Journal ArticleDOI
High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior
Wataru Saito,Yoshiharu Takada,Masahiko Kuraguchi,Kunio Tsuda,Ichiro Omura,T. Ogura,Hiromichi Ohashi +6 more
TLDR
AlGaN-GaN power high-electron mobility transistors (HEMTs) with 600-V breakdown voltage are fabricated and demonstrated as switching power devices for motor drive and power supply applications.Abstract:
AlGaN-GaN power high-electron mobility transistors (HEMTs) with 600-V breakdown voltage are fabricated and demonstrated as switching power devices for motor drive and power supply applications. The fabricated power HEMT realized the high breakdown voltage by optimized field plate technique and the low on-state resistance of 3.3 m/spl Omega/cm/sup 2/, which is 20 times lower than that or silicon MOSFETs, thanks to the high critical field of GaN material and the high mobility in 2DEG channel. The fabricated devices also demonstrated the high current density switching of 850 A/cm/sup 2/ turn-off. These results show that AlGaN-GaN power-HEMTs are one of the most promising candidates for future switching power device for power electronics applications.read more
Citations
More filters
Journal ArticleDOI
Electron transport in passivated AlGaN/GaN/Si HEMTs
M. Gassoumi,Hana Mosbahi,Ali Soltani,Vanessa Sbrugnera-Avramovic,M. A. Zaidi,Christophe Gaquiere,Houcine Mejri,Hassen Maaref +7 more
TL;DR: In this article, the maximum drain current achieved 881 mA/mm with an extrinsic current gain cutoff frequency of 37 GHz for a 0.25 µm gate length.
Journal ArticleDOI
Investigation of constant voltage off-state stress on Au-free AlGaN/GaN Schottky barrier diodes
Jie Hu,Steve Stoffels,Silvia Lenci,Tian-Li Wu,Nicolo Ronchi,Shuzhen You,Benoit Bakeroot,Benoit Bakeroot,Guido Groeseneken,Stefaan Decoutere +9 more
TL;DR: In this article, an in-depth analysis of electron-trapping in AlGaN/GaN Schottky barrier diodes under constant voltage (VAC = %100V) off-state stress conditions was performed.
Journal ArticleDOI
Breakdown voltage analysis of Al 0.25 Ga 0.75 N/GaN high electron mobility transistors with partial silicon doping in the AlGaN layer
TL;DR: In this article, a new electric field peak was introduced along the interface between the AlGaN and GaN buffer by the electric field modulation effect due to partial silicon positive charge, which made the surface electric field uniform.
Journal ArticleDOI
Full thermal characterization of AlGaN/GaN high electron mobility transistors on silicon, silicon carbide, and diamond substrates using a reverse modeling approach
A. El-Helou,Y. Cui,Marko J. Tadjer,Travis J. Anderson,D. Francis,Tatyana Feygelson,Bradford B. Pate,Karl D. Hobart,Peter E. Raad +8 more
Journal ArticleDOI
Influence of Graded AlGaN sub-channel over the DC and Breakdown characteristics of a T-gated AlGaN/GaN/AlInN MOS-HEMT
V. Sandeep,J. Charles Pravin +1 more
TL;DR: In this article, the impact of graded Al0.05Ga0.95N sub-channel over the DC characteristics of AlGaN/GAN/AlInN Metal Oxide Semiconductor-High Electron Mobility Transistor (MOS-HEMT) has been investigated using Sentaurus Technology Computer-Aided Design (TCAD) simulation tool.
References
More filters
Journal ArticleDOI
Trends in power semiconductor devices
TL;DR: In this paper, the authors review recent trends in power semiconductor device technology that are leading to improvements in power losses for power electronic systems and predict that silicon carbide based switches will begin to displace these silicon devices.
Journal ArticleDOI
Wide bandgap compound semiconductors for superior high-voltage unipolar power devices
T.P. Chow,R. Tyagi +1 more
TL;DR: In this article, a critical evaluation of the performance capabilities of various wide bandgap semiconductors for high power and high frequency unipolar electronic devices is presented, and seven different figures of merit have been analyzed.
Proceedings ArticleDOI
A new generation of high voltage MOSFETs breaks the limit line of silicon
TL;DR: In this article, the authors proposed a new device concept for high voltage power devices based on charge compensation in the drift region of the transistor, which achieved a shrink factor of 5 versus the actual state of the art in power MOSFETs.
Journal ArticleDOI
10-W/mm AlGaN-GaN HFET with a field modulating plate
TL;DR: In this paper, a 1mm-wide field modulating plate (FP) was used to achieve a power density of 10.3 W with a linear gain of 18.0 dB and a power added efficiency of 47.3% at 2 GHz.
Journal ArticleDOI
High breakdown GaN HEMT with overlapping gate structure
TL;DR: In this paper, a GaN high electron mobility transistors (HEMTs) were fabricated using an overlapping-gate technique in which the drain-side edge of the metal gate overlaps on a high breakdown and high dielectric constant dielectrics.