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Journal ArticleDOI

Leakage current mechanisms and leakage reduction techniques in deep-submicrometer CMOS circuits

Kaushik Roy, +2 more
- Vol. 91, Iss: 2, pp 305-327
TLDR
Channel engineering techniques including retrograde well and halo doping are explained as means to manage short-channel effects for continuous scaling of CMOS devices and different circuit techniques to reduce the leakage power consumption are explored.
Abstract
High leakage current in deep-submicrometer regimes is becoming a significant contributor to power dissipation of CMOS circuits as threshold voltage, channel length, and gate oxide thickness are reduced. Consequently, the identification and modeling of different leakage components is very important for estimation and reduction of leakage power, especially for low-power applications. This paper reviews various transistor intrinsic leakage mechanisms, including weak inversion, drain-induced barrier lowering, gate-induced drain leakage, and gate oxide tunneling. Channel engineering techniques including retrograde well and halo doping are explained as means to manage short-channel effects for continuous scaling of CMOS devices. Finally, the paper explores different circuit techniques to reduce the leakage power consumption.

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Citations
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Journal ArticleDOI

A 2.18-pJ/conversion, 1656- μ m² Temperature Sensor With a 0.61-pJ·K² FoM and 52-pW Stand-By Power

TL;DR: In this article, the authors describe a miniature, ultra low power, all-dynamic temperature sensor based on a duty-cycled resistive transducer bridge and a 9-bit asynchronous SAR ADC in 65-nm CMOS.
Journal ArticleDOI

ITAP: Idle-Time-Aware Power Management for GPU Execution Units

TL;DR: ITAP is proposed, a novel idle-time-aware power management technique, which aims to effectively reduce the static energy consumption of GPU execution units and is designed to be power-aggressive or performance-aggressive, not both at the same time.
Journal ArticleDOI

In-situ, In-Memory Stateful Vector Logic Operations based on Voltage Controlled Magnetic Anisotropy.

TL;DR: This work exploits the voltage asymmetry of the VCMA effect to construct stateful IMP (implication) gate and use the precessional switching dynamics of theVCMA devices to propose a massively parallel NOT operation.
Journal ArticleDOI

Statistical Leakage Estimation Based on Sequential Addition of Cell Leakage Currents

TL;DR: The virtual-cell approximation (VCA) is proposed, which sums cell leakage currents sequentially by approximating their sum as the leakage current of a single virtual cell while preserving the correlations among leakage currents.
References
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Journal ArticleDOI

Design of ion-implanted MOSFET's with very small physical dimensions

TL;DR: This paper considers the design, fabrication, and characterization of very small Mosfet switching devices suitable for digital integrated circuits, using dimensions of the order of 1 /spl mu/.
Book

Fundamentals of Modern VLSI Devices

Yuan Taur, +1 more
TL;DR: In this article, the authors highlight the intricate interdependencies and subtle tradeoffs between various practically important device parameters, and also provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices.
Book

Physics and technology of semiconductor devices

TL;DR: The Planar Technology of Semiconductor Surfaces is described in this article, where it is shown that the planar planar technology can be used to model the surface effects on p-n junction transistors.
Book

Digital Integrated Circuits

TL;DR: Digital Integrated Circuits as discussed by the authors is a practical book that bridges the gap between the circuit perspective and system perspective of digital integrated circuit design, including the impact of interconnect, design for low power, issues in timing and clocking, design methodologies and the tremendous effect of design automation on the digital design perspective.
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