Journal ArticleDOI
High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior
Wataru Saito,Yoshiharu Takada,Masahiko Kuraguchi,Kunio Tsuda,Ichiro Omura,T. Ogura,Hiromichi Ohashi +6 more
TLDR
AlGaN-GaN power high-electron mobility transistors (HEMTs) with 600-V breakdown voltage are fabricated and demonstrated as switching power devices for motor drive and power supply applications.Abstract:
AlGaN-GaN power high-electron mobility transistors (HEMTs) with 600-V breakdown voltage are fabricated and demonstrated as switching power devices for motor drive and power supply applications. The fabricated power HEMT realized the high breakdown voltage by optimized field plate technique and the low on-state resistance of 3.3 m/spl Omega/cm/sup 2/, which is 20 times lower than that or silicon MOSFETs, thanks to the high critical field of GaN material and the high mobility in 2DEG channel. The fabricated devices also demonstrated the high current density switching of 850 A/cm/sup 2/ turn-off. These results show that AlGaN-GaN power-HEMTs are one of the most promising candidates for future switching power device for power electronics applications.read more
Citations
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Patent
High electron mobility transistor structure
Chen-Ju Yu,Chih-Wen Hsiung,Fu-Wei Yao,Chun-Wei Hsu,King-Yuen Wong,Jiun-Lei Jerry Yu,Fu-Chih Yang +6 more
TL;DR: In this article, a high electron mobility transistor (HEMT) is proposed, which includes a silicon substrate, an unintentionally doped gallium nitride (UID GaN) layer over the silicon substrate and a donor-supply layer over a UID GaN layer.
Optimization of Dual Field Plate AlGaN/GaN HEMTs Using Artificial Neural Networks and Particle Swarm Optimization Algorithm
TL;DR: In this article , an artificial neural network (ANN) model was used to fit the relationship between the dual-FP structure parameters and the breakdown voltage, so that the breakdown performance could be predicted quickly and the average prediction error was only 3.06%.
Journal ArticleDOI
Exploring the self-limiting atomic layer etching of AlGaN: A study of O2-BCl3 and chlorinate-argon systems
TL;DR: In this paper , two self-limiting AlGaN ALE systems (O2-BCl3 and chlorinate-argon) are reported in detail, and the results of the two systems are analyzed and compared.
Journal ArticleDOI
Drain current enhancement induced by hole injection from gate of 600-V-class normally off gate injection transistor under high temperature conditions up to 200 °C
TL;DR: In this article, the drain current of a 600-V-class normally off GaN gate injection transistor (GIT) from 25 to 200 °C was analyzed, and it was revealed that drain current increases during high-temperature operation.
Proceedings ArticleDOI
Impact of donor-layer doping & thickness, gate-length and temperature on potential and electron concentration in AlGaN/GaN Double-Heterostructure and Single-Heterostructure HEMT
TL;DR: In this article, the impact of donor-layer doping and thickness, gate-length and temperature on channel potential and electron concentration of Al 0.25 Ga 0.2 5Ga 0.75 N double heterostructure (DH) HEMT was analyzed.
References
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Journal ArticleDOI
Trends in power semiconductor devices
TL;DR: In this paper, the authors review recent trends in power semiconductor device technology that are leading to improvements in power losses for power electronic systems and predict that silicon carbide based switches will begin to displace these silicon devices.
Journal ArticleDOI
Wide bandgap compound semiconductors for superior high-voltage unipolar power devices
T.P. Chow,R. Tyagi +1 more
TL;DR: In this article, a critical evaluation of the performance capabilities of various wide bandgap semiconductors for high power and high frequency unipolar electronic devices is presented, and seven different figures of merit have been analyzed.
Proceedings ArticleDOI
A new generation of high voltage MOSFETs breaks the limit line of silicon
TL;DR: In this article, the authors proposed a new device concept for high voltage power devices based on charge compensation in the drift region of the transistor, which achieved a shrink factor of 5 versus the actual state of the art in power MOSFETs.
Journal ArticleDOI
10-W/mm AlGaN-GaN HFET with a field modulating plate
TL;DR: In this paper, a 1mm-wide field modulating plate (FP) was used to achieve a power density of 10.3 W with a linear gain of 18.0 dB and a power added efficiency of 47.3% at 2 GHz.
Journal ArticleDOI
High breakdown GaN HEMT with overlapping gate structure
TL;DR: In this paper, a GaN high electron mobility transistors (HEMTs) were fabricated using an overlapping-gate technique in which the drain-side edge of the metal gate overlaps on a high breakdown and high dielectric constant dielectrics.