systems and predict that silicon carbide based switches will begin to displace these silicon devices.
Journal ArticleDOI
Wide bandgap compound semiconductors for superior high-voltage unipolar power devices
T.P. Chow,R. Tyagi +1 more
TL;DR: In this article, a critical evaluation of the performance capabilities of various wide bandgap semiconductors for high power and high frequency unipolar electronic devices is presented, and seven different figures of merit have been analyzed.
Proceedings ArticleDOI
A new generation of high voltage MOSFETs breaks the limit line of silicon
TL;DR: In this article, the authors proposed a new device concept for high voltage power devices based on charge compensation in the drift region of the transistor, which achieved a shrink factor of 5 versus the actual state of the art in power MOSFETs.
Journal ArticleDOI
10-W/mm AlGaN-GaN HFET with a field modulating plate
TL;DR: In this paper, a 1mm-wide field modulating plate (FP) was used to achieve a power density of 10.3 W with a linear gain of 18.0 dB and a power added efficiency of 47.3% at 2 GHz.
Journal ArticleDOI
High breakdown GaN HEMT with overlapping gate structure
TL;DR: In this paper, a GaN high electron mobility transistors (HEMTs) were fabricated using an overlapping-gate technique in which the drain-side edge of the metal gate overlaps on a high breakdown and high dielectric constant dielectrics.