Journal ArticleDOI
High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior
Wataru Saito,Yoshiharu Takada,Masahiko Kuraguchi,Kunio Tsuda,Ichiro Omura,T. Ogura,Hiromichi Ohashi +6 more
TLDR
AlGaN-GaN power high-electron mobility transistors (HEMTs) with 600-V breakdown voltage are fabricated and demonstrated as switching power devices for motor drive and power supply applications.Abstract:
AlGaN-GaN power high-electron mobility transistors (HEMTs) with 600-V breakdown voltage are fabricated and demonstrated as switching power devices for motor drive and power supply applications. The fabricated power HEMT realized the high breakdown voltage by optimized field plate technique and the low on-state resistance of 3.3 m/spl Omega/cm/sup 2/, which is 20 times lower than that or silicon MOSFETs, thanks to the high critical field of GaN material and the high mobility in 2DEG channel. The fabricated devices also demonstrated the high current density switching of 850 A/cm/sup 2/ turn-off. These results show that AlGaN-GaN power-HEMTs are one of the most promising candidates for future switching power device for power electronics applications.read more
Citations
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Patent
Gallium nitride material devices and associated methods
TL;DR: The gallium nitride transistors can be used in RF power applications, amongst others as mentioned in this paper, which can lead to a number of advantages including reduced gate-drain feedback capacitance, reduced surface electron concentration, increased breakdown voltage, and improved device reliability.
Patent
Enhancement mode GaN HEMT device
TL;DR: An enhancement-mode GaN transistor as mentioned in this paper includes a substrate, transition layers, a buffer layer, a barrier layer comprised of a III Nitride material, drain and source contacts, a gate III-V compound containing acceptor type dopant elements, and a gate metal.
Journal ArticleDOI
Schottky barrier diode embedded AlGaN/GaN switching transistor
TL;DR: In this paper, a Schottky barrier diode (SBD) was embedded in a recessed normally off AlGaN/GaN-on-Si metal-oxide-semiconductor heterostructure field effect transistor (MOSHFET).
Journal ArticleDOI
Characterization of Recessed-Gate AlGaN/GaN HEMTs as a Function of Etch Depth
Travis J. Anderson,Marko J. Tadjer,Michael A. Mastro,Jennifer K. Hite,Karl D. Hobart,C. R. Eddy,Fritz J. Kub +6 more
TL;DR: In this paper, a set of high-electron-mobility transistors were fabricated using a Cl2-based plasma etch to study device performance as a function of recess depth, and the threshold voltage approached zero as the recess approached the AlGaN/GaN heterojunction.
Journal ArticleDOI
High-Responsivity Graphene/4H-SiC Ultraviolet Photodetector Based on a Planar Junction Formed by the Dual Modulation of Electric and Light Fields
Yimeng Li,Peng Chen,Xiufang Chen,Ru Xu,Menghan Liu,Jing Zhou,Cheng Ge,Haocheng Peng,Xiaokang Mao,Feng Jianbo,Xiaobo Hu,Yan Peng,Xiangang Xu,Zili Xie,Xiangqian Xiu,Dunjun Chen,Bin Liu,Ping Han,Yi Shi,Rong Zhang,Youdou Zheng +20 more
References
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Journal ArticleDOI
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Proceedings ArticleDOI
A new generation of high voltage MOSFETs breaks the limit line of silicon
TL;DR: In this article, the authors proposed a new device concept for high voltage power devices based on charge compensation in the drift region of the transistor, which achieved a shrink factor of 5 versus the actual state of the art in power MOSFETs.
Journal ArticleDOI
10-W/mm AlGaN-GaN HFET with a field modulating plate
TL;DR: In this paper, a 1mm-wide field modulating plate (FP) was used to achieve a power density of 10.3 W with a linear gain of 18.0 dB and a power added efficiency of 47.3% at 2 GHz.
Journal ArticleDOI
High breakdown GaN HEMT with overlapping gate structure
TL;DR: In this paper, a GaN high electron mobility transistors (HEMTs) were fabricated using an overlapping-gate technique in which the drain-side edge of the metal gate overlaps on a high breakdown and high dielectric constant dielectrics.