Journal ArticleDOI
High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior
Wataru Saito,Yoshiharu Takada,Masahiko Kuraguchi,Kunio Tsuda,Ichiro Omura,T. Ogura,Hiromichi Ohashi +6 more
TLDR
AlGaN-GaN power high-electron mobility transistors (HEMTs) with 600-V breakdown voltage are fabricated and demonstrated as switching power devices for motor drive and power supply applications.Abstract:
AlGaN-GaN power high-electron mobility transistors (HEMTs) with 600-V breakdown voltage are fabricated and demonstrated as switching power devices for motor drive and power supply applications. The fabricated power HEMT realized the high breakdown voltage by optimized field plate technique and the low on-state resistance of 3.3 m/spl Omega/cm/sup 2/, which is 20 times lower than that or silicon MOSFETs, thanks to the high critical field of GaN material and the high mobility in 2DEG channel. The fabricated devices also demonstrated the high current density switching of 850 A/cm/sup 2/ turn-off. These results show that AlGaN-GaN power-HEMTs are one of the most promising candidates for future switching power device for power electronics applications.read more
Citations
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Journal ArticleDOI
A New Post Annealing Method for AlGaN/GaN Heterostructure Field-Effect Transistors Employing XeCl Excimer Laser Pulses
TL;DR: In this paper, a post annealing method employing excimer laser pulses is proposed to improve the transfer characteristics and the breakdown voltage of the unpassivated AlGaN/GaN heterostructure field effect transistor (HFET) and the passivated one.
Journal ArticleDOI
An Improved P-Type Doped Barrier Surface AlGaN/GaN High Electron Mobility Transistor with High Power-Added Efficiency
TL;DR: An improved P-type doped barrier surface AlGaN/GaN high electron mobility transistor with high power-added efficiency (PDBS-HEMT) is proposed in this paper.
Suppression of Kink in the Output Characteristics of AlInN/GaN High Electron Mobility Transistors by Post-Gate Metallization Annealing
TL;DR: In this paper , the effect of post-gate metallization annealing on the performance of GaN-based High Electron Mobility Transistors (HEMTs) was compared.
Journal ArticleDOI
Design and Simulation of Normally Off High‐Electron‐Mobility Light‐Emitting Transistor
Aya Hekmet Makki,Si-Hyun Park +1 more
TL;DR: In this article , a built-in normally off GaN-based high-electronmobility light-emitting transistor is designed and simulated using 2D computer aided design software (Silvaco's TCAD).
Journal ArticleDOI
Fabrication and characteristics of flexible normally-off AlGaN/GaN HEMTs
Runze Lin,De-Sheng Zhao,De-Sheng Zhao,Guohao Yu,Xiaoyan Liu,Dongdong Wu,Erdan Gu,Xugao Cui,Ran Liu,Baoshun Zhang,Pengfei Tian +10 more
TL;DR: In this paper, a high electron mobility transistor (HEMT) silicon substrate was removed using mechanical grinding and deep silicon etching technology and successfully transferred to a PET substrate to achieve the flexible normally off HEMT.
References
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Journal ArticleDOI
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Proceedings ArticleDOI
A new generation of high voltage MOSFETs breaks the limit line of silicon
TL;DR: In this article, the authors proposed a new device concept for high voltage power devices based on charge compensation in the drift region of the transistor, which achieved a shrink factor of 5 versus the actual state of the art in power MOSFETs.
Journal ArticleDOI
10-W/mm AlGaN-GaN HFET with a field modulating plate
TL;DR: In this paper, a 1mm-wide field modulating plate (FP) was used to achieve a power density of 10.3 W with a linear gain of 18.0 dB and a power added efficiency of 47.3% at 2 GHz.
Journal ArticleDOI
High breakdown GaN HEMT with overlapping gate structure
TL;DR: In this paper, a GaN high electron mobility transistors (HEMTs) were fabricated using an overlapping-gate technique in which the drain-side edge of the metal gate overlaps on a high breakdown and high dielectric constant dielectrics.