Germanium Based Field-Effect Transistors: Challenges and Opportunities
Patrick S. Goley,Mantu K. Hudait +1 more
TLDR
This work reviews the two major remaining challenges that Ge based devices must overcome if they are to replace Si as the channel material, namely, heterogeneous integration of Ge on Si substrates, and developing a suitable gate stack.Abstract:
The performance of strained silicon (Si) as the channel material for today's metal-oxide-semiconductor field-effect transistors may be reaching a plateau. New channel materials with high carrier mobility are being investigated as alternatives and have the potential to unlock an era of ultra-low-power and high-speed microelectronic devices. Chief among these new materials is germanium (Ge). This work reviews the two major remaining challenges that Ge based devices must overcome if they are to replace Si as the channel material, namely, heterogeneous integration of Ge on Si substrates, and developing a suitable gate stack. Next, Ge is compared to compound III-V materials in terms of p-channel device performance to review how it became the first choice for PMOS devices. Different Ge device architectures, including surface channel and quantum well configurations, are reviewed. Finally, state-of-the-art Ge device results and future prospects are also discussed.read more
Citations
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Elemental behaviors of InGaAs surface after treatment in aqueous solutions
Jihoon Na,Sangwoo Lim +1 more
TL;DR: In this paper, the behavior of each element of the In053Ga047As surface in chemical solutions such as HCl, NH4OH, HPM, and APM was investigated from the viewpoint of thermodynamics and reaction kinetics.
Journal ArticleDOI
Nickel Germanide Thin Films by Atomic Layer Deposition
Katja Väyrynen,Anton Vihervaara,Timo Hatanpää,Miika Mattinen,Mikko Heikkilä,Kenichiro Mizohata,Jyrki Räisänen,Mikko Ritala,Markku Leskelä +8 more
TL;DR: In this paper, the preparation of nickel germanide (Ni2Ge) thin films by atomic layer deposition (ALD) was presented, and the films were grown using NiCl2(tmpda) (tmpda = N,N, N, N′,N′, n′,-tetramethyl-1,3propanediamine) a...
Journal ArticleDOI
Crystalline SrZrO3 deposition on Ge (001) by atomic layer deposition for high-k dielectric applications
Shen Hu,Li Ji,Pei-Yu Chen,Bryce I. Edmondson,Heng-Lu Chang,Agham Posadas,HsinWei Wu,Edward T. Yu,David J. Smith,Alexander A. Demkov,John G. Ekerdt +10 more
TL;DR: In this article, an amorphous 3-nm SZO layer was grown from strontium bis(triisopropylcyclopentadienyl), tetrakis (dimethylamido) zirconium, and water at 225°C.
Journal ArticleDOI
Wet Chemical Processing of Ge in Acidic H 2 O 2 Solution: Nanoscale Etching and Surface Chemistry
Graniel Harne A. Abrenica,Mathias Fingerle,Mikhail V. Lebedev,Sophia Arnauts,Thomas Mayer,Frank Holsteyns,Stefan De Gendt,Dennis H. van Dorp +7 more
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Monolayer Doping of Germanium with Arsenic: A New Chemical Route to Achieve Optimal Dopant Activation.
Noel Kennedy,Shane Garvey,Shane Garvey,Barbara Maccioni,Luke Eaton,Luke Eaton,Michael Nolan,Ray Duffy,Fintan Meaney,Mary A. Kennedy,Justin D. Holmes,Brenda Long +11 more
TL;DR: A new chemical route is reported for the wet chemical functionalization of germanium (Ge), whereby arsanilic acid is covalently bound to a chlorine (Cl) terminated surface, via monolayer doping (MLD), which offers a non destructive alternative to ion implantation.
References
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