Journal ArticleDOI
High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior
Wataru Saito,Yoshiharu Takada,Masahiko Kuraguchi,Kunio Tsuda,Ichiro Omura,T. Ogura,Hiromichi Ohashi +6 more
TLDR
AlGaN-GaN power high-electron mobility transistors (HEMTs) with 600-V breakdown voltage are fabricated and demonstrated as switching power devices for motor drive and power supply applications.Abstract:
AlGaN-GaN power high-electron mobility transistors (HEMTs) with 600-V breakdown voltage are fabricated and demonstrated as switching power devices for motor drive and power supply applications. The fabricated power HEMT realized the high breakdown voltage by optimized field plate technique and the low on-state resistance of 3.3 m/spl Omega/cm/sup 2/, which is 20 times lower than that or silicon MOSFETs, thanks to the high critical field of GaN material and the high mobility in 2DEG channel. The fabricated devices also demonstrated the high current density switching of 850 A/cm/sup 2/ turn-off. These results show that AlGaN-GaN power-HEMTs are one of the most promising candidates for future switching power device for power electronics applications.read more
Citations
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Proceedings ArticleDOI
A Drain-Extended AlGaN/GaN MISFET for unidirectional switch
TL;DR: In this article, a Drain-Extended AlGaN/GaN MISFET (DE-MISFET) was proposed to realize drain self-protection for high reliability and also it can be manufactured in conventional process, and the simulated results show that ON-state current accounting for drain-induced barrier lowering (DIBL) effect of short channel is around 20 kA/cm2, and blocking voltage at OFF-state is more than 70 V/m.
Journal ArticleDOI
An annealing method for switching AlGaN/GaN field effect transistors employing an excimer laser
TL;DR: In this paper, a post-annealing method employing excimer laser pulses is proposed to improve the transfer characteristics and the breakdown voltage of unpassivated AlGaN/GaN heterostructure field effect transistors (HFETs) for switching devices.
Journal ArticleDOI
A density functional theory study of Au-decorated gallium nitride nano-tubes as chemical sensors for the recognition of sulfonamide
Basem H. Elesawy,Ahmad El Askary,Nasser S. Awwad,Hala A. Ibrahium,Parvaneh Delir Kheirollahi Nezhad,Mohd. Shkir +5 more
TL;DR: In this article , the effect of Au-decoration was investigated on the capability of a gallium nitride nano-tube (GaNNT) in detecting sulfonamide (SA) via the density functional B3LYP.
Dissertation
Design and theoretical study of Wurtzite GaN HEMTs and APDs via electrothermal Monte Carlo simulation
Book ChapterDOI
Implications of Field Plate HEMT Towards Power Performance at Microwave X - Band
TL;DR: In this article , the authors investigated the impact of field plate architectures on the power performance of AlGaN/GaN HEMTs at the Microwave X-band.
References
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Journal ArticleDOI
Trends in power semiconductor devices
TL;DR: In this paper, the authors review recent trends in power semiconductor device technology that are leading to improvements in power losses for power electronic systems and predict that silicon carbide based switches will begin to displace these silicon devices.
Journal ArticleDOI
Wide bandgap compound semiconductors for superior high-voltage unipolar power devices
T.P. Chow,R. Tyagi +1 more
TL;DR: In this article, a critical evaluation of the performance capabilities of various wide bandgap semiconductors for high power and high frequency unipolar electronic devices is presented, and seven different figures of merit have been analyzed.
Proceedings ArticleDOI
A new generation of high voltage MOSFETs breaks the limit line of silicon
TL;DR: In this article, the authors proposed a new device concept for high voltage power devices based on charge compensation in the drift region of the transistor, which achieved a shrink factor of 5 versus the actual state of the art in power MOSFETs.
Journal ArticleDOI
10-W/mm AlGaN-GaN HFET with a field modulating plate
TL;DR: In this paper, a 1mm-wide field modulating plate (FP) was used to achieve a power density of 10.3 W with a linear gain of 18.0 dB and a power added efficiency of 47.3% at 2 GHz.
Journal ArticleDOI
High breakdown GaN HEMT with overlapping gate structure
TL;DR: In this paper, a GaN high electron mobility transistors (HEMTs) were fabricated using an overlapping-gate technique in which the drain-side edge of the metal gate overlaps on a high breakdown and high dielectric constant dielectrics.