Germanium Based Field-Effect Transistors: Challenges and Opportunities
Patrick S. Goley,Mantu K. Hudait +1 more
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This work reviews the two major remaining challenges that Ge based devices must overcome if they are to replace Si as the channel material, namely, heterogeneous integration of Ge on Si substrates, and developing a suitable gate stack.Abstract:
The performance of strained silicon (Si) as the channel material for today's metal-oxide-semiconductor field-effect transistors may be reaching a plateau. New channel materials with high carrier mobility are being investigated as alternatives and have the potential to unlock an era of ultra-low-power and high-speed microelectronic devices. Chief among these new materials is germanium (Ge). This work reviews the two major remaining challenges that Ge based devices must overcome if they are to replace Si as the channel material, namely, heterogeneous integration of Ge on Si substrates, and developing a suitable gate stack. Next, Ge is compared to compound III-V materials in terms of p-channel device performance to review how it became the first choice for PMOS devices. Different Ge device architectures, including surface channel and quantum well configurations, are reviewed. Finally, state-of-the-art Ge device results and future prospects are also discussed.read more
Citations
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Journal ArticleDOI
Monolithic Metal-Semiconductor-Metal Heterostructures Enabling Next-Generation Germanium Nanodevices.
Lukas Wind,Masiar Sistani,Zehao Song,Xavier Maeder,Darius Pohl,Johann Michler,Bernd Rellinghaus,Walter M. Weber,Alois Lugstein +8 more
TL;DR: In this article, a wafer-scale platform technology enabling monolithic AlGe-Al nanostructures fabricated by a thermally induced Al-Ge exchange reaction was presented. And the proposed fabrication scheme may give rise to the development of key components of a broad spectrum of emerging Ge-based devices requiring monolithic metal-semiconductor-metal heterstructures with high quality interfaces.
Journal ArticleDOI
Electrical properties of epitaxial Lu- or Y-doped La2O3/La2O3/Ge high-k gate-stacks
Takeshi Kanashima,R. Yamashiro,Masato Zenitaka,Keisuke Yamamoto,Dong Wang,J. Tadano,Shinya Yamada,Hiroshi Nohira,Hiroshi Nakashima,Kohei Hamaya +9 more
TL;DR: In this article, the electrical properties of epitaxial La2O3/germanium structures can be improved by using epitaxially grown Lutetium(Lu)- or Yttrium(Y)-doped La 2O3 passivation layers.
Journal ArticleDOI
Conductance of Threading Dislocations in InGaAs/Si Stacks by Temperature-CAFM Measurements
C. Couso,V. Iglesias,Marc Porti,S. Claramunt,Montserrat Nafria,Neus Domingo,A. Cordes,G. Bersuker +7 more
TL;DR: In this article, the characteristics of threading dislocations (TDs) were analyzed using conductive atomic force microscopy technique with nanoscale spatial resolution within a wide temperature range, showing that electrical conductance through the TD sites was governed by the Poole-Frenkel emission, while off-TDs conductivity is dominated by the thermionic emission process.
Journal ArticleDOI
Growth mechanisms and characteristics of Sm2O3 based on Ge semiconductor through oxidation and nitridation
TL;DR: In this paper, a systematic study of chemical, structural and electrical properties of Sm2O3 gate stack has been carried out for RF sputtered Sm thin film on Ge substrate followed by thermal oxidation and nitridation at different temperatures.
Journal ArticleDOI
Optimization of InAs/GaSb core-shell nanowire structure for improved TFET performance
Sankalp Kumar Singh,Ramesh Kumar Kakkerla,H. Bijo Joseph,Ankur Gupta,Deepak Anandan,Venkatesan Nagarajan,Hung Wei Yu,D. John Thiruvadigal,Edward Yi Chang +8 more
TL;DR: In this article, the performance of InAs/GaSb core-shell nanowire TFET was systematically investigated for the effects of intrinsic device parameters such as channel doping, shell thickness, spacer length and source offset.
References
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Book
Semiconductor Material and Device Characterization
TL;DR: In this article, the authors present a characterization of the resistivity of a two-point-versus-four-point probe in terms of the number of contacts and the amount of contacts in the probe.
Journal ArticleDOI
High-κ gate dielectrics: Current status and materials properties considerations
TL;DR: In this paper, a review of the literature in the area of alternate gate dielectrics is given, based on reported results and fundamental considerations, the pseudobinary materials systems offer large flexibility and show the most promise toward success.
Journal ArticleDOI
Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process
TL;DR: In this paper, the surface chemistry of the trimethylaluminum/water ALD process is reviewed, with an aim to combine the information obtained in different types of investigations, such as growth experiments on flat substrates and reaction chemistry investigation on high-surface-area materials.
Journal ArticleDOI
Band offsets of wide-band-gap oxides and implications for future electronic devices
TL;DR: In this paper, the Schottky barrier heights and band offsets for high dielectric constant oxides on Pt and Si were calculated and good agreement with experiment is found for barrier heights.
Journal ArticleDOI
Dislocation-free Stranski-Krastanow growth of Ge on Si(100).
D. J. Eaglesham,M. Cerullo +1 more
TL;DR: It is shown that the islands formed in Stranski-Krastanow (SK) growth of Ge on Si(100) are initially dislocation free, and the limiting critical thickness of coherent SK islands is shown to be higher than that for 2D growth.