Varian Associates

About: Varian Associates is a based out in . It is known for research contribution in the topics: Beam (structure) & Wafer. The organization has 2160 authors who have published 2591 publications receiving 46002 citations.

Nonlinear space-charge domain dynamics in a semiconductor with negative differential mobility

Abstract: On a semiphenomenological level, the explanation of the Gunn effect is one in terms of a time-independent, negative differential, bulk conductivity. This mechanism is based on the conduction-band structure of GaAs, which provides for two kinds of electrons, light and heavy ones. Light electrons dominate at low fields, heavy ones at high fields. Since the mobility of the heavy electrons is much lower than that of the light ones, there is a range of current decrease with increasing field, i.e., a negative conductivity. This negative conductivity leads to an electrical breakup of the crystal into alternating traveling domains of high and low fields, accompanied by alternating current. In a "mathematically perfect" crystal this instability would take the form of traveling negatively charged electron accumulation layers, separating the domains of high and low fields. In real crystals the inevitable spatial fluctuations in the impurity distribution lead to the experimentally observed dipole mode, wherein both negatively charged electron accumulation layers and positively charged electron depletion layers occur.

Quantitative interpretation of transient electromagnetic fields over a layered half space

Abstract: The transient fields from a finite horizontal loop excited by a half sine wave current pulse have been computed numerically for a particular source receiver configuration at a height of 100 meters above a layered ground. The amplitude of the vertical component of the magnetic field has been chosen for the interpretation. Curves of apparent conductivity vs. time, plotted during the off-time of the signal, show that layering is easily resolved, that resonance effects are present and that polarization effects are detectable for certain types of polarization.

Growth and properties of LPCVD titanium nitride as a diffusion barrier for silicon device technology

Abstract: Chemical vapor deposition has been used to deposit titanium nitride (TiN) on silicon wafers at low pressures in a cold-wall single-wafer reactor. Experiments are reported for pressures in the range of 100-300 mtorr and temperatures between 450{degrees}-700{degrees}C, with titanium tetrachloride and ammonia as reactants. Both hydrogen and nitrogen are evaluated as diluents. Deposition rates as high as 1000 {angstrom}/min have been achieved. The chemical nature of the films are evaluated by Auger and RBS techniques, while the morphology is depicted by SEM. For the most part, the films are stoichiometric and contain small quantities of oxygen, chlorine, and hydrogen.