Journal ArticleDOI
High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior
Wataru Saito,Yoshiharu Takada,Masahiko Kuraguchi,Kunio Tsuda,Ichiro Omura,T. Ogura,Hiromichi Ohashi +6 more
TLDR
AlGaN-GaN power high-electron mobility transistors (HEMTs) with 600-V breakdown voltage are fabricated and demonstrated as switching power devices for motor drive and power supply applications.Abstract:
AlGaN-GaN power high-electron mobility transistors (HEMTs) with 600-V breakdown voltage are fabricated and demonstrated as switching power devices for motor drive and power supply applications. The fabricated power HEMT realized the high breakdown voltage by optimized field plate technique and the low on-state resistance of 3.3 m/spl Omega/cm/sup 2/, which is 20 times lower than that or silicon MOSFETs, thanks to the high critical field of GaN material and the high mobility in 2DEG channel. The fabricated devices also demonstrated the high current density switching of 850 A/cm/sup 2/ turn-off. These results show that AlGaN-GaN power-HEMTs are one of the most promising candidates for future switching power device for power electronics applications.read more
Citations
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Journal ArticleDOI
Improved small‐signal hybrid parameter‐extraction technique for AlGaN/GaN high electron mobility transistors
Proceedings ArticleDOI
Dependence of avalanche breakdown on surface & buffer traps in AlGaN/GaN HEMTs
TL;DR: In this article, the influence of traps on avalanche breakdown of AlGaN/GaN HEMTs is discussed, and the impact of surface and bulk traps on breakdown voltage and device scaling is discussed with associated physics.
Journal ArticleDOI
Performance of GaN Metal–Oxide–Semiconductor Field-Effect Transistor with Regrown n+-Source/Drain on a Selectively Etched GaN
Do-Kywn Kim,Dong-Seok Kim,Sungjae Chang,Chang-Ju Lee,Young-Ho Bae,Sorin Cristoloveanu,Jung-Hee Lee,Sung-Ho Hahm +7 more
TL;DR: In this paper, an epitaxially regrown n+ GaN source/drain after a short period of dry etching on a sapphire substrate was proposed and fabricated normally off GaN MOSFETs.
Journal ArticleDOI
Nanoscale investigation of the silicon carbide double-diffused MOSFET with scanning capacitance force microscopy
TL;DR: In this article, the authors achieved nanoscale observation of power semiconductor devices by scanning probe microscopy (SPM) based on the combination of atomic force microscopy, KFM, and SCFM.
Journal ArticleDOI
Computational analysis of breakdown voltage enhancement for AlGaN/GaN HEMTs through optimal pairing of deep level impurity density and contact design
TL;DR: In this paper, the authors explore the possibility of achieving breakdown voltage scaling using deep acceptors in the buffer for AlGaN/GaN HEMTs, and find an optimal acceptor density (10 17 cm −3 ) for which the electric field shows the most uniform distribution over the entire L gd.
References
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Journal ArticleDOI
Trends in power semiconductor devices
TL;DR: In this paper, the authors review recent trends in power semiconductor device technology that are leading to improvements in power losses for power electronic systems and predict that silicon carbide based switches will begin to displace these silicon devices.
Journal ArticleDOI
Wide bandgap compound semiconductors for superior high-voltage unipolar power devices
T.P. Chow,R. Tyagi +1 more
TL;DR: In this article, a critical evaluation of the performance capabilities of various wide bandgap semiconductors for high power and high frequency unipolar electronic devices is presented, and seven different figures of merit have been analyzed.
Proceedings ArticleDOI
A new generation of high voltage MOSFETs breaks the limit line of silicon
TL;DR: In this article, the authors proposed a new device concept for high voltage power devices based on charge compensation in the drift region of the transistor, which achieved a shrink factor of 5 versus the actual state of the art in power MOSFETs.
Journal ArticleDOI
10-W/mm AlGaN-GaN HFET with a field modulating plate
TL;DR: In this paper, a 1mm-wide field modulating plate (FP) was used to achieve a power density of 10.3 W with a linear gain of 18.0 dB and a power added efficiency of 47.3% at 2 GHz.
Journal ArticleDOI
High breakdown GaN HEMT with overlapping gate structure
TL;DR: In this paper, a GaN high electron mobility transistors (HEMTs) were fabricated using an overlapping-gate technique in which the drain-side edge of the metal gate overlaps on a high breakdown and high dielectric constant dielectrics.