Journal ArticleDOI
High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior
Wataru Saito,Yoshiharu Takada,Masahiko Kuraguchi,Kunio Tsuda,Ichiro Omura,T. Ogura,Hiromichi Ohashi +6 more
TLDR
AlGaN-GaN power high-electron mobility transistors (HEMTs) with 600-V breakdown voltage are fabricated and demonstrated as switching power devices for motor drive and power supply applications.Abstract:
AlGaN-GaN power high-electron mobility transistors (HEMTs) with 600-V breakdown voltage are fabricated and demonstrated as switching power devices for motor drive and power supply applications. The fabricated power HEMT realized the high breakdown voltage by optimized field plate technique and the low on-state resistance of 3.3 m/spl Omega/cm/sup 2/, which is 20 times lower than that or silicon MOSFETs, thanks to the high critical field of GaN material and the high mobility in 2DEG channel. The fabricated devices also demonstrated the high current density switching of 850 A/cm/sup 2/ turn-off. These results show that AlGaN-GaN power-HEMTs are one of the most promising candidates for future switching power device for power electronics applications.read more
Citations
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Journal ArticleDOI
A new two-dimensional C-V model for prediction of maximum frequency of oscillation (fmax) of deep submicron AlGaN/GaN HEMT for microwave and millimeter wave applications
TL;DR: An analytical two-dimensional capacitance-voltage model for AlGaN/GaN high electron mobility transistor (HEMTs) is developed, which is valid from a linear to saturation region and shows an excellent agreement when compared with the experimental data.
Journal ArticleDOI
Study of high breakdown voltage GaN-based current-aperture vertical electron transistor with source-connected field-plates for power applications
Haiyong Wang,Wei Mao,Cong Guanyu,Xiaofei Wang,Du Ming,Xue-Feng Zheng,Chong Wang,Jincheng Zhang,Yue Hao +8 more
TL;DR: In this article, a GaN-based current-aperture vertical electron transistor with source-connected field-plates (SFP-CAVET) is proposed and investigated by means of two-dimensional simulations.
Journal ArticleDOI
Effect of thermal annealing on 120‐nm-T-shaped-Ti∕Pt∕Au-gate AlGaN∕GaN high electron mobility transistors
Yoshimi Yamashita,Akira Endoh,Keiji Ikeda,Kohki Hikosaka,Takashi Mimura,Masataka Higashiwaki,Toshiaki Matsui,Satoshi Hiyamizu +7 more
TL;DR: In this article, a 120nm-long-T-shaped-Ti∕Pt∕Au-gate AlGaN∕GaN high electron mobility transistors (HEMTs) were fabricated on sapphire substrates and annealed them thermally to improve their Schottky contacts.
Journal ArticleDOI
Study on Surface Modification of GaN by Atmospheric Microplasma
TL;DR: In this article, the surface of a GaN was treated by atmospheric pressure microplasma using Ar and N2 as process gases and powered by ac and pulsed-power supplies, and the surface was analyzed before and after the treatment using X-ray photoelectron spectroscopy analysis and atomic force microscopy.
References
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Journal ArticleDOI
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TL;DR: In this paper, the authors review recent trends in power semiconductor device technology that are leading to improvements in power losses for power electronic systems and predict that silicon carbide based switches will begin to displace these silicon devices.
Journal ArticleDOI
Wide bandgap compound semiconductors for superior high-voltage unipolar power devices
T.P. Chow,R. Tyagi +1 more
TL;DR: In this article, a critical evaluation of the performance capabilities of various wide bandgap semiconductors for high power and high frequency unipolar electronic devices is presented, and seven different figures of merit have been analyzed.
Proceedings ArticleDOI
A new generation of high voltage MOSFETs breaks the limit line of silicon
TL;DR: In this article, the authors proposed a new device concept for high voltage power devices based on charge compensation in the drift region of the transistor, which achieved a shrink factor of 5 versus the actual state of the art in power MOSFETs.
Journal ArticleDOI
10-W/mm AlGaN-GaN HFET with a field modulating plate
TL;DR: In this paper, a 1mm-wide field modulating plate (FP) was used to achieve a power density of 10.3 W with a linear gain of 18.0 dB and a power added efficiency of 47.3% at 2 GHz.
Journal ArticleDOI
High breakdown GaN HEMT with overlapping gate structure
TL;DR: In this paper, a GaN high electron mobility transistors (HEMTs) were fabricated using an overlapping-gate technique in which the drain-side edge of the metal gate overlaps on a high breakdown and high dielectric constant dielectrics.