Germanium Based Field-Effect Transistors: Challenges and Opportunities
Patrick S. Goley,Mantu K. Hudait +1 more
TLDR
This work reviews the two major remaining challenges that Ge based devices must overcome if they are to replace Si as the channel material, namely, heterogeneous integration of Ge on Si substrates, and developing a suitable gate stack.Abstract:
The performance of strained silicon (Si) as the channel material for today's metal-oxide-semiconductor field-effect transistors may be reaching a plateau. New channel materials with high carrier mobility are being investigated as alternatives and have the potential to unlock an era of ultra-low-power and high-speed microelectronic devices. Chief among these new materials is germanium (Ge). This work reviews the two major remaining challenges that Ge based devices must overcome if they are to replace Si as the channel material, namely, heterogeneous integration of Ge on Si substrates, and developing a suitable gate stack. Next, Ge is compared to compound III-V materials in terms of p-channel device performance to review how it became the first choice for PMOS devices. Different Ge device architectures, including surface channel and quantum well configurations, are reviewed. Finally, state-of-the-art Ge device results and future prospects are also discussed.read more
Citations
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Journal ArticleDOI
Control of Adhesion and Desorption Behavior of Silica Particles on Ingaas Surfaces by Addition of Hexadecyltrimethylammonium Bromide in Ammonium Hydroxide–Hydrogen Peroxide Mixture Solution
Journal ArticleDOI
Nanoscale n++-p junction formation in GeOI probed by tip-enhanced Raman spectroscopy and conductive atomic force microscopy
Slawomir Prucnal,Yonder Berencén,Mao Wang,Yordan M. Georgiev,Artur Erbe,Muhammad Bilal Khan,Roman Boettger,René Hübner,Tommy Schönherr,Jana Kalbacova,Lasse Vines,Stefan Facsko,Martin Engler,Dietrich R. T. Zahn,Joachim Knoch,Manfred Helm,Manfred Helm,Wolfgang Skorupa,Shengqiang Zhou +18 more
TL;DR: In this article, the authors used Raman spectroscopy, conductive atomic force microscopy, and secondary ion mass spectrometry to study the dopant distribution in n++-p junctions in GeOI.
Journal ArticleDOI
Effect of atomic-arrangement matching on La2O3/Ge heterostructures for epitaxial high-k-gate-stacks
TL;DR: In this article, a high-quality La2O3 layer on germanium (Ge) was demonstrated as an epitaxial high-k-gate-insulator, where there is an atomic-arrangement matching condition between La 2O3(001) and Ge(111).
Proceedings ArticleDOI
Effect of Germanium content on mobility enhancement for strained silicon FET
TL;DR: In this article, the authors report on mobility enhancement in the strained silicon (Si) based field effect transistor (FET) structure corresponds to variation of germanium (Ge) content.
Journal ArticleDOI
Boosting n-Type Doping Levels of Ge With Co-Doping by Integrating Plasma-Assisted Atomic Layer Deposition and Flash Annealing Process
Seunghun Baik,Hyeokjin Kwon,Chuck Paeng,He Zhang,Bodo Kalkofen,Jae Eun Jang,Y. S. Kim,Hyuk-Jun Kwon +7 more
TL;DR: In this paper, a flash lamp annealing process with a Xenon lamp (lamp duration: 3 ms; energy density: 56 J/cm2) was used to increase the surface temperature to nearly 800 °C.
References
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