Varian Associates

About: Varian Associates is a based out in . It is known for research contribution in the topics: Beam (structure) & Wafer. The organization has 2160 authors who have published 2591 publications receiving 46002 citations.

Electron channeling radiation from diamond.

Abstract: A series of channeling-radiation experiments for incident electrons of 16.9, 30.5, and 54.5 MeV has been performed, using a type-IIa natural diamond 23 \ensuremath{\mu}m thick. Channeling-radiation transition energies calculated with the standard (Hartree-Fock) potential are in good agreement with the observed results for the (100) and (110) planes as well as for the 〈100〉 axis at all energies, but are in error for the (111) plane. Corrections to the (111) potential due to anisotropic electron distributions which are based upon x-ray-diffraction data result in calculated transition energies that are in better agreement with the observed data; an empirical (111) potential yields calculated transition energies which are in even better agreement with the data. Calculated linewidths are considerably narrower than the observed values; this disagreement probably results from incoherent scattering by crystal defects having an average spacing of approximately 1 \ensuremath{\mu}m. The transition energies are shown to scale as ${\ensuremath{\gamma}}^{5/3}$ for transitions involving states that are localized close to the atomic planes and as ${\ensuremath{\gamma}}^{2}$ for those localized close to the midplane regions. Free-state populations are shown to increase relative to bound-state populations with incident electron-beam energy. Channeling radiation has been shown to constitute a practical source of x-ray photons utilizable at many existing accelerators.

Apparatus for manufacturing planarized aluminum films

Abstract: An apparatus for planarizing an aluminum layer on a semiconductor wafer includes two deposition sources. The first source applies a refractory metal silicide layer to form a barrier to oxygen. The wafer is moved to a second deposition source which is an aluminum sputter device including a heater for the wafer, R.F. bias on the wafer and a magnetic mirror behind the wafer to move the plasma away from the wafer.