Journal ArticleDOI
High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior
Wataru Saito,Yoshiharu Takada,Masahiko Kuraguchi,Kunio Tsuda,Ichiro Omura,T. Ogura,Hiromichi Ohashi +6 more
TLDR
AlGaN-GaN power high-electron mobility transistors (HEMTs) with 600-V breakdown voltage are fabricated and demonstrated as switching power devices for motor drive and power supply applications.Abstract:
AlGaN-GaN power high-electron mobility transistors (HEMTs) with 600-V breakdown voltage are fabricated and demonstrated as switching power devices for motor drive and power supply applications. The fabricated power HEMT realized the high breakdown voltage by optimized field plate technique and the low on-state resistance of 3.3 m/spl Omega/cm/sup 2/, which is 20 times lower than that or silicon MOSFETs, thanks to the high critical field of GaN material and the high mobility in 2DEG channel. The fabricated devices also demonstrated the high current density switching of 850 A/cm/sup 2/ turn-off. These results show that AlGaN-GaN power-HEMTs are one of the most promising candidates for future switching power device for power electronics applications.read more
Citations
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Journal ArticleDOI
Analysis of Reduction in Lag Phenomena and Current Collapse in Field-Plate AlGaN/GaN HEMTs With High Acceptor Density in a Buffer Layer
TL;DR: In this article, the authors make a 2D transient analysis of field-plate AlGaN/GaN HEMTs with a semi-insulating buffer layer, where only a deep acceptor above the midgap is considered.
Journal ArticleDOI
Vapor-phase epitaxy of high-crystallinity GaN films using Ga2O vapor and NH3
Mamoru Imade,Hiroki Kishimoto,Fumio Kawamura,Masashi Yoshimura,Yasuo Kitaoka,Takatomo Sasaki,Yusuke Mori +6 more
TL;DR: In this paper, Ga 2 O 3 powder was reduced with H 2 gas at 1000-°C and then reacted with NH 3 on a seed substrate at 1100-1150°C.
Journal ArticleDOI
Field-plate engineering for high breakdown voltage β-Ga2O3 nanolayer field-effect transistors
TL;DR: In this paper, a field modulating plate was introduced into a β-Ga2O3 nano-field effect transistor (nanoFET) to engineer the distribution of electric fields, wherein the offstate three-terminal breakdown voltage was reported to be 314 V.
Journal ArticleDOI
Single-Event Damage Observed in GaN-on-Si HEMTs for Power Control Applications
Eiichi Mizuta,Satoshi Kuboyama,Yuki Nakada,Akinori Takeyama,Takeshi Ohshima,Yoshiyuki Iwata,K. Suzuki +6 more
TL;DR: In this paper, the single-event damage observed in AlGaN/GaN high-electron mobility transistors (HEMTs) was investigated, and two types of catastrophic failure modes were observed with different leakage current paths; one failure mode was caused by the introduction of a leakage current path between the drain and Si substrate via the buffer layer.
Journal ArticleDOI
Realizing Negative Differential Resistance/Switching Phenomena in Zigzag GaN Nanoribbons by Edge Fluorination: A DFT Investigation
TL;DR: In this article, the structural stability, electronic and transport properties of zigzag edged GaN nanoribbons (ZGaNNRs), considering various edge passivations to gauge its potential for beyond silicon electronic devices.
References
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Journal ArticleDOI
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Proceedings ArticleDOI
A new generation of high voltage MOSFETs breaks the limit line of silicon
TL;DR: In this article, the authors proposed a new device concept for high voltage power devices based on charge compensation in the drift region of the transistor, which achieved a shrink factor of 5 versus the actual state of the art in power MOSFETs.
Journal ArticleDOI
10-W/mm AlGaN-GaN HFET with a field modulating plate
TL;DR: In this paper, a 1mm-wide field modulating plate (FP) was used to achieve a power density of 10.3 W with a linear gain of 18.0 dB and a power added efficiency of 47.3% at 2 GHz.
Journal ArticleDOI
High breakdown GaN HEMT with overlapping gate structure
TL;DR: In this paper, a GaN high electron mobility transistors (HEMTs) were fabricated using an overlapping-gate technique in which the drain-side edge of the metal gate overlaps on a high breakdown and high dielectric constant dielectrics.