Journal ArticleDOI
High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior
Wataru Saito,Yoshiharu Takada,Masahiko Kuraguchi,Kunio Tsuda,Ichiro Omura,T. Ogura,Hiromichi Ohashi +6 more
TLDR
AlGaN-GaN power high-electron mobility transistors (HEMTs) with 600-V breakdown voltage are fabricated and demonstrated as switching power devices for motor drive and power supply applications.Abstract:
AlGaN-GaN power high-electron mobility transistors (HEMTs) with 600-V breakdown voltage are fabricated and demonstrated as switching power devices for motor drive and power supply applications. The fabricated power HEMT realized the high breakdown voltage by optimized field plate technique and the low on-state resistance of 3.3 m/spl Omega/cm/sup 2/, which is 20 times lower than that or silicon MOSFETs, thanks to the high critical field of GaN material and the high mobility in 2DEG channel. The fabricated devices also demonstrated the high current density switching of 850 A/cm/sup 2/ turn-off. These results show that AlGaN-GaN power-HEMTs are one of the most promising candidates for future switching power device for power electronics applications.read more
Citations
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Journal ArticleDOI
An Ultrathin AlGaN Barrier Layer MIS-HEMT Structure for Enhancement-Mode Operation
TL;DR: In this paper, a GaN-based enhancement mode (E-Mode) metal-insulator-semiconductor (MIS) high electron mobility transistor (HEMT) with a 2 nm/5 nm/1.5 nm-thin GaN/AlGaN/alN barrier is presented.
Proceedings ArticleDOI
High-power AlGaN/GaN HFETs on Si substrates
TL;DR: In this article, GaN-based HFET devices on 4-inch Si substrates were fabricated, and the device characteristics were examined, and a tradeoff between the specific on-resistance (RonA) and the breakdown voltage (Vb) was improved using carbon doped buffer layers.
Proceedings ArticleDOI
Effects of an Fe-doped GaN Buffer in AlGaN/GaN Power HEMTs on Si Substrate
TL;DR: In this article, the effects of an intentionally doped GaN buffer on device characteristics were investigated for high power switching applications, and it was shown that the AlGaN/GaN HEMT with a Fe-doped GAs buffer on Si exhibited much more stable and higher BVs by successfully suppressing the premature failure caused by Si breakdown.
Journal ArticleDOI
Habit control during growth on GaN point seed crystals by Na-flux method
Masatomo Honjo,Masayuki Imanishi,Hiroki Imabayashi,Kosuke Nakamura,Kosuke Murakami,Daisuke Matsuo,Mihoko Maruyama,Mamoru Imade,Masashi Yoshimura,Yusuke Mori +9 more
TL;DR: In this paper, high temperature growth was found to change the growth habit from the truncated pyramidal shape to the pyramididal shape, and as a result, the number of dislocations in the c-growth sector tended to decrease with increasing growth temperature.
Journal ArticleDOI
Hydrogen-Terminated Diamond MOSFETs Using Ultrathin Glassy Ga<sub>2</sub>O<sub>3</sub> Dielectric Formed by Low-Temperature Liquid Metal Printing Method
TL;DR: In this article , the p-type surface conductivity of hydrogen-terminated diamond (H-diamond) provides a viable approach toward diamond-based widebandgap MOSFETs for high power and high frequency electronics.
References
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Journal ArticleDOI
Trends in power semiconductor devices
TL;DR: In this paper, the authors review recent trends in power semiconductor device technology that are leading to improvements in power losses for power electronic systems and predict that silicon carbide based switches will begin to displace these silicon devices.
Journal ArticleDOI
Wide bandgap compound semiconductors for superior high-voltage unipolar power devices
T.P. Chow,R. Tyagi +1 more
TL;DR: In this article, a critical evaluation of the performance capabilities of various wide bandgap semiconductors for high power and high frequency unipolar electronic devices is presented, and seven different figures of merit have been analyzed.
Proceedings ArticleDOI
A new generation of high voltage MOSFETs breaks the limit line of silicon
TL;DR: In this article, the authors proposed a new device concept for high voltage power devices based on charge compensation in the drift region of the transistor, which achieved a shrink factor of 5 versus the actual state of the art in power MOSFETs.
Journal ArticleDOI
10-W/mm AlGaN-GaN HFET with a field modulating plate
TL;DR: In this paper, a 1mm-wide field modulating plate (FP) was used to achieve a power density of 10.3 W with a linear gain of 18.0 dB and a power added efficiency of 47.3% at 2 GHz.
Journal ArticleDOI
High breakdown GaN HEMT with overlapping gate structure
TL;DR: In this paper, a GaN high electron mobility transistors (HEMTs) were fabricated using an overlapping-gate technique in which the drain-side edge of the metal gate overlaps on a high breakdown and high dielectric constant dielectrics.