Institution
Westinghouse Electric
Company•Cranberry Township, Pennsylvania, United States•
About: Westinghouse Electric is a company organization based out in Cranberry Township, Pennsylvania, United States. It is known for research contribution in the topics: Brake & Signal. The organization has 27959 authors who have published 38036 publications receiving 523387 citations.
Topics: Brake, Signal, Circuit breaker, Turbine, Electromagnetic coil
Papers published on a yearly basis
Papers
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TL;DR: In this article, the Hall constant of two specimens of InSb in very strong magnetic fields was measured and it was found that the effect of the magnetic field on the electron mobility is larger than is expected on the basis of the usual theories of magnetoresistance.
73 citations
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73 citations
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TL;DR: In this paper, a solid-state event-logging system records the occurrence of specified events in a removable, solidstate, memory cartridge, where the clock is maintained in synchronization with the frequency of the line voltage by the microprocessor.
Abstract: A solid-state event-logging system records the occurrence of specified events in a removable, solid-state, memory cartridge. Counters continuously count pulses produced by a plurality of electrical energy measuring devices. Sample values of the continuous counts are produced and input to a microprocessor wherein each sample value has the previous sample value subtracted therefrom. The difference is added to an interval sum stored in a random access memory. The interval sums, together with real time information produced by a clock, are input to the memory cartridge according to a predetermined format. The clock is maintained in synchronization with the frequency of the line voltage by the microprocessor.
73 citations
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TL;DR: In this article, the spin-lattice relaxation time of two paramagnetic centers in quartz over a wide temperature range was analyzed in terms of cross relaxation, direct processes, and Raman processes.
Abstract: Measurements of the spin-lattice relaxation time ${T}_{1}$ by the inversion-recovery technique are reported for two paramagnetic centers in quartz over a wide temperature range: from 1.3 to 250\ifmmode^\circ\else\textdegree\fi{}K for the ${{E}_{1}}^{\ensuremath{'}}$ center, and from 2 to 80\ifmmode^\circ\else\textdegree\fi{}K the ${{E}_{2}}^{\ensuremath{'}}$ center. The data, extending over several orders of magnitude in ${T}_{1}$, are interpreted in terms of cross relaxation, direct processes, and Raman processes. The dominant feature of the Raman relaxation is a temperature variation of about ${T}^{3}$, which is much slower than expected by standard theory.The theory of spin-lattice relaxation is extended to account for the modification at a defect site of the strain due to a lattice wave. Each defect has at least one characteristic frequency and the local strain due to a wave of higher frequency is enhanced, being essentially given by the displacement due to the wave, rather than its spatial derivative. If the characteristic frequency is sufficiently low compared to the Debye frequency, the Raman relaxation rate should vary as ${T}^{3}$ (or ${T}^{5}$) over a wide range of temperatures, instead of the usual ${T}^{7}$ (or ${T}^{9}$) variation.A detailed comparison of the relaxation rates observed for the two ${E}^{\ensuremath{'}}$ centers with the above theory suggests that each center has two characteristic frequencies or temperatures ${\ensuremath{\theta}}_{i}$. For the ${{E}_{2}}^{\ensuremath{'}}$ center one of these (${\ensuremath{\theta}}_{i}=45\ifmmode^\circ\else\textdegree\fi{}$K) is ascribed to the vibration of a neighboring impurity ion, probably a proton. The other temperature (\ensuremath{\simeq}5\ifmmode^\circ\else\textdegree\fi{}K) may arise from the motion of oxygen ions at the defect. The ${{E}_{1}}^{\ensuremath{'}}$ center has the two characteristic temperatures of 140\ifmmode^\circ\else\textdegree\fi{}K and 14\ifmmode^\circ\else\textdegree\fi{}K.A model for the ${{E}_{1}}^{\ensuremath{'}}$ center is proposed: An electron is trapped at a silicon ion located in an oxygen divacancy. This model leads to the likelihood of low characteristic frequencies through a non-rigid Si${\mathrm{O}}_{2}$ group, and also through a net negative charge, which should attract one or more interstitial impurity ions.
73 citations
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TL;DR: In this paper, a glow discharge source for optical emission spectrography was used to perform sequential analysis of metal alloys in depths of 0.1 to 40 μm.
Abstract: Sequential analysis of metal alloys in depths of 0.1 to 40 μm are made with a glow discharge source for optical emission spectrography. The alloys examined have compositional variations in depth due to mass transfer in liquid sodium tests for materials studied in the fast breeder reactor program. The ion-sputtering action of the source produces progressive and discrete sampling of a defined area with concurrent excitation of the analytes in the negative glow region of the discharge. Integrated exposures of successive layers of attack are spectrographically recorded. The total weight loss is measured gravimetrically. Weight loss is assigned per exposure layer, and the depth of each attack is calculated. With more than 98% of the elemental composition measured, the sum of all elements is used as the internal standard. The precision approaches that of the photographic measurement process and does not indicate the ultimate precision of the source.
73 citations
Authors
Showing all 27975 results
Name | H-index | Papers | Citations |
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Takeo Kanade | 147 | 799 | 103237 |
Martin A. Green | 127 | 1069 | 76807 |
Shree K. Nayar | 113 | 384 | 45139 |
Dieter Bimberg | 97 | 1531 | 45944 |
Keith E. Gubbins | 85 | 466 | 35909 |
Peter K. Liaw | 84 | 1068 | 37916 |
Katsushi Ikeuchi | 78 | 636 | 20622 |
Mark R. Cutkosky | 77 | 393 | 20600 |
M. S. Skolnick | 73 | 728 | 22112 |
David D. Woods | 72 | 318 | 20825 |
Martin A. Uman | 67 | 338 | 16882 |
Michael Keidar | 67 | 566 | 14944 |
Terry C. Hazen | 66 | 354 | 17330 |
H. Harry Asada | 64 | 633 | 17358 |
Michael T. Meyer | 59 | 225 | 26947 |