Journal ArticleDOI
High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior
Wataru Saito,Yoshiharu Takada,Masahiko Kuraguchi,Kunio Tsuda,Ichiro Omura,T. Ogura,Hiromichi Ohashi +6 more
TLDR
AlGaN-GaN power high-electron mobility transistors (HEMTs) with 600-V breakdown voltage are fabricated and demonstrated as switching power devices for motor drive and power supply applications.Abstract:
AlGaN-GaN power high-electron mobility transistors (HEMTs) with 600-V breakdown voltage are fabricated and demonstrated as switching power devices for motor drive and power supply applications. The fabricated power HEMT realized the high breakdown voltage by optimized field plate technique and the low on-state resistance of 3.3 m/spl Omega/cm/sup 2/, which is 20 times lower than that or silicon MOSFETs, thanks to the high critical field of GaN material and the high mobility in 2DEG channel. The fabricated devices also demonstrated the high current density switching of 850 A/cm/sup 2/ turn-off. These results show that AlGaN-GaN power-HEMTs are one of the most promising candidates for future switching power device for power electronics applications.read more
Citations
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Journal ArticleDOI
High-Performance Normally Off p-GaN Gate HEMT With Composite AlN/Al 0.17 Ga 0.83 N/Al 0.3 Ga 0.7 N Barrier Layers Design
Hsien-Chin Chiu,Yi-Sheng Chang,Bo-Hong Li,Hsiang-Chun Wang,Hsuan-Ling Kao,Chih-Wei Hu,Rong Xuan +6 more
TL;DR: In this paper, a novel normally off p-gallium nitride (GaN) gate high electron-mobility transistor (HEMT) with composite AlN/Al017Ga083/Al03Ga07N barrier layers is proposed.
Journal ArticleDOI
Recessed-Gate Enhancement-Mode GaN MOSFETs With a Double-Insulator Gate Providing 10-MHz Switching Operation
Junichi Kashiwagi,Tetsuya Fujiwara,Minoru Akutsu,Norikazu Ito,Kentaro Chikamatsu,Ken Nakahara +5 more
TL;DR: In this article, a double-insulator GaN transistor with a recess structure was fabricated by etching the Al0.19Ga0.81N layers to expose their underlying AlN layers.
Journal ArticleDOI
Electrothermal analysis of AlGaN/GaN high electron mobility transistors
TL;DR: In this article, the authors investigated coupled electrical and thermal transport in AlGaN/GaN HEMTs using an ensemble Monte Carlo model and revealed a hot spot in the channel that is localized at low drain-source bias, but expands towards the drain at higher bias.
Journal ArticleDOI
Novel Drain-Connected Field Plate GaN HEMT Designs for Improved V BD – R ON Tradeoff and RF PA Performance
TL;DR: In this paper, the breakdown behavior of drain-connected field plate-based GaN HEMTs was investigated and the proposed vertical and dual-field-plate designs were proposed to alleviate the channel electric field by uniformly distributing it vertically into the buffer region.
Journal ArticleDOI
Chip-scale GaN integration
TL;DR: This review paper presents an overview of the monolithic and heterogeneous integration of GaN devices and components and various methods for the integration of electronic, optoelectronic, and optical components based on GaN are discussed.
References
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Proceedings ArticleDOI
A new generation of high voltage MOSFETs breaks the limit line of silicon
TL;DR: In this article, the authors proposed a new device concept for high voltage power devices based on charge compensation in the drift region of the transistor, which achieved a shrink factor of 5 versus the actual state of the art in power MOSFETs.
Journal ArticleDOI
10-W/mm AlGaN-GaN HFET with a field modulating plate
TL;DR: In this paper, a 1mm-wide field modulating plate (FP) was used to achieve a power density of 10.3 W with a linear gain of 18.0 dB and a power added efficiency of 47.3% at 2 GHz.
Journal ArticleDOI
High breakdown GaN HEMT with overlapping gate structure
TL;DR: In this paper, a GaN high electron mobility transistors (HEMTs) were fabricated using an overlapping-gate technique in which the drain-side edge of the metal gate overlaps on a high breakdown and high dielectric constant dielectrics.