Journal ArticleDOI
High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior
Wataru Saito,Yoshiharu Takada,Masahiko Kuraguchi,Kunio Tsuda,Ichiro Omura,T. Ogura,Hiromichi Ohashi +6 more
TLDR
AlGaN-GaN power high-electron mobility transistors (HEMTs) with 600-V breakdown voltage are fabricated and demonstrated as switching power devices for motor drive and power supply applications.Abstract:
AlGaN-GaN power high-electron mobility transistors (HEMTs) with 600-V breakdown voltage are fabricated and demonstrated as switching power devices for motor drive and power supply applications. The fabricated power HEMT realized the high breakdown voltage by optimized field plate technique and the low on-state resistance of 3.3 m/spl Omega/cm/sup 2/, which is 20 times lower than that or silicon MOSFETs, thanks to the high critical field of GaN material and the high mobility in 2DEG channel. The fabricated devices also demonstrated the high current density switching of 850 A/cm/sup 2/ turn-off. These results show that AlGaN-GaN power-HEMTs are one of the most promising candidates for future switching power device for power electronics applications.read more
Citations
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Journal ArticleDOI
YN nanostructure formation on the GaN(0 0 0 1) surface: First principles studies
TL;DR: In this article, the authors investigated the Y adsorption and YN thin film formation on the GaN(0, 0,0,1)-2,×-2 surfaces using first principles total energy calculations within the density functional theory.
Proceedings ArticleDOI
Growth of GaN single crystals by a Ca- and Ba-added Na flux method
H. Ukegawa,Yusuke Konishi,T. Fujimori,Naoya Miyoshi,Mamoru Imade,Masato Yoshimura,Yasuo Kitaoka,T. Sasaki,Y. Mori +8 more
TL;DR: In this article, the effects of additives (Ca, Ba) on the growth habit and impurity concentration in the GaN single crystals were investigated, showing that the growth habits could be changed from pyramidal shape to the prism shape.
Journal ArticleDOI
Comparative performance evaluation of lateral and vertical GaN high-voltage power field-effect transistors
TL;DR: In this paper, specific on-state resistance (R on,sp) and switching performance of various GaN power field-effect transistors (FETs) with 600 and 1200 V ratings were evaluated using analytical calculation and numerical simulation.
Journal ArticleDOI
Evaluation of titanium disilicide/copper Schottky gate for AlGaN/GaN high electron mobility transistors
TL;DR: In this paper, a gate leakage current of 5.15 × 10−7 mA mm−1 was found for a TiSi2/Cu gate device with a gate length of 5 μm and width of 200 μm.
Proceedings ArticleDOI
On the impact of buffer and GaN-channel thickness on current dispersion for GaN-on-Si RF/mmWave devices
Vamsi Putcha,L. Cheng,A. Alian,Ming Zhao,H. Lu,B. Parvais,Niamh Waldron,Dimitri Linten,Nadine Collaert +8 more
TL;DR: In this paper, an improved and more robust current transient spectroscopy technique is used to extract the time constant spectra and the activation energies of various buffer defects in GaN-on-Si devices.
References
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Proceedings ArticleDOI
A new generation of high voltage MOSFETs breaks the limit line of silicon
TL;DR: In this article, the authors proposed a new device concept for high voltage power devices based on charge compensation in the drift region of the transistor, which achieved a shrink factor of 5 versus the actual state of the art in power MOSFETs.
Journal ArticleDOI
10-W/mm AlGaN-GaN HFET with a field modulating plate
TL;DR: In this paper, a 1mm-wide field modulating plate (FP) was used to achieve a power density of 10.3 W with a linear gain of 18.0 dB and a power added efficiency of 47.3% at 2 GHz.
Journal ArticleDOI
High breakdown GaN HEMT with overlapping gate structure
TL;DR: In this paper, a GaN high electron mobility transistors (HEMTs) were fabricated using an overlapping-gate technique in which the drain-side edge of the metal gate overlaps on a high breakdown and high dielectric constant dielectrics.