Germanium Based Field-Effect Transistors: Challenges and Opportunities
Patrick S. Goley,Mantu K. Hudait +1 more
TLDR
This work reviews the two major remaining challenges that Ge based devices must overcome if they are to replace Si as the channel material, namely, heterogeneous integration of Ge on Si substrates, and developing a suitable gate stack.Abstract:
The performance of strained silicon (Si) as the channel material for today's metal-oxide-semiconductor field-effect transistors may be reaching a plateau. New channel materials with high carrier mobility are being investigated as alternatives and have the potential to unlock an era of ultra-low-power and high-speed microelectronic devices. Chief among these new materials is germanium (Ge). This work reviews the two major remaining challenges that Ge based devices must overcome if they are to replace Si as the channel material, namely, heterogeneous integration of Ge on Si substrates, and developing a suitable gate stack. Next, Ge is compared to compound III-V materials in terms of p-channel device performance to review how it became the first choice for PMOS devices. Different Ge device architectures, including surface channel and quantum well configurations, are reviewed. Finally, state-of-the-art Ge device results and future prospects are also discussed.read more
Citations
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High-K materials and metal gates for CMOS applications
John Robertson,Robert M. Wallace +1 more
TL;DR: In this article, a review of the high-K gate stack is presented, including the choice of oxides, their deposition, their structural and metallurgical behaviour, atomic diffusion, interface structure, their electronic structure, band offsets, electronic defects, charge trapping and conduction mechanisms, reliability, mobility degradation and oxygen scavenging.
Journal ArticleDOI
Synthesis and Characterization of Hexagonal Boron Nitride as a Gate Dielectric
TL;DR: An interesting coincidence of a critical thickness of 10 nm was identified in both the CVD growth behavior and in the breakdown electric field strength and leakage current mechanism, indicating that the electrical properties of the cVD h-BN film depended significantly on the film growth mode and the resultant film quality.
Journal ArticleDOI
Enabling Energy Efficiency and Polarity Control in Germanium Nanowire Transistors by Individually Gated Nanojunctions
Jens Trommer,Andre Heinzig,Uwe Mühle,Uwe Mühle,Markus Löffler,Annett Winzer,Paul M. Jordan,Jurgen Beister,Tim Baldauf,Marion Geidel,B. Adolphi,Ehrenfried Zschech,Thomas Mikolajick,Walter M. Weber +13 more
TL;DR: Finite-element drift-diffusion simulations reveal that both leakage current suppression and polarity control can also be achieved at highly scaled geometries, providing solutions for future energy-efficient systems.
Journal ArticleDOI
Ultra-doped n-type germanium thin films for sensing in the mid-infrared
Slawomir Prucnal,Fang Liu,Matthias Voelskow,Lasse Vines,Lars Rebohle,Denny Lang,Yonder Berencén,Stefan Andric,Roman Boettger,Manfred Helm,Manfred Helm,Shengqiang Zhou,Wolfgang Skorupa +12 more
TL;DR: Ion implantation followed by rear side flash-lamp annealing (r-FLA) is used for the fabrication of heavily doped n-type Ge with high mobility, which enables to exploit the plasmonic properties of Ge for sensing in the mid-infrared spectral range.
Journal ArticleDOI
Bending induced electrical response variations in ultra-thin flexible chips and device modeling
TL;DR: In this paper, the effects of bending on the response of devices on ultra-thin chips in terms of variations in electrical parameters such as mobility, threshold voltage, and device performance (static and dynamic).
References
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Ohmic contact formation on n-type Ge
TL;DR: In this article, a thin Ge3N4 layer is introduced to reduce Fermi level pinning and allow the formation of Ohmic contacts on moderately, n-type doped Ge layers.
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HfO2 high-κ gate dielectrics on Ge (100) by atomic oxygen beam deposition
A. Dimoulas,G. Mavrou,G. Vellianitis,Evangelos Evangelou,Nikos Boukos,Michel Houssa,Matty Caymax +6 more
TL;DR: In this paper, a very low equivalent oxide thickness of 0.75 (± 0.1) nm with a low gate leakage current of ∼4.5×10−4A∕cm2 at 1 V in accumulation is achieved.
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Effects of hydrogen annealing on heteroepitaxial-Ge layers on Si: Surface roughness and electrical quality
TL;DR: In this paper, the effect of hydrogen annealing on the surface roughness of germanium (Ge) layers grown by chemical vapor deposition on silicon using atomic force microscopy and cross-sectional high resolution scanning electron microscopy (HR-SEM).
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Alleviation of Fermi-level pinning effect on metal/germanium interface by insertion of an ultrathin aluminum oxide
TL;DR: In this paper, a thin layer of aluminum oxide (Al2O3), formed by oxidation of aluminum (Al), was inserted between the metal/Ge interface to alleviate the strong Fermi-level pinning effect.
Journal ArticleDOI
Effect of surface NH3 anneal on the physical and electrical properties of HfO2 films on Ge substrate
Nan Wu,Qingchun Zhang,Chunxiang Zhu,Chia Chin Yeo,S.J. Whang,D.S.H. Chan,M.F. Li,Byung Jin Cho,Albert Chin,Dim-Lee Kwong,Anyan Du,C.H. Tung,N. Balasubramanian +12 more
TL;DR: In this article, a surface annealing step in NH3 ambient before the HfO2 deposition could result in significant improvement in both gate leakage current and the equivalent oxide thickness (EOT).