Journal ArticleDOI
Leakage current mechanisms and leakage reduction techniques in deep-submicrometer CMOS circuits
Kaushik Roy,Saibal Mukhopadhyay,H. Mahmoodi-Meimand +2 more
- Vol. 91, Iss: 2, pp 305-327
TLDR
Channel engineering techniques including retrograde well and halo doping are explained as means to manage short-channel effects for continuous scaling of CMOS devices and different circuit techniques to reduce the leakage power consumption are explored.Abstract:
High leakage current in deep-submicrometer regimes is becoming a significant contributor to power dissipation of CMOS circuits as threshold voltage, channel length, and gate oxide thickness are reduced. Consequently, the identification and modeling of different leakage components is very important for estimation and reduction of leakage power, especially for low-power applications. This paper reviews various transistor intrinsic leakage mechanisms, including weak inversion, drain-induced barrier lowering, gate-induced drain leakage, and gate oxide tunneling. Channel engineering techniques including retrograde well and halo doping are explained as means to manage short-channel effects for continuous scaling of CMOS devices. Finally, the paper explores different circuit techniques to reduce the leakage power consumption.read more
Citations
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Proceedings ArticleDOI
Power-On Current Control In Sleep Transistor Implementations
D. Howard,Kaijian Shi +1 more
TL;DR: The trade-off consideration on power-on latency adds more challenges in the current control in sleep transistor implementations which is addressed in the paper.
Journal ArticleDOI
Enhanced multiferroic properties in epitaxial Yb-doped BiFeO 3 thin films
TL;DR: In this article, the multiferroic properties of a ytterbium-doped BiFeO3 thin film (Bi0.85Yb0.15Fe3) were investigated.
Journal ArticleDOI
Comparative Analysis of Low Power 10T and 14T Full Adder using Double Gate MOSFET at 45nm Technology
TL;DR: A comparative analysis of double gate 10T and double gate 14T adder at 45nm technology is described, which shows that 10T double gate full adder achieves 31.25% reduction in active power and 95% Reduction in leakage current as compared to 14T doubleGate Full adder.
Charge-Transfer CMOS Image Sensors: Device and Radiation Aspects
TL;DR: The aim of this thesis was investigating the effect of ionizing radiation on 4-T CMOS image sensors and the possibility of realizing a CCD like sensor in standard 0.18-?m CMOS technology (for medical applications).
Proceedings ArticleDOI
A stable and power efficient SRAM cell
Rohit,Gaurav Saini +1 more
TL;DR: The proposed 9T SRAM Cell gives improved SNM and reduced leakage power at the cost of small area overhead and was implemented using cadence Virtuoso tools in 180-nm technology.
References
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Journal ArticleDOI
Design of ion-implanted MOSFET's with very small physical dimensions
TL;DR: This paper considers the design, fabrication, and characterization of very small Mosfet switching devices suitable for digital integrated circuits, using dimensions of the order of 1 /spl mu/.
Book
Fundamentals of Modern VLSI Devices
Yuan Taur,Tak H. Ning +1 more
TL;DR: In this article, the authors highlight the intricate interdependencies and subtle tradeoffs between various practically important device parameters, and also provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices.
Book
Physics and technology of semiconductor devices
TL;DR: The Planar Technology of Semiconductor Surfaces is described in this article, where it is shown that the planar planar technology can be used to model the surface effects on p-n junction transistors.
Book
Digital Integrated Circuits
TL;DR: Digital Integrated Circuits as discussed by the authors is a practical book that bridges the gap between the circuit perspective and system perspective of digital integrated circuit design, including the impact of interconnect, design for low power, issues in timing and clocking, design methodologies and the tremendous effect of design automation on the digital design perspective.