Journal ArticleDOI
High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior
Wataru Saito,Yoshiharu Takada,Masahiko Kuraguchi,Kunio Tsuda,Ichiro Omura,T. Ogura,Hiromichi Ohashi +6 more
TLDR
AlGaN-GaN power high-electron mobility transistors (HEMTs) with 600-V breakdown voltage are fabricated and demonstrated as switching power devices for motor drive and power supply applications.Abstract:
AlGaN-GaN power high-electron mobility transistors (HEMTs) with 600-V breakdown voltage are fabricated and demonstrated as switching power devices for motor drive and power supply applications. The fabricated power HEMT realized the high breakdown voltage by optimized field plate technique and the low on-state resistance of 3.3 m/spl Omega/cm/sup 2/, which is 20 times lower than that or silicon MOSFETs, thanks to the high critical field of GaN material and the high mobility in 2DEG channel. The fabricated devices also demonstrated the high current density switching of 850 A/cm/sup 2/ turn-off. These results show that AlGaN-GaN power-HEMTs are one of the most promising candidates for future switching power device for power electronics applications.read more
Citations
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Journal ArticleDOI
Analysis of lags and current collapse in source-field-plate AlGaN/GaN high-electron-mobility transistors
TL;DR: In this article, a two-dimensional transient analysis of source-field-plate AlGaN/GaN high-electron-mobility transistors is performed by considering a deep donor and a deep acceptor in a buffer layer, and the results are compared with those in the case of gate-fieldplate structures.
Journal ArticleDOI
Surface Modification of GaN Substrate by Atmospheric Pressure Microplasma
TL;DR: In this paper, surface modification of GaN substrates by microplasma was investigated, which is an atmospheric pressure nonthermal plasma and a type of dielectric barrier discharge.
Journal ArticleDOI
Anisotropic mosaicity and lattice-plane twisting of an m -plane GaN homoepitaxial layer
Jaemyung Kim,Okkyun Seo,Atsushi Tanaka,Jun Chen,Kenji Watanabe,Yoshio Katsuya,Toshihide Nabatame,Yoshihiro Irokawa,Yasuo Koide,Osami Sakata +9 more
TL;DR: In this paper, anisotropic mosaicity of an m-plane GaN homoepitaxial layer was observed by X-ray diffraction topography imaging over a wafer and Xray rocking curves measured at various wafer points.
Proceedings ArticleDOI
High Breakdown Voltage and Low Specific On-resistance C-doped GaN-on-sapphire HFETs for Low-loss and High-power Switching Applications
TL;DR: In this paper, high-quality C-doped GaN buffers grown on sapphire substrates were employed for the fabrication of high-power AlGaN/GaN heterojunction field effect transistors (HFETs).
Journal ArticleDOI
Performance Enhancement for AlGaN/GaN HEMTs with Dual Discrete Field-plate
TL;DR: In this article , the authors proposed optimized field plate structures to improve the performance of AlGaN/GaN HEMT under electrical stress and achieved the highest off-state breakdown voltage (VBD) of 1188 V and 1120 V in the experiment, respectively, being 33 % and 25 % higher than that of NDFP-HEMT.
References
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Journal ArticleDOI
Wide bandgap compound semiconductors for superior high-voltage unipolar power devices
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TL;DR: In this article, a critical evaluation of the performance capabilities of various wide bandgap semiconductors for high power and high frequency unipolar electronic devices is presented, and seven different figures of merit have been analyzed.
Proceedings ArticleDOI
A new generation of high voltage MOSFETs breaks the limit line of silicon
TL;DR: In this article, the authors proposed a new device concept for high voltage power devices based on charge compensation in the drift region of the transistor, which achieved a shrink factor of 5 versus the actual state of the art in power MOSFETs.
Journal ArticleDOI
10-W/mm AlGaN-GaN HFET with a field modulating plate
TL;DR: In this paper, a 1mm-wide field modulating plate (FP) was used to achieve a power density of 10.3 W with a linear gain of 18.0 dB and a power added efficiency of 47.3% at 2 GHz.
Journal ArticleDOI
High breakdown GaN HEMT with overlapping gate structure
TL;DR: In this paper, a GaN high electron mobility transistors (HEMTs) were fabricated using an overlapping-gate technique in which the drain-side edge of the metal gate overlaps on a high breakdown and high dielectric constant dielectrics.