Journal ArticleDOI
High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior
Wataru Saito,Yoshiharu Takada,Masahiko Kuraguchi,Kunio Tsuda,Ichiro Omura,T. Ogura,Hiromichi Ohashi +6 more
TLDR
AlGaN-GaN power high-electron mobility transistors (HEMTs) with 600-V breakdown voltage are fabricated and demonstrated as switching power devices for motor drive and power supply applications.Abstract:
AlGaN-GaN power high-electron mobility transistors (HEMTs) with 600-V breakdown voltage are fabricated and demonstrated as switching power devices for motor drive and power supply applications. The fabricated power HEMT realized the high breakdown voltage by optimized field plate technique and the low on-state resistance of 3.3 m/spl Omega/cm/sup 2/, which is 20 times lower than that or silicon MOSFETs, thanks to the high critical field of GaN material and the high mobility in 2DEG channel. The fabricated devices also demonstrated the high current density switching of 850 A/cm/sup 2/ turn-off. These results show that AlGaN-GaN power-HEMTs are one of the most promising candidates for future switching power device for power electronics applications.read more
Citations
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Journal ArticleDOI
Microstructural characteristics of GaN/AlN thin films grown on a Si (110) substrate by molecular beam epitaxy: Transmission electron microscopy study
TL;DR: In this article, Gajeong-Ro, Yuseong-Gu, Daejeon 34113, Republic of Korea 2 IV Works Co., Ansan, Kyungki-do 425-833.
Journal ArticleDOI
Suppression of Kink in the Output Characteristics of AlInN/GaN High Electron Mobility Transistors by Post-Gate Metallization Annealing
TL;DR: In this article , the effect of post-gate metallization annealing on the performance of GaN-based High Electron Mobility Transistors (HEMTs) was compared.
Journal ArticleDOI
Research on Single Event Burnout of GaN power devices with femtosecond pulsed laser
TL;DR: In this paper , a femtosecond pulsed laser is used to study the quantitative evaluation technology of the single event burnout (SEB) effect in GaN power devices, and two pulsed-laser effective energy transmission models for different device structures, analyzing and verifying the equivalent relationship between the effective laser energy and the heavy ion linear energy transmission (LET).
Journal ArticleDOI
Promotion of GaN Crystal Growth with Pre-stirring Using the Na-Flux Method
Journal ArticleDOI
Studies on the coupling correlation and strain state of AlGaN/GaN double channel heterostructures grown by metal organic chemical vapor deposition
Yachao Zhang,Baiqi Wang,Jinbang Ma,Yixin Yao,Kai Chen,Xing Wu Wang,Shengrui Xu,Jincheng Zhang,Yue Hao +8 more
TL;DR: In this paper , the coupling correlation between the two channels, as well as the strain state of this multilayer structure are investigated in detail, and it is revealed that the stronger coupling correlation affect the 2DEG distribution and leads to the lower channel is similar to the upper channel with the thinner thickness of the upper channels.
References
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TL;DR: In this paper, the authors review recent trends in power semiconductor device technology that are leading to improvements in power losses for power electronic systems and predict that silicon carbide based switches will begin to displace these silicon devices.
Journal ArticleDOI
Wide bandgap compound semiconductors for superior high-voltage unipolar power devices
T.P. Chow,R. Tyagi +1 more
TL;DR: In this article, a critical evaluation of the performance capabilities of various wide bandgap semiconductors for high power and high frequency unipolar electronic devices is presented, and seven different figures of merit have been analyzed.
Proceedings ArticleDOI
A new generation of high voltage MOSFETs breaks the limit line of silicon
TL;DR: In this article, the authors proposed a new device concept for high voltage power devices based on charge compensation in the drift region of the transistor, which achieved a shrink factor of 5 versus the actual state of the art in power MOSFETs.
Journal ArticleDOI
10-W/mm AlGaN-GaN HFET with a field modulating plate
TL;DR: In this paper, a 1mm-wide field modulating plate (FP) was used to achieve a power density of 10.3 W with a linear gain of 18.0 dB and a power added efficiency of 47.3% at 2 GHz.
Journal ArticleDOI
High breakdown GaN HEMT with overlapping gate structure
TL;DR: In this paper, a GaN high electron mobility transistors (HEMTs) were fabricated using an overlapping-gate technique in which the drain-side edge of the metal gate overlaps on a high breakdown and high dielectric constant dielectrics.