Varian Associates

About: Varian Associates is a based out in . It is known for research contribution in the topics: Beam (structure) & Wafer. The organization has 2160 authors who have published 2591 publications receiving 46002 citations.

Use of titanium hydride in integrated circuit fabrication

Abstract: A process for forming titanium silicide layers on semiconductor device silicon regions which have native oxide thereon utilizes a reactively sputter deposited layer of TiHx≤2 followed by a rapid thermal anneal in a nitrogen bearing gas. The same process produces a titanium nitride/titanium silicide bilayer on silicon, and a titanium nitride/titanium bilayer on silicon dioxide.

Transfer and temperature monitoring apparatus

Abstract: The temperature of a substrate being coated by molecular beam epitaxial techniques is monitored during the deposition process. The substrate is mounted on a holder that is brought by a carriage to a treating station where the deposition occurs. At the station, a pair of metal contact pins selectively contact a surface of the holder. One of the contact pins and the surface, when contacting, form a first thermocouple junction; a second thermocouple junction is formed by the second contact pin and surface. The thermocouple junctions have dissimilar properties so that a voltage indicative of the temperature of the object is derived between them while the pins and surface contact each other. The holder is transferred between the treating station and carriage by translational and rotational motion of the holder and the carriage. While the translational and rotational motions occur, contact between the surface of the holder and the pins is prevented.

Design and Performance of an Atomic Hydrogen Maser

Abstract: The design and construction of a relatively compact device for use as a frequency standard is discussed. Hydrogen scavenging is done by titanium sorption pumps having a continuous operating lifetime of one year. The magnetic and thermal shielding of the cavity is described, and frequency errors due to various effects are discussed. Preliminary data of measurements of relative stability between two masers is presented and a means for measuring short- and long-term stability is discussed.

Collector for thermionic energy converter

Abstract: An improved collector is provided for a thermionic energy converter. The collector comprises a p-type layer of a semiconductor material formed on an n-type layer of a semiconductor material. The p-n junction is maintained in a forward biased condition. The electron affinity of the exposed surface of the p-type layer is effectively lowered to a low level near zero by the presence of a work function lowering activator. The dissipation of energy during collection is reduced by the passage of electrons through the p-type layer in the metastable conduction band state. A significant portion of the electron current remains at the potential of the Fermi level of the n-type layer rather than dropping to the Fermi level of the p-type layer. Less energy is therefore dissipated as heat and a higher net power output is delivered from a thermionic energy converter incorporating the collector.